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The DOI matches its Crossref record; 2 of the 2 references it cites were found in a registry or an index.

Thermal conduction inhomogeneity of nanocrystalline diamond films by dual-side thermoreflectance

Bozorg-Grayeli, Elah, Sood, Aditya, Asheghi, Mehdi, Gambin, Vincent, Sandhu, Rajinder, Feygelson, Tatyana I., Pate, Bradford B., Hobart, Karl, Goodson, Kenneth E.·2013·Applied Physics Letters
DOI 10.1063/1.4796168
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Abstract

Thin diamond films of thickness near 1 μm can have highly nonuniform thermal conductivities owing to spatially varying disorder associated with nucleation and grain coalescence. Here, we examine the nonuniformity for nanocrystalline chemical vapor deposited diamond films of thickness 0.5, 1.0, and 5.6 μm using picosecond thermoreflectance from both the top and bottom diamond surfaces, enabled by etching a window in the silicon substrate. The extracted local thermal conductivities vary from less than 100 W m−1 K−1 to more than 1300 W m−1 K−1 and suggest that the most defective material is confined to within 1 μm of the growth surface.

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Crossref · 10.1063/1.4796168

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2 of 2 references verified0 citation errors · 0 not checkable

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  • Transient thermoreflectance has been widely applied to explore thermal properties of novel materials ranging from low thermal conductivity ≤0.1 W/m·K of hybrid materials and fullerene derivatives to very high thermal conductivity such as graphene.

    “Transient thermoreflectance method has been widely applied to explore thermal properties of novel materials that ranging from low thermal conductivity of ≤ 0.1 W/m•K of hybrid materials [132,133] and fullerene derivatives [134,135], to very high thermal conductivity such as graphene [136].”

    From Measurement Techniques for Thermal Conductivity and Interfacial Thermal Conductance of Bulk and Thin Film Materials (2016) · cites this paper as [136]

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Research works printed but not linked: 30

  1. 2006, AlGaN/GaN HEMT on Diamond Technology Demonstration, 271
  2. 2007, IEEE Electron Device Lett., 28, 948, 10.1109/LED.2007.908490 · DOI
  3. 2009, Electron. Lett., 45, 758, 10.1049/el.2009.1122 · DOI
  4. 2012, IEEE Electron Device Lett., 33, 23, 10.1109/LED.2011.2171031 · DOI
  5. Thermal characterization of GaN-on-diamond substrates for HEMT applications, 435
  6. 1968, J. Appl. Phys., 39, 2915, 10.1063/1.1656693 · DOI
  7. 1981, J. Cryst. Growth, 52, 219, 10.1016/0022-0248(81)90197-4 · DOI
  8. 1983, J. Cryst. Growth, 62, 642, 10.1016/0022-0248(83)90411-6 · DOI
  9. 1986, Jpn. J. Appl. Phys., Part 2, 25, L519, 10.1143/JJAP.25.L519 · DOI
  10. 1988, Appl. Surf. Sci., 33–34, 553, 10.1016/0169-4332(88)90352-2 · DOI
  11. 2003, J. Appl. Phys., 93, 2164, 10.1063/1.1537465 · DOI
  12. Analysis of HEMT multilayered structures using a 2D finite volume model, 224
  13. Thermal conductivity, anisotropy, and interface resistances of diamond on poly-AlN, 1059
  14. 1964, J. Appl. Phys., 35, 3460, 10.1063/1.1713251 · DOI · Paper page
  15. 1990, Phys. Rev. B, 42, 1104, 10.1103/PhysRevB.42.1104 · DOI
  16. 1993, Phys. Rev. Lett., 70, 3764, 10.1103/PhysRevLett.70.3764 · DOI
  17. 1992, Nature, 359, 401, 10.1038/359401a0 · DOI
  18. 1988, J. Appl. Phys., 64, 3063, 10.1063/1.341571 · DOI
  19. 1995, J. Appl. Phys., 77, 1385, 10.1063/1.358950 · DOI
  20. 1997, J. Thermophys. Heat Transfer, 11, 506, 10.2514/2.6291 · DOI
  21. 1996, J. Heat Transfer, 118, 279, 10.1115/1.2825842 · DOI
  22. 1972, J. Appl. Phys., 43, 2376, 10.1063/1.1661506 · DOI
  23. 1986, J. Appl. Phys., 60, 285, 10.1063/1.337642 · DOI
  24. 2009, IEEE Electron Device Lett., 30, 1269, 10.1109/LED.2009.2032937 · DOI
  25. 2010, IEEE Electron Device Lett., 31, 56, 10.1109/LED.2009.2035139 · DOI
  26. 1999, High Temp. - High Press., 31, 293, 10.1068/htrt171 · DOI
  27. 2004, Rev. Sci, Instrum., 75, 5119, 10.1063/1.1819431 · DOI · Paper page
  28. 1962, J. Chem. Phys., 36, 1903, 10.1063/1.1701288 · DOI
  29. 2001, Appl. Phys. Lett., 78, 3331, 10.1063/1.1371536 · DOI
  30. 1994, Phys. Rev. B, 50, 3702, 10.1103/PhysRevB.50.3702 · DOI

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Metadata

Authors
Bozorg-Grayeli, E., Sood, A., Asheghi, M., Gambin, V., Sandhu, R., Feygelson, T. I., Pate, B. B., Hobart, K., & Goodson, K. E.
Affiliations
  • Department of Mechanical Engineering, Stanford University 1 , Stanford, California 94305, USA
  • Northrop Grumman Corporation 3 , San Diego, California 92127, USA
  • Science Applications International Corporation 4 , McLean, Virginia 22102, USA
  • Naval Research Laboratory 5 , Washington, DC 20375, USA
Venue
Applied Physics Letters
Publisher
AIP Publishing
Published
2013-03-18
Volume
102
Issue
11
ISSN
  • 0003-6951
  • 1077-3118
DOI
10.1063/1.4796168
Cited by
42
References
2
Language
en
Update notices
correction (2016-04-29)

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