Charge trapping properties of the HfO2 layer with various thicknesses for charge trap flash memory applications

Review on high-k dielectrics reliability issues

Ribes, G., Mitard, J., Denais, M., Bruyere, S., Monsieur, F., Parthasarathy, C., Vincent, E., & Ghibaudo, G. (2005) · IEEE Transactions on Device and Materials Reliability · doi:10.1109/tdmr.2005.845236 · Cited by 533

Design considerations in scaled SONOS nonvolatile memory devices

Bu, J., & White, M. H. (2001) · Solid-State Electronics · doi:10.1016/s0038-1101(00)00232-x · Cited by 157

Charge trapping characteristics of atomic-layer-deposited HfO 2 films with Al 2 O 3 as a blocking oxide for high-density non-volatile memory device applications

Maikap, S., Lee, H. Y., Wang, T.-Y., Tzeng, P.-J., Wang, C. C., Lee, L. S., Liu, K. C., Yang, J.-R., & Tsai, M.-J. (2007) · Semiconductor Science and Technology · doi:10.1088/0268-1242/22/8/010 · Cited by 140

Characterization of charge trapping and high-field endurance for 15-nm thermally nitrided oxides

Liu, Z. H., Lai, P. T., & Cheng, Y. (1991) · IEEE Transactions on Electron Devices · doi:10.1109/16.69916 · Cited by 59

Electrical properties of SiO2/TiO2 high-k gate dielectric stack

Bera, M. K., & Maiti, C. K. (2006) · Materials Science in Semiconductor Processing · doi:10.1016/j.mssp.2006.10.008 · Cited by 41

Charge trapping studies on ultrathin ZrO2 and HfO2 high-k dielectrics grown by room temperature ultraviolet ozone oxidation

Ramanathan, S., McIntyre, P. C., Guha, S., & Gusev, E. (2004) · Applied Physics Letters · doi:10.1063/1.1636532 · Cited by 31

Dependence of charge trapping and tunneling on the silicon-nitride (Si3N4) thickness for tunnel barrier engineered nonvolatile memory applications

Jung, M.-H., Kim, K.-S., Park, G.-H., & Cho, W.-J. (2009) · Applied Physics Letters · doi:10.1063/1.3078279 · Cited by 30

Oxide-Trapped-Charge-Induced Gate-Diagonal Tunneling Suppression of Gate-Normal Tunnel Field-Effect Transistors

Koo, K. M., Woo, J. S., & Choi, W. Y. (2025) · IEEE Transactions on Nanotechnology · doi:10.1109/tnano.2025.3605557 · Cited by 4

Enhancement Mode GaN Tri-Gate MISHEMT With Fluorinated HfO₂ as Charge Trapping Layer in Hybrid Ferroelectric Gate Stack

Rai, R., Nguyen, K. Q., Tran, H. D., Ho, V. Q., Weng, Y. C., Mazhari, B., Kuo, H. C., & Chang, E. Y. (2025) · IEEE Journal of the Electron Devices Society · doi:10.1109/jeds.2025.3649208 · Cited by 4

Visible Light Wavelength-Dependent Erasing in AOS-Based Charge Trap TFTs for Enhanced Neuromorphic Display Performance

Jeong, H., Ahn, D., Park, S., Ju, G., Han, J., & Kim, Y. (2025) · ACS Applied Electronic Materials · doi:10.1021/acsaelm.5c00447 · Cited by 4

Energy-Efficient, Scalable Single-Layer MoS2–Based Synaptic Field-Effect Transistors

Kim, J., 김병주, Ma, J., Lim, S.-Y., Choi, M.-H., Jeong, H., Ji, J., Kang, J., Chang, J., Kwon, J., et al. (2025) · ACS Applied Electronic Materials · doi:10.1021/acsaelm.5c00808 · Cited by 4

Metal-HfO2-Ge capacitor: Its enhanced charge trapping properties with S-treated substrate and atomic-layer-deposited HfO2 layer

Park, I., Jung, Y. C., Seong, S., Ahn, J., & Lee, S. B. (2014) · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · doi:10.1116/1.4904730 · Cited by 4

First principles study on influence of oxygen vacancy in HfO2 on charge trapping memory

