Invited Article: Simultaneous mapping of temperature and stress in microdevices using micro-Raman spectroscopy
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Analysis of the Raman Stokes peak position and its shift has been frequently used to estimate either temperature or stress in microelectronics and microelectromechanical system devices. However, if both fields are evolving simultaneously, the Stokes shift represents a convolution of these effects, making it difficult to measure either quantity accurately. By using the relative independence of the Stokes linewidth to applied stress, it is possible to deconvolve the signal into an estimation of both temperature and stress. Using this property, a method is presented whereby the temperature and stress were simultaneously measured in doped polysilicon microheaters. A data collection and analysis method was developed to reduce the uncertainty in the measured stresses resulting in an accuracy of ±40MPa for an average applied stress of −325MPa and temperature of 520°C. Measurement results were compared to three-dimensional finite-element analysis of the microheaters and were shown to be in excellent agreement. This analysis shows that Raman spectroscopy has the potential to measure both evolving temperature and stress fields in devices using a single optical measurement.
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Agreement among SSERT measurements, comparison to Raman thermometry, and continuum multiphysics modeling provides confidence in the SSERT measurements and repeatability across test structures.
“The agreement amongst SSERT measurements, along with comparison to Raman thermometry [37,38] measurements and continuum multiphysics modeling not presented here, provides confidence in the SSERT measurements and repeatability across test structures.”
From Mean Free Path Effects on the Experimentally Measured Thermal Conductivity of Single-Crystal Silicon Microbridges (2013) · cites this paper as [38]
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Uncertainty in linewidth quantification of overlapping Raman bands
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Time-Resolved Micro-Raman Thermometry for Microsystems in Motion
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Micro-Raman Spectroscopy of Nanostructures
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Gate resistance thermometry: An electrical thermal characterization technique
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Self-citationLow thermal conductivity in 2 H -polytype Sn Se 2
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Assessing thermal damage in silicon PN-junctions using Raman thermometry
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Self-citationTemperature measurements of heated microcantilevers using scanning thermoreflectance microscopy
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- Authors
- Beechem, T., Graham, S., Kearney, S. P., Phinney, L. M., & Serrano, J. R.
- Affiliations
- Georgia Institute of Technology (US)
- Sandia National Laboratories (US)
- Venue
- Review of Scientific Instruments
- Publisher
- AIP Publishing
- Published
- 2007-06-01
- Volume
- 78
- Issue
- 6
- Pages
- 061301-061301
- ISSN
- 0034-6748 (ISSN-L)
- 1089-7623
- OpenAlex
- W2024886677
- Cited by
- 190
- References
- 27
- Citations by year
- 2026: 15 · 2025: 10 · 2024: 7 · 2023: 13 · 2022: 15 · 2021: 8 · 2020: 9 · 2019: 5 · 2018: 11 · 2017: 8 · 2016: 13 · 2015: 14 · 2014: 13 · 2013: 13 · 2012: 9
- FWCI
- 6.31
- Type
- journal article
- Language
- en
- Open access
- bronze
- doi.org
- Locations
- Review of Scientific Instruments (publishedVersion)
- PubMed (publishedVersion)
- OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information) (submittedVersion)
- SMARTech Repository (Georgia Institute of Technology) (submittedVersion)
- Funders
- National Science Foundation (0448795, DE-AC04-94AL85000)
- U.S. Department of Energy (DE–AC04–94AL85000, AC04-94AL85000)
- National Nuclear Security Administration (DE-AC04- 94AL85000)
- Laboratory Directed Research and Development (DE-AC04–94AL85000)
- Sandia National Laboratories (DEAC04-94AL85000, AC04-94AL85000)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Advanced MEMS and NEMS Technologies
- Life Sciences › Biochemistry, Genetics and Molecular Biology › Biophysics › Spectroscopy Techniques in Biomedical and Chemical Research
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Integrated Circuits and Semiconductor Failure Analysis
- Keywords
- micro-Raman spectroscopy, temperature measurement, stress measurement, microheaters, doped polysilicon, Stokes shift, deconvolution, microelectromechanical systems, finite element analysis, microelectronics
- MeSH terms
- Algorithms, Computer Simulation, Image Interpretation, Computer-Assisted, Manometry, Miniaturization, Models, Theoretical, Spectrum Analysis, Raman, Stress, Mechanical, Temperature, Thermography, Equipment Failure Analysis, Finite Element Analysis
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