Cited by 95Strong Light-Matter InteractionsPlasmonic and Surface Plasmon ResearchGaN-based semiconductor devices and materials

Cavity Polaritons in ZnO-Based Hybrid Microcavities

Shimada, R., Xie, J., Avrutin, V., Özgür, Ü., Morkoč, H.·2008·Applied Physics Letters

Abstract

Among wide-bandgap semiconductors, ZnO is a very attractive candidate for blue-ultraviolet lasers operating at room temperature owing to its large exciton binding energy and oscillator strength. Especially, ZnO-based microcavity structures are most conducive for polariton lasing at room temperature. We report the observation of cavity polaritons in bulk ZnO-based hybrid microcavities at room temperature. The bulk ZnO-based hybrid microcavities are composed of 29 pairs of Al0.5Ga0.5N∕GaN distributed Bragg reflector (DBR) at the bottom of the λ-thick cavity layer and eight pairs of SiO2∕Si3N4 DBR as the top mirror, which provided cavity Q values of ∼100. Anticrossing behavior between the lower and upper polariton branches was observed at room temperature. From the polariton dispersion curve, the vacuum Rabi splitting was estimated to be ∼50meV. These results are promising toward the realization of ZnO-based microcavity polariton devices.

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Crossref · 10.1063/1.2830022

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  • ZnO has a wide band gap (3.3 eV), optical transparency in the visible range, and a high exciton binding energy at room temperature (60 meV), making it suitable for the development of optical planar microcavities due to strong coupling generating exciton-polaritons at room temperature.

    “In addition to a wide band gap (3.3 eV) and optical transparency in the visible range, this semiconductor oxide also benefits from a high exciton binding energy at room temperature (60 meV), making it suitable for the development of optical planar microcavities due to the strong coupling, which generates exciton-polaritons at room temperature [99-102].”

    From Metal Oxide Thin Films for Advanced Photonic Applications (2026) · cites this paper as [102]

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Authors
Shimada, R., Xie, J., Avrutin, V., Özgür, Ü., & Morkoč, H.
Affiliations
  • Virginia Commonwealth University (US)
  • Virginia Commonwealth University Department of Electrical and Computer Engineering, School of Engineering, , Richmond, Virginia 23284, USA
Venue
Applied Physics Letters
Published
2008-01-07
Volume
92
Issue
1
ISSN
  • 0003-6951 (ISSN-L)
  • 1077-3118
OpenAlex
W1989466661
Cited by
95
References
15
Citations by year
2025: 1 · 2024: 2 · 2023: 2 · 2022: 4 · 2020: 5 · 2019: 2 · 2018: 1 · 2017: 3 · 2016: 6 · 2015: 2 · 2014: 3 · 2013: 6 · 2012: 12
FWCI
8.90
Type
journal article
Language
en
Open access
closed
Locations
  • Applied Physics Letters (publishedVersion)
  • VCU Scholars Compass (Virginia Commonwealth University) (submittedVersion)
Topics
  • Physical Sciences › Physics and Astronomy › Atomic and Molecular Physics, and Optics › Strong Light-Matter Interactions
  • Physical Sciences › Engineering › Biomedical Engineering › Plasmonic and Surface Plasmon Research
  • Physical Sciences › Physics and Astronomy › Condensed Matter Physics › GaN-based semiconductor devices and materials
Keywords
cavity polaritons, zinc oxide, hybrid microcavity, distributed Bragg reflector, AlGaN/GaN, vacuum Rabi splitting, polariton dispersion, avoided crossings, wide bandgap semiconductors

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