Guang-Zhen, D., Yue-Hua, D., Tai-Long, X., Jia-Yu, W., Yuan-Yang, Z., Jun-ning, C., & Liu, Q. (2014) · Acta Physica Sinica · doi:10.7498/aps.63.123101 · Cited by 4

Enhanced charge trapping characteristics through composite high-k material phase separation

Chai, P., Zhu, J., & Chen, J. (2023) · Applied Physics Letters · doi:10.1063/5.0170774 · Cited by 4

Effect of thermal annealing sequence on the crystal phase of HfO2 and charge trap property of Al2O3/HfO2/SiO2 stacks

Na, H., Jeong, J., Lee, J., Shin, H., Lee, S.-H., & Sohn, H. (2017) · Current Applied Physics · doi:10.1016/j.cap.2017.07.006 · Cited by 4

Improving Zr0.5Hf0.5O2-based charge-trapped performance by graphene oxide quantum dots

Wang, H., Ding, B., Tian, X., Zhao, R. X., Zhang, Y., Lü, C., Ren, D., & Yan, X. (2018) · Functional Materials Letters · doi:10.1142/s1793604718500935 · Cited by 4

Physical and electrical properties of band-engineered SiO2/(TiO2) x (SiO2)1−x stacks for nonvolatile memory applications

Oh, J., Na, H., Mok, I.-S., Kim, J., Lee, K., & Sohn, H. (2012) · Applied Physics A · doi:10.1007/s00339-012-6950-2 · Cited by 4

Charge Spreading Effect of Stored Charge on Retention Characteristics in SONOS NAND Flash Memory Devices

Kim, S., Yang, S., Kim, J.-S., Jeong, J.-K., Lee, H., & Lee, G. (2015) · Transactions on Electrical and Electronic Materials · doi:10.4313/teem.2015.16.4.183 · Cited by 4

Li‐Well ZnO Memtransistors: High Reliability for Neuromorphic Applications

Son, K., Kim, H., Han, D., Lim, H., & Lee, H. (2025) · Advanced Materials · doi:10.1002/adma.202506128 · Cited by 3

Improved memory characteristics of charge trap memory by employing double layered ZrO2 nanocrystals and inserted Al2O3

Tang, Z., Li, R., Zhang, X., Hu, D., & Zhao, Y. (2016) · Journal of Applied Physics · doi:10.1063/1.4959606 · Cited by 3

Dynamic Charge Centroid on Data Retention of Double-Nanostructure Nonvolatile Memory

Wang, J., Lin, C., Chen, C.-H., Huang, P., & Lai, C. (2012) · Applied Physics Express · doi:10.1143/apex.5.044201 · Cited by 3

Effect of bandgap engineering on the performance and reliability of a high-k based nanoscale charge trap flash memory

Zhu, C., Xu, Z., Huo, Z., Zheng, Z., Cui, Y., Wang, Y., Liu, J., Li, F., & Liu, M. (2012) · Journal of Physics D Applied Physics · doi:10.1088/0022-3727/45/6/065104 · Cited by 3

Comparison of Fluorinated HfO2and Si3N4Charge Trapping Layer for Nonvolatile Flash Memories

Chen, Y.-Y., Lei, G., Shen, Y.-J., Lin, S.-C., & Chen, Y.-C. (2012) · Ferroelectrics · doi:10.1080/00150193.2012.740288 · Cited by 3

Performance improvement of charge‐trap memory by using a stacked Zr0.46Si0.54O2/Al2O3 charge‐trapping layer

Tang, Z., Li, R., Hu, D., Zhang, X., & Zhao, Y. (2016) · physica status solidi (a) · doi:10.1002/pssa.201600143 · Cited by 3

120 MeV Ag high energy irradiation effects in physical and chemical properties of ALD grown HfO2 thin films and their applications

Kumar, R. (2024) · Journal of Radioanalytical and Nuclear Chemistry · doi:10.1007/s10967-024-09629-w · Cited by 3

Improvement of charge trapping memory performance by modulating band alignment with oxygen plasma

Chai, P., Zhu, J., Li, K., & Chen, J. (2024) · Applied Physics Letters · doi:10.1063/5.0224220 · Cited by 3

Local surface charge dissipation studied using force spectroscopy method of atomic force microscopy

Revilla, R. I., Yang, Y., & Wang, C. (2015) · Surface and Interface Analysis · doi:10.1002/sia.5761 · Cited by 3

