Voltage-time dilemma of pure electronic mechanisms in resistive switching memory cells
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Metal/insulator/metal thin film stacks showing stable resistive switching are promising candidates for future use as a nonvolatile resistive random access memory, competitive to FLASH and DRAM. Although the switching mechanisms are not completely understood a lot of theories and models try to describe the effects. One of them postulates the trapping and detrapping of electronic charge in immobile traps as the reason for the resistance changes, also known as Simmons & Verderber model. This contribution shows that this “pure electronic” switching mechanism will face a voltage-time dilemma—general to all switching insulators—at conditions competitive to the state-of-the-art FLASH. There is an incompatibility between the long retention time (10 years) and the short READ/WRITE current pulses (tREAD/WRITE≤100 ns) at high densities (area≤100×100 nm2) at low applied voltages (≤1 V). This general dilemma is exemplified in two detailed scenarios with different electronic band and defect properties.
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Because programming and reading operations share identical terminals, there is a contradiction between the stability of trapped charges (retention) and the reliability of the programming process.
“However, as the programming and reading operations share identical terminals, there is a contradiction between the stability of the trapped charges (i.e., retention) and the reliability of the programming process (i.e., writing or erasing).[ 20 ]”
From Retention Secured Nonlinear and Self-Rectifying Analog Charge Trap Memristor for Energy-Efficient Neuromorphic Hardware (2023) · cites this paper as [20]
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Self-citationLin, X., Zhang, Q., Li, W., Yi, F., Ma, S., Qiu, G., Yi, J., Chen, J., Luo, Y., Zhang, C., et al. (2025) · Materials Horizons · doi:10.1039/d5mh01714a · Cited by 3 · see citing works
Oxygen vacancies kinetics in TaO 2 − h /Ta2O 5 − x memristive interfaces
Ferreyra, C., Martir, R. L., Rubi, D., & Sánchez, M. J. (2024) · Journal of Physics D Applied Physics · doi:10.1088/1361-6463/ad7155 · Cited by 3 · see citing works
Memristively programmable transistors
Tappertzhofen, S., Nielen, L., Valov, I., & Waser, R. M. (2021) · Nanotechnology · doi:10.1088/1361-6528/ac317f · Cited by 3 · see citing works
Self-citationDatta, A., Kishore, R., & Vishwakarma, K. (2023) · Royal Society of Chemistry eBooks · doi:10.1039/bk9781839169946-00270 · Cited by 3 · see citing works
Modeling defect-level switching for nonlinear and hysteretic electronic devices
Dong, J., & Jaramillo, R. (2024) · Journal of Applied Physics · doi:10.1063/5.0197121 · Cited by 3 · see citing works
Resistive switching near electrode interfaces: Estimations by a current model
Schroeder, H., Zurhelle, A. F., Stemmer, S., Marchewka, A., & Waser, R. M. (2013) · Journal of Applied Physics · doi:10.1063/1.4789944 · Cited by 3 · see citing works
Self-citationNanocrystal Memory Device Utilizing GaN Quantum Dots by RF MBE
Dimitrakis, P., Iliopoulos, E., & Normand, P. (2010) · MRS Proceedings · doi:10.1557/proc-1250-g06-03 · Cited by 2 · see citing works
An Analogue-Domain, Switch-Capacitor-Based Arithmetic-Logic Unit
Serb, A., & Prodromakis, T. (2019) · IEEE International Symposium on Circuits and Systems proceedings · doi:10.1109/iscas.2019.8702070 · Cited by 2 · see citing works
Hickmott, T. W. (2020) · Journal of Applied Physics · doi:10.1063/1.5130758 · Cited by 1 · see citing works
- Authors
- Schroeder, H., Zhirnov, V. V., Cavin, R. K., & Waser, R.
- Affiliations
- Forschungszentrum Jülich (DE)
- Semiconductor Research Corporation (US)
- Venue
- Journal of Applied Physics
- Publisher
- AIP Publishing
- Published
- 2010-03-01
- Volume
- 107
- Issue
- 5
- ISSN
- 0021-8979 (ISSN-L)
- 1089-7550
- OpenAlex
- W2019323909
- Cited by
- 108
- References
- 12
- Citations by year
- 2026: 1 · 2025: 5 · 2024: 7 · 2023: 6 · 2022: 3 · 2021: 11 · 2020: 8 · 2019: 8 · 2018: 4 · 2017: 4 · 2016: 7 · 2015: 9 · 2014: 8 · 2013: 10 · 2012: 7
- FWCI
- 6.81
- Type
- journal article
- Language
- en
- Open access
- green
- juser.fz-juelich.de
- Licence
- other-oa
- Locations
- Journal of Applied Physics (publishedVersion)
- JuSER (Forschungszentrum Jülich) (submittedVersion, other-oa)
- RWTH Publications (RWTH Aachen) (submittedVersion)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Advanced Memory and Neural Computing
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Ferroelectric and Negative Capacitance Devices
- Physical Sciences › Materials Science › Materials Chemistry › Phase-change materials and chalcogenides
- Keywords
- resistive random access memory, charge trapping and detrapping, retention time, low-voltage operation, defect properties, non-volatile memory
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