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Characteristics and mechanism of conduction/set process in TiN∕ZnO∕Pt resistance switching random-access memories
Abstract
The characteristics and mechanism of conduction/set process in TiN∕ZnO∕Pt-based resistance random access memory devices with stable and reproducible nanosecond bipolar switching behavior were studied. The dependencies of memory behavior on cell area, operating temperature, and frequency indicate that the conduction mechanism in low-resistance states is due to electrons hopping through filament paths. We also identify that the set process is essentially equivalent to a soft dielectric breakdown associated with a polarization effect caused by the migration of space charges under a low electric field stress. The generation/recovery of oxygen vacancies and nonlattice oxygen ions play a critical role in resistance switching.
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Citations
Cites
Nanoionics-based resistive switching memories
Waser, R., & Aono, M. (2007) · Nature Materials · doi:10.1038/nmat2023 · Cited by 4,923
Cited by
Wong, H.-S. P., Lee, H.-Y., Yu, S., Chen, Y.-S., Wu, Y., Chen, P.-S., Lee, B., Chen, F. T., & Tsai, M.-J. (2012) · Proceedings of the IEEE · doi:10.1109/jproc.2012.2190369 · Cited by 2,757
Yang, Y. C., Pan, F., Liu, Q., Liu, M., & Zeng, F. (2009) · Nano Letters · doi:10.1021/nl900006g · Cited by 876
Yu, S., Wu, Y., & Wong, H.-S. P. (2011) · Applied Physics Letters · doi:10.1063/1.3564883 · Cited by 288
Status and prospects of ZnO-based resistive switching memory devices
Simanjuntak, F. M., Panda, D., Wei, K.-H., & Tseng, T.-Y. (2016) · Nanoscale Research Letters · doi:10.1186/s11671-016-1570-y · Cited by 244
ZnO-based one diode-one resistor device structure for crossbar memory applications
Liu, Z.-J., Gan, J.-Y., & Yew, T.-R. (2012) · Applied Physics Letters · doi:10.1063/1.3701722 · Cited by 79
Metadata
- Authors
- Xu, N., Liu, L., Sun, X., Liu, X., Han, D., Wang, Y., Han, R., Kang, J., & Yu, B.
- Venue
- Applied Physics Letters
- Publisher
- AIP Publishing
- Published
- 2008-06-09
- Volume
- 92
- Issue
- 23
- ISSN
- 0003-6951 (ISSN-L)
- 1077-3118
- OpenAlex
- W2022250006
- Cited by
- 371
- References
- 1
- FWCI
- 23.31
- Type
- journal article
- Language
- en
- Open access
- closed
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- Xu, N., Liu, L., Sun, X., Liu, X., Han, D., Wang, Y., Han, R., Kang, J., & Yu, B. (2008). Characteristics and mechanism of conduction/set process in TiN∕ZnO∕Pt resistance switching random-access memories. Applied Physics Letters. https://doi.org/10.1063/1.2945278
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