Correlation between memory characteristics and energy band bending resulted from composition distribution of trapping layer for charge trap memory

Tang, Z., Li, R., Zhang, X., Geng, H., Zang, S., Zheng, H., Lian, M., & Hu, N. (2018) · Semiconductor Science and Technology · doi:10.1088/1361-6641/aae75e · Cited by 3

Enhancing Charge Trapping Performance of Hafnia Thin Films Using Sequential Plasma Atomic Layer Deposition

Kim, S. W., Yoo, J.-H., Park, W.-J., Lee, C., Lee, J., Kim, J.-H., Uhm, S.-H., & Lee, H. C. (2024) · Nanomaterials · doi:10.3390/nano14201686 · Cited by 2

Improved performances of metal-oxide-nitride-oxide-silicon memory with HfTiON as charge-trapping layer

Chen, J. X., Xu, J. P., Liu, L., & Lai, P. T. (2013) · Applied Physics Letters · doi:10.1063/1.4829880 · Cited by 2

Impact of electrical stress on total ionizing dose effects on graphene nano-disc non-volatile memory devices

Xi, K., Bi, J., Xu, Y., Li, Y. D., Zhang, Z., & Liu, M. (2020) · Microelectronics Reliability · doi:10.1016/j.microrel.2020.113882 · Cited by 2

Ultrafast reconfigurable direct charge trapping devices based on few-layer MoS2

高, H. 辉. G., Liu, X., Song, P., Wei, C., Jiazila, N., Sun, J., Wu, K., Guo, H., Yang, H., Bao, L., et al. (2024) · Chinese Physics B · doi:10.1088/1674-1056/ad8ecd · Cited by 2

Understanding ferroelectricity in sputtered aluminum nitride thin films on silicon

Gogi, V. K., Chae, C., Barua, A., Hwang, J., & Jha, R. (2025) · APL Materials · doi:10.1063/5.0246797 · Cited by 2

Enhanced Two States Current in MOS-Gated MIS Separate Write/Read Storage Device by Oxide Soft Breakdown in Remote Gate

Chen, W.-C., Yang, C.-F., & Hwu, J. (2018) · IEEE Transactions on Nanotechnology · doi:10.1109/tnano.2018.2880277 · Cited by 2

Simulation of charge-trapping effect on floating gate Si/Ge/Si quantum dots MOSFET memory with high-к tunnel oxide

Aji, A. S., & Darma, Y. (2013) · International Conference on Instrumentation, Communications, Information Technology, and Biomedical Engineering · doi:10.1109/icici-bme.2013.6698506 · Cited by 2

Polarization of Bi2Te3 thin film in a floating-gate capacitor structure

Yuan, H., Zhang, K., Li, H., Zhu, H., Bonevich, J. E., Baumgart, H., Richter, C. A., & Li, Q. (2014) · Applied Physics Letters · doi:10.1063/1.4904003 · Cited by 2

The effect of inserted SiO 2 thickness on memory characteristics for nonvolatile memory with stacked trapping layer

Tang, Z., Li, R., Zhang, X., & Hu, D. (2020) · Japanese Journal of Applied Physics · doi:10.35848/1347-4065/ab8d0a · Cited by 2

Improved memory characteristics for nonvolatile memory by using a double-potential well charge trapping layer

Tang, Z., Geng, H., Li, R., & Zhang, X. (2019) · Applied Physics Express · doi:10.7567/1882-0786/ab282e · Cited by 2

Electron trapping in HfO2 layer deposited over a HF last treated silicon substrate

Salomone, L. S., Cassani, M. V., Garcia–Inza, M., Carbonetto, S., Redin, E. G., Campabadal, F., & Faigón, A. (2024) · Microelectronic Engineering · doi:10.1016/j.mee.2024.112277 · Cited by 1

Simulation and Analysis of GaAs‐Au Layer‐HfO 2 Dual‐Band Photodetector with High Performance in Visible Spectral Region

Maurya, A., Vaithiyanathan, D., & Sharma, A. K. (2025) · Advanced Theory and Simulations · doi:10.1002/adts.202500319 · Cited by 1

High-Speed Multilevel nand Flash Memory With Tight $V_{\rm th}$ Distribution Using an Engineered Potential Well and Forward-Bias Adjusted Programming

Zhang, G., Wu, Z., & Yoo, W. J. (2011) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2011.2162731 · Cited by 1

