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Measurement of thermal conductivity of silicon dioxide thin films using a 3ω method
Abstract
The thermal conductivity of SiO2 thin films prepared using various procedures has been studied using a 3ω method. The thermal conductivity of SiO2 thin films of above approximately 500 nm thickness decreases as the porosity of the specimen, which is determined by infrared absorption spectroscopy, increases. Below approximately 250 nm thickness, the observed thermal conductivity of the SiO2 thin films systematically decreases as a function of film thickness. The data have been analyzed based on a SiO2-thickness-independent thermal conductivity and interfacial resistance. The total estimated interfacial resistance between the metal strip and the film, and between the film and the substrate is about 2×10−8 m2 KW−1.
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“For SiO 2 , this fit yields a thermal conductivity of 1.4 ± 0.2 W m À 1 K À 1 , which agrees with bulk values 24 and has a low mean square error (MSE ¼ 0.04).”
From Broadband phonon mean free path contributions to thermal conductivity measured using frequency domain thermoreflectance (2013) · cites this paper as [24]
In the citing paper
“This frequencyindependent data is consistent with measurements of SiO 2 thin films where there was no observed thermal conductivity reduction from bulk due to boundary scattering 24,31 .”
From Broadband phonon mean free path contributions to thermal conductivity measured using frequency domain thermoreflectance (2013) · cites this paper as [24]
Citations
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- 1984, Appl. Phys. A: Solids Surf., 38, 263
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Thermal conductivity of carbon nanotube networks: a review
Kumanek, B., & Janas, D. W. (2019) · Journal of Materials Science · doi:10.1007/s10853-019-03368-0 · Cited by 497
Ballistic to diffusive crossover of heat flow in graphene ribbons
Bae, M., Li, Z., Akšamija, Z., Martin, P., Xiong, F., Ong, Z., Knežević, I., & Pop, E. (2013) · Nature Communications · doi:10.1038/ncomms2755 · Cited by 326
Metadata
- Authors
- Yamane, T., Nagai, N., Katayama, S.-I., & Todoki, M.
- Affiliations
- Toray Research Center, Inc. (Japan) (JP)
- ORCID
- Nagai, Naoto
- Venue
- Journal of Applied Physics
- Publisher
- AIP Publishing
- Published
- 2002-06-15
- Volume
- 91
- Issue
- 12
- Pages
- 9772-9776
- ISSN
- 0021-8979 (ISSN-L)
- 1089-7550
- OpenAlex
- W2052807145
- Cited by
- 367
- References
- 16
- Citations by year
- 2026: 10 · 2025: 15 · 2024: 10 · 2023: 18 · 2022: 17 · 2021: 14 · 2020: 30 · 2019: 26 · 2018: 24 · 2017: 22 · 2016: 15 · 2015: 23 · 2014: 25 · 2013: 19 · 2012: 19
- FWCI
- 3.04
- Type
- journal article
- Language
- en
- Open access
- closed
- Locations
- Journal of Applied Physics (publishedVersion)
- Topics
- Physical Sciences › Materials Science › Materials Chemistry › Thermal properties of materials
- Physical Sciences › Engineering › Electrical and Electronic Engineering › 3D IC and TSV technologies
- Physical Sciences › Engineering › Mechanics of Materials › Thermography and Photoacoustic Techniques
- Keywords
- thermal conductivity, SiO2 thin films, 3ω method, porosity, film thickness dependence, interfacial thermal resistance, metal/film interface, film-substrate interface, infrared absorption spectroscopy
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