The DOI matches its Crossref record; 6 of the 6 references it cites were found in a registry or an index.
A New Degradation Mechanism in High-Voltage SiC Power MOSFETs
Abstract
The phenomenon of recombination-induced stacking faults in high-voltage p-n diodes in SiC has been previously shown to increase the forward voltage drop due to reduction of minority carrier lifetime. In this paper, it has been shown that, for the first time, this effect is equally important in unipolar devices such as high-voltage MOSFETs. If the internal body diode is allowed to be forward biased during the operation of these devices, then the recombination-induced SFs will reduce the majority carrier conduction current and increase the leakage current in blocking mode. The effect is more noticeable in high-voltage devices where the drift layer is thick and is not expected to impact 600–1200-V devices.
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Citations
Cites
Degradation of hexagonal silicon-carbide-based bipolar devices
Skowronski, M., & Ha, S. (2006) · Journal of Applied Physics · doi:10.1063/1.2159578 · Cited by 474
Crystal Defects as Source of Anomalous Forward Voltage Increase of 4H-SiC Diodes
Bergman, P., Lendenmann, H., Nilsson, P. Å., Lindefelt, U., & Skytt, P. (2001) · Materials Science Forum · doi:10.4028/www.scientific.net/msf.353-356.299 · Cited by 401
Recombination-enhanced extension of stacking faults in 4H-SiC p-i-n diodes under forward bias
Galeckas, A., Linnros, J., & Pirouz, P. (2002) · Applied Physics Letters · doi:10.1063/1.1496498 · Cited by 207
Structure of recombination-induced stacking faults in high-voltage SiC p–n junctions
Liu, J. Q., Skowronski, M., Hallin, C., Söderholm, R., & Lendenmann, H. (2002) · Applied Physics Letters · doi:10.1063/1.1446212 · Cited by 189
Sumakeris, J. J., Bergman, P., Das, M. K., Hallin, C., Hull, B., Janzén, E., Lendenmann, H., O’Loughlin, M. J., Paisley, M. J., Ha, S. Y., et al. (2006) · Materials science forum · doi:10.4028/www.scientific.net/msf.527-529.141 · Cited by 91
Sumakeris, J. J., Bergman, J. P., Das, M. K., et al. (2006) · Materials science forum · doi:10.4028/0-87849-425-1.141 · Cited by 6
Cited by
Lelis, A. J., Green, R., Habersat, D. B., & El, M. (2015) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2014.2356172 · Cited by 477
Characterization, Modeling, and Application of 10-kV SiC MOSFET
Wang, J., Zhao, T., Li, J., Huang, A. Q., Callanan, R., Husna, F., & Agarwal, A. (2008) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2008.926650 · Cited by 398
Self-citationOverview of Real-Time Lifetime Prediction and Extension for SiC Power Converters
Ni, Z., Lyu, X., Yadav, O. P., Singh, B. N., Zheng, S., & Cao, D. (2020) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2019.2962503 · Cited by 261
15 kV SiC MOSFET: An Enabling Technology for Medium Voltage Solid State Transformers
FREEDM Systems Center, N. C. S. U., & Huang, A. Q. (2017) · CPSS Transactions on Power Electronics and Applications · doi:10.24295/cpsstpea.2017.00012 · Cited by 182
10 kV/120 A SiC DMOSFET half H-bridge power modules for 1 MVA solid state power substation
Grider, D., Das, M., Agarwal, A., Palmour, J., Leslie, S., Ostop, J., Raju, R., Schutten, M., & Hefner, A. (2011) · 2011 IEEE Electric Ship Technologies Symposium · doi:10.1109/ests.2011.5770855 · Cited by 115
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Metadata
- Authors
- Agarwal, A., Fatima, H., Haney, S., & Ryu, S.-H.
- Venue
- IEEE Electron Device Letters
- Published
- 2007-07
- Volume
- 28
- Issue
- 7
- Pages
- 587-589
- ISSN
- 0741-3106 (ISSN-L)
- OpenAlex
- W2117037876
- Cited by
- 300
- References
- 6
- FWCI
- 6.62
- Type
- journal article
- Language
- en
- Open access
- closed
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- Agarwal, A., Fatima, H., Haney, S., & Ryu, S.-H. (2007). A New Degradation Mechanism in High-Voltage SiC Power MOSFETs. IEEE Electron Device Letters. https://doi.org/10.1109/led.2007.897861
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Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.
