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An intrinsic stress scaling law for polycrystalline thin films prepared by ion beam sputtering

Windischmann, H.·1987·Journal of Applied Physics

Abstract

The intrinsic stresses of Al, Ti, Fe, Ta, Mo, W, Ge, Si, AlN, TiN, and Si3N4 films prepared by ion beam sputtering were investigated at low Td/Tm values. The intrinsic stress is compressive and its origin is explained in terms of the ion peening model. Knock-on linear cascade theory of forward sputtering is applied to derive a simple scaling law with the film’s physical properties. The results show that the stress is directly proportional to the elastic energy/mole, given by the quantity Q=EM/(1−ν)D, where E is Young’s modulus, M the atomic mass, D the density, and ν Poisson’s ratio. Stress data taken from the literature for a variety of materials deposited by low-pressure magnetron sputtering, and rf and ion beam sputtering also fit the correlation with Q. Furthermore, the model predicts a square-root dependence on the incident ion energy, suggesting that the stress is momentum rather than energy driven.

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Metadata

Authors
Windischmann, H.
Venue
Journal of Applied Physics
Published
1987-09-01
Volume
62
Issue
5
Pages
1800-1807
ISSN
  • 0021-8979 (ISSN-L)
  • 1089-7550
OpenAlex
W1992633939
Cited by
403
References
8
FWCI
7.13
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: An intrinsic stress scaling law for polycrystalline thin films prepared by ion beam sputtering. https://app.cochat.ai/papers/10.1063/1.339560
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Windischmann, H. (1987). An intrinsic stress scaling law for polycrystalline thin films prepared by ion beam sputtering. Journal of Applied Physics. https://doi.org/10.1063/1.339560

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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).

Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.