The DOI matches its Crossref record; 7 of the 7 references it cites were found in a registry or an index.
Quantum capacitance devices
Abstract
Two-dimensional electron gas (2DEG) in a quantum well or inversion layer, unlike an ordinary grounded metallic plane, does not completely screen an applied transverse electric field. Owing to its Fermi degeneracy energy, a 2DEG manifests itself as a capacitor in series, whose capacitance per unit area equals CQ=me2/πℏ2, where m is the effective electron mass in the direction transverse to the quantum well. Partial penetration of an external field through a highly conducting 2DEG allows the implementation of several novel high-speed devices, including a three-terminal resonant-tunneling transistor and a gate-controlled thermionic emission transistor.
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Citations
Cites
Electronic properties of two-dimensional systems
Ando, T., Fowler, A. B., & Stern, F. (1982) · Reviews of Modern Physics · doi:10.1103/revmodphys.54.437 · Cited by 7,455
Luryi, S., & Capasso, F. (1985) · Applied Physics Letters · doi:10.1063/1.96276 · Cited by 124
Self-citationMorkoç, H., Chen, J. H., Reddy, U. K., Henderson, T., & Luryi, S. (1986) · Applied Physics Letters · doi:10.1063/1.97355 · Cited by 83
Self-citationTheory of the carrier-density fluctuations in an IGFET near threshold
Brews, J. R. (1975) · Journal of Applied Physics · doi:10.1063/1.321863 · Cited by 79
Inverted base-collector tunnel transistors
Bonnefoi, A. R., Chow, D. H. C., & McGill, T. C. (1985) · Applied Physics Letters · doi:10.1063/1.95966 · Cited by 72
Conduction mechanisms in bandtails at the SiSiO2 interface
Arnold, E. (1976) · Surface Science · doi:10.1016/0039-6028(76)90113-8 · Cited by 56
Evidence for a mobility edge in inversion layers. II
Stern, F. (1974) · Journal of Vacuum Science and Technology · doi:10.1116/1.1318714 · Cited by 9
Cited by
Theory of ballistic nanotransistors
Rahman, A., Guo, J., Datta, S., & Lundstrom, M. S. (2003) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2003.815366 · Cited by 769
Capacitance, admittance, and rectification properties of small conductors
Buttiker, M. (1993) · Journal of Physics: Condensed Matter · doi:10.1088/0953-8984/5/50/017 · Cited by 450
Zomer, P. J., Guimarães, M. H. D., Brant, J. C., Tombros, N., & van Wees, B. J. (2014) · Applied Physics Letters · doi:10.1063/1.4886096 · Cited by 408
Letchworth-Weaver, K., & Arias, T. A. (2012) · Physical Review B · doi:10.1103/physrevb.86.075140 · Cited by 351
Tunable interacting composite fermion phases in a half-filled bilayer-graphene Landau level
Zibrov, A. A., Kometter, C., Zhou, H., Spanton, E. M., Taniguchi, T., Watanabe, K., Zaletel, M. P., & Young, A. F. (2017) · Nature · doi:10.1038/nature23893 · Cited by 265
Metadata
- Authors
- Luryi, S.
- Venue
- Applied Physics Letters
- Publisher
- AIP Publishing
- Published
- 1988-02-08
- Volume
- 52
- Issue
- 6
- Pages
- 501-503
- ISSN
- 0003-6951 (ISSN-L)
- 1077-3118
- OpenAlex
- W1966943929
- Cited by
- 932
- References
- 7
- FWCI
- 4.04
- Type
- journal article
- Language
- en
- Open access
- closed
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Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
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