Role of metal nanocrystals on the breakdown statistics of flash memory high-κ stacks

Feng, X., Raghavan, N., Mei, S., Du, L., Pey, K. L., & Wong, H. (2017) · Microelectronic Engineering · doi:10.1016/j.mee.2017.05.003 · Cited by 1

Investigation of Interface States in Si/NAOS-SiO2/HfO2 Structures Using Complete Acoustic Spectroscopy

Bury, P., Matsumoto, T., Hardoň, Š., Bellan, I., Janek, M., & Kobayashi, H. (2014) · Communications - Scientific letters of the University of Zilina · doi:10.26552/com.c.2014.1.3-9 · Cited by 1

Improvement of memory characteristics by employing a charge trapping layer with combining bent and flat energy bands*

Tang, Z., Li, R., & Zhang, X. (2020) · Chinese Physics B · doi:10.1088/1674-1056/ab7224 · Cited by 1

Non-volatile flash memory characteristics implementing high-k blocking layer

Rahman, S. (2018) · Cited by 1

Ultra-Power-Efficient Electrically Programmable Photonic Memory on a Heterogeneous III-V/Si Optical Computing PlatformPreprint

Cheung, S. S., Liang, D., Yuan, Y., Peng, Y., Hu, Y., Kurczveil, G., & Beausoleil, R. G. (2023) · Research Square · doi:10.21203/rs.3.rs-3098943/v1 · Cited by 1

Metal Contacts on Low-Dimensional Materials

Yuan, H. (2014) · doi:10.13021/mars/4472

Charge storage characteristics of atomic layer deposited ZrO2/Al2O3multilayered films

Tang, Z., Li, R., Zhu, X., & Liu, Z. G. (2012) · The European Physical Journal Applied Physics · doi:10.1051/epjap/2012120351

Novel Non-volatile Memory and Topological Insulator Field-effect Transistors

Zhu, H. (2013) · doi:10.13021/mars/4915

Statistical characterization and reliability modeling of novel high-K gate dielectric stacks

Nagarajan, R. (2012) · doi:10.32657/10356/50738

Investigation of charge loss characteristics of HfO2annealed in N2or O2ambient

Chu, Y.-Q., Huo, Z., Han, Y., Chen, G., Zhang, D., Li, X., & Liu, M. (2014) · Journal of Semiconductors · doi:10.1088/1674-4926/35/8/083004

Investigations on device design parameters of all-oxide transparent charge-trap memory thin-film transistors

Yun, D.-J., Kang, H.-B., & Yoon, S. (2016) · International Workshop on Active-Matrix Flatpanel Displays and Devices · doi:10.1109/am-fpd.2016.7543655

Electrical and charge trapping properties of HfO2/Al2O3 multilayer dielectric stacks

Davidović, V. S., Paskaleva, A., Spassov, D., Guziewicz, E., Krajewski, T., Golubović, S., Djoric-Veljkovic, S., Manic, I., Danković, D., & Stojadinović, N. (2017) · IEEE International Conference on Microelectronics (MIEL) · doi:10.1109/miel.2017.8190088

Reduction of Interface States Stress Generation by Oxygen Annealing of ALD Nanolaminated HfO2/Al2O3 Dielectric Stacks for Charge Trapping Devices

Skeparovski, A., Novkovski, N., Paskaleva, A., & Spassov, D. (2021) · IEEE International Conference on Microelectronics (MIEL) · doi:10.1109/miel52794.2021.9569062

Optimization of HfO2/Al2O3 Dielectric Stacks for Charge Trapping Memories

Spassov, D., & Paskaleva, A. (2021) · IEEE International Conference on Microelectronics (MIEL) · doi:10.1109/miel52794.2021.9569085

Characterization of the Electric Breakdowns in Metal-Insulator-Silicon Capacitor Structures with HfO2/Al2O3 Layers for Non-Volatile Memory Applications

Spassov, D., Paskaleva, A., Guziewicz, E., Ivanov, T., Stanchev, T., Davidović, V. S., Veljković, S., Mitrović, N., & Danković, D. (2023) · IEEE International Conference on Microelectronics (MIEL) · doi:10.1109/miel58498.2023.10315813

