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Reproducible resistance switching in polycrystalline NiO films
Abstract
Negative resistance behavior and reproducible resistance switching were found in polycrystalline NiO films deposited by dc magnetron reactive sputtering methods. Oxygen to argon gas ratio during deposition was critical in deciding the detailed switching characteristics of either bi-stable memory switching or mono-stable threshold switching. Both metallic nickel defects and nickel vacancies influenced the negative resistance and the switching characteristics. We obtained a distribution of low resistance values which were dependent on the compliance current of high-to-low resistance switching. At 200°C, the low-resistance state kept its initial resistance value while the high-resistance state reached 85% of its initial resistance value after 5×105s. We suggested that the negative resistance and the switching mechanism could be described by electron conduction related to metallic nickel defect states existing in deep levels and by small-polaron hole hopping conduction.
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Metadata
- Authors
- Seo, S., Lee, M. J., Seo, D. H., Jeoung, E. J., Suh, D.-S., Joung, Y. S., Yoo, I. K., Hwang, I. R., Kim, S. H., Byun, I. S., Kim, J.-S., Choi, J. S., & Park, B. H.
- Venue
- Applied Physics Letters
- Publisher
- AIP Publishing
- Published
- 2004-12-06
- Volume
- 85
- Issue
- 23
- Pages
- 5655-5657
- ISSN
- 0003-6951 (ISSN-L)
- 1077-3118
- OpenAlex
- W2028461509
- Cited by
- 933
- References
- 10
- FWCI
- 25.83
- Type
- journal article
- Language
- en
- Open access
- closed
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- Seo, S., Lee, M. J., Seo, D. H., Jeoung, E. J., Suh, D.-S., Joung, Y. S., Yoo, I. K., Hwang, I. R., Kim, S. H., Byun, I. S., Kim, J.-S., Choi, J. S., & Park, B. H. (2004). Reproducible resistance switching in polycrystalline NiO films. Applied Physics Letters. https://doi.org/10.1063/1.1831560
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