A Kinetic Model for Stress Generation in Thin Films Grown from Energetic Vapor Fluxes
Open accessAbstract
We have developed a kinetic model for residual stress generation in thin films grown from energetic vapor fluxes, encountered, e.g., during sputter deposition. The new analytical model considers sub-surface point defects created by atomic peening, along with processes treated in already existing stress models for non-energetic deposition, i.e., thermally activated diffusion processes at the surface and the grain boundary. According to the new model, ballistically induced sub-surface defects can get incorporated as excess atoms at the grain boundary, remain trapped in the bulk, or annihilate at the free surface, resulting in a complex dependence of the steady-state stress on the grain size, the growth rate, as well as the energetics of the incoming particle flux. We compare calculations from the model with in situ stress measurements performed on a series of Mo films sputter-deposited at different conditions and having different grain sizes. The model is able to reproduce the observed increase of compressive stress with increasing growth rate, behavior that is the opposite of what is typically seen under non-energetic growth conditions. On a grander scale, this study is a step towards obtaining a comprehensive understanding of stress generation and evolution in vapor deposited polycrystalline thin films.
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In PLD, atomic peening and collision-induced densification result in compressive stress.
“For example, in the case of PLD, 'atomic peening' and collision-induced densification result in compressive stress [153].”
From Metal Oxide Thin Films for Advanced Photonic Applications (2026) · cites this paper as [153]
The Introduction (page unavailable) identifies pulsed laser deposition as an energetic deposition process and says energetic bombardment may cause atomic peening, compressive stress, and collision-induced densification. The Kinetic Model section (page unavailable) links collision-induced densification to compressive stress. The paper does not establish that both mechanisms result in compressive stress specifically in PLD; its wording about peening is also qualified as a possibility. (LLM, conf=0.82)
Experimental — accuracy not yet measuredThermal stress arises from mismatch between thermal expansion coefficients of the deposited film and the substrate, while intrinsic stress is determined by deposition kinetics.
“The thermal stress may arise from the mismatch between the thermal expansion coefficients (CTE) of the deposited film and the substrate, while the intrinsic one is determined by the kinetics of the deposition [152,153].”
From Metal Oxide Thin Films for Advanced Photonic Applications (2026) · cites this paper as [153]
The Introduction links intrinsic stress evolution to deposition kinetics, including temperature, atomic mobility, growth rate, and energetic-particle flux. The Kinetic Model section likewise models stress as dependent on growth conditions. Our copy does not state that thermal stress arises from a mismatch between the film’s and substrate’s thermal expansion coefficients. (LLM, conf=0.87)
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Sun, D., Sun, Q., Xing, W., Sun, Z., Shang, H., Chang, L., Wang, X., Liu, P., & Hall, T. (2018) · AIP Advances · doi:10.1063/1.5045516 · Cited by 7 · see citing works
Metal Oxide Thin Films for Advanced Photonic Applications
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“For example, in the case of PLD, “atomic peening” and collision-induced densification result in compressive stress [153].”
- Authors
- Chason, E., Karlson, M., Colin, J. J., Magnfält, D., Sarakinos, K., & Abadias, G.
- Affiliations
- Brown University (US)
- Centre National de la Recherche Scientifique (FR)
- Linköping University (SE)
- Venue
- Journal of Applied Physics
- Publisher
- AIP Publishing
- Published
- 2016-04-13
- Volume
- 119
- Issue
- 14
- Pages
- 145307
- ISSN
- 0021-8979 (ISSN-L)
- 1089-7550
- OpenAlex
- W2336743563
- Cited by
- 90
- References
- 49
- Citations by year
- 2026: 3 · 2025: 5 · 2024: 9 · 2023: 9 · 2022: 10 · 2021: 13 · 2020: 11 · 2019: 12 · 2018: 11 · 2017: 6 · 2016: 1
- FWCI
- 8.63
- Type
- journal article
- Language
- en
- Open access
- green
- www.osti.gov
- Locations
- Journal of Applied Physics (publishedVersion)
- OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information) (submittedVersion)
- HAL (submittedVersion)
- Funders
- U.S. Department of Energy (DE-SC0008799)
- Linköpings Universitet (Dnr-LiU-2015-01510, LiU Research Fellows Program, 2011-2015)
- Topics
- Physical Sciences › Engineering › Mechanics of Materials › Metal and Thin Film Mechanics
- Physical Sciences › Engineering › Mechanical Engineering › Surface Treatment and Residual Stress
- Physical Sciences › Materials Science › Electronic, Optical and Magnetic Materials › Copper Interconnects and Reliability
- Keywords
- residual stress, thin film growth, sputter deposition, grain boundaries, thermally activated diffusion, grain size effects, growth rate (crystal and thin-film growth), molybdenum thin films, compressive stress, kinetic model
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