Unveiling charge-trapping storage capacity in MoS2/BiFeO3 heterostructure

Xia, Y., Chen, Y., Ablat, G., Zhang, Y., Tao, Y., Zhang, L., Zhang, L., Yin, L., Sun, J. C., Yao, Y., et al. (2025) · Applied Physics Letters · doi:10.1063/5.0276993

P‐148: Photolithography‐Based Micropatterning Integration of Quantum‐Dot Electroluminescent Displays with Nonvolatile Charge Trap Memory

Kim, E. A., Park, S., Kim, Y., & Cho, S.-Y. (2025) · SID Symposium Digest of Technical Papers · doi:10.1002/sdtp.18611

Optimization of Zr concentration in HZO-based charge trap layers for enhanced flash memory performance

Kim, S. H., Kim, D., Yoon, I., Lee, S., Jang, Y., Jeong, L. H., Lee, S., Woo, J., & Lee, J. W. (2025) · Applied Surface Science Advances · doi:10.1016/j.apsadv.2025.100914

Rapidly Erasable Ambipolar SnO Charge-Trap Memory With Low Dynamic Energy Consumption

Wang, H., Yao, Y., Dai, P., Wang, Y., Zhang, J., Li, Y., Xin, Q., & Song, A. M. (2026) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2026.3698067

Asymmetric charge trapping and emission kinetics in SiO 2 /HfO 2 for accurate transistor reliability simulation

Guang-Hua, X., Chen, S., & Liu, Y. (2026) · Chinese Physics B · doi:10.1088/1674-1056/ae7db4

First-principles dopant screening to suppress shallow traps in HfO2 charge-trap layers for 3D nand flash memory

Lee, J.-Y., & Song, Y.-H. (2026) · Journal of Applied Physics · doi:10.1063/5.0323662

Role of ultra-thin MgO tunneling and blocking layers in HfO2-based charge trap flash memory

Gorthy, A., Gogi, V. K., Srinivasan, R., Mayersky, J., Leedy, K. D., & Jha, R. (2026) · Memories - Materials Devices Circuits and Systems · doi:10.1016/j.memori.2026.100147

A Review on Emerging High‐ k Dielectrics for Charge Trapping Memory: Fundamentals, Fabrication, Modification and Applications

Niu, H., Fan, M., Lv, L., Wan, H., Ma, G., & Wang, H. (2026) · Small · doi:10.1002/smll.75278

Band-engineered high-k oxide nanodots embedded in Si3N4 charge-trap layers for enhanced flash memory performance

Lee, S., Lim, Y. S., Park, J. S., Kim, H. J., Yang, J., Son, Y., Kim, B., Choi, H., & Choi, C. (2026) · Applied Surface Science · doi:10.1016/j.apsusc.2026.168392

Role of ultra-thin MgO tunneling and blocking layers in HfO2-based charge trap flash memory

Gorthy, A., Gogi, V. K., Srinivasan, R., Mayersky, J., Leedy, K. D., & Jha, R. (2026) · Memories - Materials Devices Circuits and Systems · doi:10.1016/j.memori.2026.100147

Electrical properties of HfO 2 charge trap flash memory with SiO 2/HfO 2/Al 2O 3 engineered tunnel layer

Oh, S.-M., You, H.-W., Kim, K.-S., Lee, Y.-H., & Cho, W.-J. (2010) · Cited by 1

Charge Storage and Reliability Characteristics of Nonvolatile Memory Capacitors with HfO2/Al2O3-Based Charge Trapping Layers

Spassov, D., Paskaleva, A., Guziewicz, E., Wozniak, W., Stanchev, T., Ivanov, T., Wojewoda-Budka, J., & Janusz-Skuza, M. (2022) · Materials · doi:10.3390/ma15186285 · Cited by 19

The Study of Charge Trapping in Mahas Memory Structure with Various HfO2 Trap Layer Thicknesses

Na, H., Oh, J., Lee, K., & Sohn, H. (2014) · ECS Meeting Abstracts · doi:10.1149/ma2014-02/44/2117

Electron and Hole Trapping Characteristics of a Low-Temperature Atomic Layer-Deposited HfO 2 Charge-Trap Layer for Charge-Trap Flash Memory

Noh, T., Han, J., Jeong, B., Park, J., Kim, K., Lee, M., Kim, B., Choi, H., & Yoon, T. (2025) · ACS Applied Electronic Materials · doi:10.1021/acsaelm.4c02274 · Cited by 14