The DOI matches its Crossref record; 35 of the 35 references it cites were found in a registry or an index.
Complex Internal Bias Fields in Ferroelectric Hafnium Oxide
Abstract
For the rather new hafnia- and zirconia-based ferroelectrics, a lot of questions are still unsettled. Among them is the electric field cycling behavior consisting of (1) wake-up, (2) fatigue, and (3) the recently discovered subcycling-induced split-up/merging effect of transient current peaks in a hysteresis measurement. In the present work, first-order reversal curves (FORCs) are applied to study the evolution of the switching and backswitching field distribution within the frame of the Preisach model for three different phenomena: (1) The pristine film contains two oppositely biased regions. These internal bias fields vanish during the wake-up cycling. (2) Fatigue as a decrease in the number of switchable domains is accompanied by a slight increase in the mean absolute value of the switching field. (3) The split-up effect is shown to also be related to local bias fields in a complex situation resulting from both the field cycling treatment and the measurement procedure. Moreover, the role of the wake-up phenomenon is discussed with respect to optimizing low-voltage operation conditions of ferroelectric memories toward reasonably high and stable remanent polarization and highest possible endurance.
Overview
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Integrity signals
Registry
Cites
Statistics
Verification
Claims the paper makes
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Self-check
Percentages, sums and reported differences re-computed from the paper’s own numbers.
The self-check needs the paper’s full text.
Citations
Cites
Ferroelectricity in hafnium oxide thin films
Böscke, T. S., Müller, J., Bräuhaus, D., Schröder, U., & Böttger, U. (2011) · Applied Physics Letters · doi:10.1063/1.3634052 · Cited by 2,832
�ber die magnetische Nachwirkung
Preisach, F. (1935) · Zeitschrift f�r Physik · doi:10.1007/bf01349418 · Cited by 1,989
Ferroelectricity in Simple Binary ZrO2 and HfO2
Müller, J., Böscke, T. S., Schröder, U., Mueller, S., Bräuhaus, D., Böttger, U., Frey, L., & Mikolajick, T. (2012) · Nano Letters · doi:10.1021/nl302049k · Cited by 1,832
Self-citationScott, J. F. (2000) · Springer Series in Advanced Microelectronics · doi:10.1007/978-3-662-04307-3 · Cited by 1,424
Characterizing interactions in fine magnetic particle systems using first order reversal curves
Pike, C. R., Roberts, A. P., & Verosub, K. L. (1999) · Journal of Applied Physics · doi:10.1063/1.370176 · Cited by 1,024
Materlik, R., Künneth, C., & Kersch, A. (2015) · Journal of Applied Physics · doi:10.1063/1.4916707 · Cited by 866
Hyuk Park, M., Joon Kim, H., Jin Kim, Y., Lee, W., Moon, T., & Seong Hwang, C. (2013) · Applied Physics Letters · doi:10.1063/1.4811483 · Cited by 829
On the structural origins of ferroelectricity in HfO2 thin films
Sang, X., Grimley, E. D., Schenk, T., Schroeder, U. P., & LeBeau, J. M. (2015) · Applied Physics Letters · doi:10.1063/1.4919135 · Cited by 655
Self-citationStabilizing the ferroelectric phase in doped hafnium oxide
Hoffmann, M., Schroeder, U., Schenk, T., Shimizu, T., Funakubo, H., Sakata, O., Pohl, D., Drescher, M., Adelmann, C., Materlik, R., et al. (2015) · Journal of Applied Physics · doi:10.1063/1.4927805 · Cited by 606
Self-citationTagantsev, A. K., Stolichnov, I., Colla, E. L., & Setter, N. (2001) · Journal of Applied Physics · doi:10.1063/1.1381542 · Cited by 602
Cited by
Physical Mechanisms behind the Field‐Cycling Behavior of HfO2‐Based Ferroelectric Capacitors
Pešić, M., Fengler, F. P. G., Larcher, L., Padovani, A., Schenk, T., Grimley, E. D., Sang, X., LeBeau, J. M., Slesazeck, S., Schroeder, U., et al. (2016) · Advanced Functional Materials · doi:10.1002/adfm.201600590 · Cited by 964
Self-citationReview and perspective on ferroelectric HfO2-based thin films for memory applications
Park, M. H., Lee, Y. H., Mikolajick, T., Schroeder, U., & Hwang, C. S. (2018) · MRS Communications · doi:10.1557/mrc.2018.175 · Cited by 579
Self-citationLanthanum-Doped Hafnium Oxide: A Robust Ferroelectric Material
Schroeder, U., Richter, C., Park, M. H., Schenk, T., Pešić, M., Hoffmann, M., Fengler, F. P. G., Pohl, D., Rellinghaus, B., Zhou, C., et al. (2018) · Inorganic Chemistry · doi:10.1021/acs.inorgchem.7b03149 · Cited by 367
Self-citationEvidence for oxygen vacancies movement during wake-up in ferroelectric hafnium oxide
Starschich, S., Menzel, S., & Böttger, U. (2016) · Applied Physics Letters · doi:10.1063/1.4940370 · Cited by 308
Doped Hf0.5Zr0.5O2 for high efficiency integrated supercapacitors
Lomenzo, P. D., Chung, C.-C., Zhou, C., Jones, J. L., & Nishida, T. (2017) · Applied Physics Letters · doi:10.1063/1.4985297 · Cited by 117
Metadata
- Authors
- Schenk, T., Hoffmann, M., Ocker, J., Pešić, M., Mikolajick, T., & Schroeder, U.
- Venue
- ACS Applied Materials & Interfaces
- Publisher
- American Chemical Society (ACS)
- Published
- 2015-09-01
- Volume
- 7
- Issue
- 36
- Pages
- 20224-20233
- ISSN
- 1944-8244 (ISSN-L)
- 1944-8252
- OpenAlex
- W1129967587
- Cited by
- 280
- References
- 35
- FWCI
- 8.98
- Type
- journal article
- Language
- en
- Open access
- closed
About these checks
Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.
Statistics and arithmetic are recomputed, not judged.
Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.
What counts as a claim ›How we measure confidence ›How we check this ›
Are you an author, or do you see a problem with this page? Request a review
How to cite
Cite CoChat for the checks on this page, and the paper for its own findings.
- This page
- CoChat. (2026). Citation check: Complex Internal Bias Fields in Ferroelectric Hafnium Oxide. https://app.cochat.ai/papers/10.1021/acsami.5b05773
- The paper
- Schenk, T., Hoffmann, M., Ocker, J., Pešić, M., Mikolajick, T., & Schroeder, U. (2015). Complex Internal Bias Fields in Ferroelectric Hafnium Oxide. ACS Applied Materials & Interfaces. https://doi.org/10.1021/acsami.5b05773
Data sources
Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.
