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Cited by 350

The DOI matches its Crossref record; 2 of the 2 references it cites were found in a registry or an index.

Negative oxygen vacancies in HfO2 as charge traps in high-k stacks

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Gavartin, J. L., Muñoz Ramo, D., Shluger, A. L., Bersuker, G., Lee, B. H.·2006·Applied Physics Letters

Abstract

The optical excitation and thermal ionization energies of oxygen vacancies in m-HfO2 are calculated using a non-local density functional theory with atomic basis sets and periodic supercell. The thermal ionization energies of negatively charged V− and V2− centers are consistent with values obtained by the electrical measurements. The results suggest that negative oxygen vacancies are essentially polaronic in origin. They are likely candidates for intrinsic shallow electron traps in the hafnium based gate stack devices.

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Crossref · 10.1063/1.2236466

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Metadata

Authors
Gavartin, J. L., Muñoz Ramo, D., Shluger, A. L., Bersuker, G., & Lee, B. H.
Venue
Applied Physics Letters
Published
2006-08-21
Volume
89
Issue
8
ISSN
  • 0003-6951 (ISSN-L)
  • 1077-3118
OpenAlex
W2003124709
Cited by
350
References
2
FWCI
27.33
Type
journal article
Language
en
Open access
green

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CoChat. (2026). Citation check: Negative oxygen vacancies in HfO2 as charge traps in high-k stacks. https://app.cochat.ai/papers/10.1063/1.2236466
The paper
Gavartin, J. L., Muñoz Ramo, D., Shluger, A. L., Bersuker, G., & Lee, B. H. (2006). Negative oxygen vacancies in HfO2 as charge traps in high-k stacks. Applied Physics Letters. https://doi.org/10.1063/1.2236466

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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).

Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.