The DOI matches its Crossref record; 5 of the 5 references it cites were found in a registry or an index.
The influence of oxygen on the electrical and optical properties of GaN crystals grown by metalorganic vapor phase epitaxy
Abstract
Oxygen was observed to influence the electrical and optical properties of GaN layers grown by metalorganic vapor phase epitaxy. The carrier concentrations obtained from Van der Pauw–Hall measurements increased an order of magnitude when oxygen was incorporated into the grown layers. Additionally, the presence of oxygen in the GaN layers also changed the compensation behavior of Zn. Anomalous behavior of optical transitions in the oxygen-doped GaN layers was observed by optical absorption spectroscopy and low-temperature (4.2 K) photoluminescence measurements. These properties were studied as a function of growth parameters including growth temperature, amount of doping, etc. A model based on impurity band formation is proposed to explain these experimental results, and it is concluded that oxygen is a ‘‘shallow’’ deep donor in GaN.
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Citations
Cites
THE PREPARATION AND PROPERTIES OF VAPOR-DEPOSITED SINGLE-CRYSTAL-LINE GaN
Maruska, H. P., & Tietjen, J. J. (1969) · Applied Physics Letters · doi:10.1063/1.1652845 · Cited by 1,350
Electrical properties of n-type vapor-grown gallium nitride
Ilegems, M., & Montgomery, H. C. (1973) · Journal of Physics and Chemistry of Solids · doi:10.1016/s0022-3697(73)80090-3 · Cited by 205
On the origin of free carriers in high‐conducting n‐GaN
Seifert, W., Franzheld, R., Butter, E., Sobotta, H., & Riede, V. (1983) · Crystal Research and Technology · doi:10.1002/crat.2170180314 · Cited by 149
Preparation, Stability, and Luminescence of Gallium Nitride
Lorenz, M., & Binkowski, B. B. (1962) · Journal of The Electrochemical Society · doi:10.1149/1.2425318 · Cited by 111
GaN blue light emitting diodes prepared by metalorganic chemical vapor deposition
Kawabata, T., Matsuda, T., & Koike, S. (1984) · Journal of Applied Physics · doi:10.1063/1.334277 · Cited by 63
Cited by
First-principles calculations for defects and impurities: Applications to III-nitrides
Van de Walle, C. G., & Neugebauer, J. (2004) · Journal of Applied Physics · doi:10.1063/1.1682673 · Cited by 3,257
Some effects of oxygen impurities on AlN and GaN
Slack, G. A., Schowalter, L. J., Morelli, D., & Freitas, J. A. (2002) · Journal of Crystal Growth · doi:10.1016/s0022-0248(02)01753-0 · Cited by 415
Kim, W., Botchkarev, A. E., Salvador, A., Popovici, G., Tang, H., & Morkoç, H. (1997) · Journal of Applied Physics · doi:10.1063/1.365801 · Cited by 168
Metadata
- Authors
- Chung, B.-C., & Gershenzon, M.
- Venue
- Journal of Applied Physics
- Publisher
- AIP Publishing
- Published
- 1992-07-15
- Volume
- 72
- Issue
- 2
- Pages
- 651-659
- ISSN
- 0021-8979 (ISSN-L)
- 1089-7550
- OpenAlex
- W2068665387
- Cited by
- 300
- References
- 5
- FWCI
- 2.84
- Type
- journal article
- Language
- en
- Open access
- closed
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- Chung, B.-C., & Gershenzon, M. (1992). The influence of oxygen on the electrical and optical properties of GaN crystals grown by metalorganic vapor phase epitaxy. Journal of Applied Physics. https://doi.org/10.1063/1.351848
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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
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