Cited by 64Advanced Memory and Neural ComputingPhysical Unclonable Functions (PUFs) and Hardware SecurityFerroelectric and Negative Capacitance Devices

A True Random Number Generator Using Threshold‐Switching‐Based Memristors in an Efficient Circuit Design

Woo, Kyung Seok, Wang, Yongmin, Kim, Jihun, Kim, Yumin, Kwon, Young Jae, Yoon, Jung Ho, Kim, Woohyun, Hwang, Cheol Seong·2019·Advanced Electronic Materials

Abstract

A true random number generator (TRNG) based on the stochastic delay and relaxation times of the threshold switching (TS) behavior in a Pt/HfO 2 /TiN memristor is proposed. The stochasticities of this device are attributed to its electron trapping and detrapping processes. This electronic‐switching‐based memristor exhibits several advantages, such as low power consumption and high reliability. A new circuit is designed to improve the simplicity, miniaturization, and lifetime of TRNG. The bitstreams collected from this TRNG pass the National Institute of Standards and Technology randomness tests without postprocessing, verifying the feasibility of adopting the memristor in hardware security applications. The bit generation rate in this work is sufficient for encryption applications requiring low power and low speed.

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Crossref · 10.1002/aelm.201800543

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26 of 26 references verified0 citation errors · 0 not checkable

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  • tRNGs such as RRAM or MRAM are widely studied given their inherent switching stochasticity as an entropy source, which relies on material-induced variations.

    “For example, tRNGs such as RRAM or MRAM, which are not Si-based complementary metal-oxide semiconductor (CMOS) devices, are widely studied given their inherent switching stochasticity as an entropy source, which relies on material-induced variations (11–18).”
  • Their lack of compatibility with CMOS fabrication standards makes it difficult to apply them directly to the current CMOS logic platform used for mass production.

    “Moreover, their lack of compatibility with CMOS fabrication standards makes it difficult to apply them directly to the current CMOS logic platform used for mass production.”
  • These tRNGs require a few entropy extraction circuits, each of which consumes power at the milliwatt level.

    “However, these tRNGs require a few entropy extraction circuits, each of which consumes power at the milliwatt level.”

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Authors
Woo, K. S., Wang, Y., Kim, J., Kim, Y., Kwon, Y. J., Yoon, J. H., Kim, W., & Hwang, C. S.
Affiliations
Seoul National University (KR)
Corresponding author
Hwang, Cheol Seong
Venue
Advanced Electronic Materials
Publisher
Wiley
Published
2018-11-28
Volume
5
Issue
2
ISSN
2199-160X (ISSN-L)
OpenAlex
W2902832852
Cited by
64
References
26
Citations by year
2026: 9 · 2025: 10 · 2024: 14 · 2023: 12 · 2022: 4 · 2021: 10 · 2020: 4 · 2019: 1
FWCI
1.43
Type
journal article
Language
en
Open access
closed
Locations
Advanced Electronic Materials (publishedVersion)
Funders
Korea Institute of Science and Technology (2E27731)
Topics
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Advanced Memory and Neural Computing
  • Physical Sciences › Computer Science › Hardware and Architecture › Physical Unclonable Functions (PUFs) and Hardware Security
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Ferroelectric and Negative Capacitance Devices
Keywords
true random number generator, memristors, threshold switching, electron trapping and detrapping, stochastic delay, relaxation time, hardware security, randomness testing, low-power encryption, circuit design

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