The DOI matches its Crossref record; 10 of the 10 references it cites were found in a registry or an index.
Characteristic electroforming behavior in Pt/TiO2/Pt resistive switching cells depending on atmosphere
Open accessAbstract
Electroforming effects on the composition, structure, and electrical resistance of Pt/TiO2/Pt switching cells are investigated. The correlation between the electroforming procedure and the resulting bipolar switching behavior is discussed. The dependence of electroforming behavior on atmosphere is also identified, from which we define symmetric or asymmetric electroforming. The symmetry of electroforming is a key factor determining the resulting bipolar switching characteristics. From the experimental results we suggest a possible mechanism for electroforming in Pt/TiO2/Pt in terms of the formation of oxygen gas and vacancies in the vicinity of the anode.
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Cites
Nanoionics-based resistive switching memories
Waser, R., & Aono, M. (2007) · Nature Materials · doi:10.1038/nmat2023 · Cited by 4,923
Self-citationNonstoichiometry, diffusion, and electrical conductivity in binary metal oxides.
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Switching the electrical resistance of individual dislocations in single-crystalline SrTiO3
Szot, K., Speier, W., Bihlmayer, G., & Waser, R. (2006) · Nature Materials · doi:10.1038/nmat1614 · Cited by 1,651
Self-citationResistive switching mechanism of TiO2 thin films grown by atomic-layer deposition
Choi, B. J., Jeong, D. S., Kim, S. K., Rohde, C., Choi, S., Oh, J. H., Kim, H. J., Hwang, C. S., Szot, K., Waser, R., et al. (2005) · Journal of Applied Physics · doi:10.1063/1.2001146 · Cited by 1,150
Self-citationSwitching properties of thin Nio films
Gibbons, J. F., & Beadle, W. E. (1964) · Solid-State Electronics · doi:10.1016/0038-1101(64)90131-5 · Cited by 505
Coexistence of Bipolar and Unipolar Resistive Switching Behaviors in a Pt∕TiO[sub 2]∕Pt Stack
Jeong, D. S., Schroeder, H., & Waser, R. (2007) · Electrochemical and Solid-State Letters · doi:10.1149/1.2742989 · Cited by 320
Self-citationResistive switching and data reliability of epitaxial (Ba,Sr)TiO3 thin films
Oligschlaeger, R., Waser, R. M., Meyer, R., Karthäuser, S., & Dittmann, R. (2006) · Applied Physics Letters · doi:10.1063/1.2162860 · Cited by 124
Self-citationResistive Switching in Pt∕Al[sub 2]O[sub 3]∕TiO[sub 2]∕Ru Stacked Structures
Kim, K. M., Choi, B. J., Koo, B. W., Choi, S., Jeong, D. S., & Hwang, C. S. (2006) · Electrochemical and Solid-State Letters · doi:10.1149/1.2353899 · Cited by 108
Self-citationField-programmable rectification in rutile TiO2 crystals
Jameson, J. R., Fukuzumi, Y., Wang, Z., Griffin, P. B., Tsunoda, K., Meijer, G. I., & Nishi, Y. (2007) · Applied Physics Letters · doi:10.1063/1.2769961 · Cited by 101
Electroluminescence, Bistable Switching, and Dielectric Breakdown of Nb2O5 Diodes
Hickmott, T. W. (1969) · Journal of Vacuum Science and Technology · doi:10.1116/1.1492715 · Cited by 71
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Kwon, D.-H., Kim, K. M., Jang, J. H., Jeon, J. M., Lee, M. H., Kim, G. H., Li, X.-S., Park, G.-S., Lee, B., Han, S., et al. (2010) · Nature Nanotechnology · doi:10.1038/nnano.2009.456 · Cited by 2,092
Emerging memories: resistive switching mechanisms and current status
Jeong, D. S., Thomas, R., Katiyar, R. S., Scott, J. F., Kohlstedt, H., Petraru, A., & Hwang, C. S. (2012) · Reports on Progress in Physics · doi:10.1088/0034-4885/75/7/076502 · Cited by 1,106
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Metadata
- Authors
- Jeong, D. S., Schroeder, H., Breuer, U., & Waser, R.
- Venue
- Journal of Applied Physics
- Publisher
- AIP Publishing
- Published
- 2008-12-15
- Volume
- 104
- Issue
- 12
- ISSN
- 0021-8979 (ISSN-L)
- 1089-7550
- OpenAlex
- W2091322859
- Cited by
- 289
- References
- 10
- FWCI
- 16.44
- Type
- journal article
- Language
- en
- Open access
- green
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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.