The DOI matches its Crossref record; 14 of the 14 references it cites were found in a registry or an index.
Realization and electrical characterization of ultrathin crystals of layered transition-metal dichalcogenides
Abstract
Ultrathin crystals of the layered transition-metal dichalcogenide MoS2 (semiconducting) and TaS2 (metallic) were obtained by mechanical peeling or chemical exfoliation techniques and electrically contacted using electron-beam lithography. The MoS2 devices showed high field-effect mobility in the tens of cm2∕Vs and an on/off ratio higher than 105. The TaS2 devices remained metallic despite the fabrication process and showed an enhancement of the superconducting transition temperature and disappearance of the charge density wave phase anomaly at low temperature.
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Cites
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Metadata
- Authors
- Ayari, A., Cobas, E., Ogundadegbe, O., & Fuhrer, M. S.
- Venue
- Journal of Applied Physics
- Publisher
- AIP Publishing
- Published
- 2007-01-01
- Volume
- 101
- Issue
- 1
- ISSN
- 0021-8979 (ISSN-L)
- 1089-7550
- OpenAlex
- W1984823253
- Cited by
- 586
- References
- 14
- FWCI
- 0.37
- Type
- journal article
- Language
- en
- Open access
- closed
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- Ayari, A., Cobas, E., Ogundadegbe, O., & Fuhrer, M. S. (2007). Realization and electrical characterization of ultrathin crystals of layered transition-metal dichalcogenides. Journal of Applied Physics. https://doi.org/10.1063/1.2407388
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Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
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