Cited by 138Topological Materials and PhenomenaTerahertz technology and applicationsLaser-Matter Interactions and Applications

Spectral dynamics of shift current in ferroelectric semiconductor SbSI

Open access
Sotome, M., Nakamura, M., Fujioka, J., Ogino, M., Kaneko, Y., Morimoto, T., Zhang, Y., Kawasaki, M. +3 more·2019·Proceedings of the National Academy of Sciences

Abstract

Significance: Shift current is one of the bulk photovoltaic phenomena in the materials without inversion symmetry, originating from the geometric Berry phase of the constituting electron bands. This concept of photocurrent generation based on the real-space shift of the electron cloud on the short timescale of optical transition is distinct from that of conventional p–n junction photovoltaics, where the carriers are driven by the built-in Coulomb potential. We experimentally demonstrate for a ferroelectric polar semiconductor how the subpicosecond charge swing on the relevant chemical bond changes its dynamics while scanning the excitation photon energy across the bandgap. On the interband photoexcitation above the bandgap, a finite net charge flow is produced along the electrically polar direction.

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Crossref · 10.1073/pnas.1802427116

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  • Shift currents can be traced to a local geometric property defined by the difference in Berry connection between bands participating in the optical transition.

    “Shift currents, resulting from the real space coherent shift of electron density following photoexcitation42, can be traced to a local geometric property defined by the difference in Berry connection between bands participating in the optical transition86,87.”

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Authors
Sotome, M., Nakamura, M., Fujioka, J., Ogino, M., Kaneko, Y., Morimoto, T., Zhang, Y., Kawasaki, M., Nagaosa, N., Tokura, Y., & Ogawa, N.
Affiliations
  • RIKEN Center for Emergent Matter Science (JP)
  • Japan Science and Technology Agency (JP)
  • The University of Tokyo (JP)
  • University of California, Berkeley (US)
  • Leibniz Institute for Solid State and Materials Research (DE)
Corresponding author
Sotome, M.
Venue
Proceedings of the National Academy of Sciences
Published
2019-01-22
Volume
116
Issue
6
Pages
1929-1933
ISSN
  • 0027-8424 (ISSN-L)
  • 1091-6490
OpenAlex
W2785837563
Cited by
138
References
50
Citations by year
2026: 16 · 2025: 17 · 2024: 18 · 2023: 14 · 2022: 20 · 2021: 15 · 2020: 25 · 2019: 12 · 2018: 1
FWCI
7.91
Type
journal article
Language
en
Open access
Locations
  • Proceedings of the National Academy of Sciences (publishedVersion, cc-by-nc-nd)
  • Europe PMC (PubMed Central) (publishedVersion, cc-by-nc-nd)
  • PubMed Central (publishedVersion, cc-by-nc-nd)
  • PubMed (publishedVersion)
  • arXiv (Cornell University) (submittedVersion)
  • OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information) (submittedVersion)
  • RENATE (submittedVersion, cc-by-nc-nd)
  • MPG.PuRe (Max Planck Society) (submittedVersion)
  • arXiv (Cornell University)
  • RENATE
Funders
  • MEXT | Japan Society for the Promotion of Science (24224009, 16K13705, 17H02914, 16H00981, 18K14155)
  • MEXT | Japan Science and Technology Agency (JPMJPR16R5, JPMJPR15R5, JPMJPR17I3)
  • Deutsche Forschungsgemeinschaft (SFB1143)
Topics
  • Physical Sciences › Physics and Astronomy › Atomic and Molecular Physics, and Optics › Topological Materials and Phenomena
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Terahertz technology and applications
  • Physical Sciences › Physics and Astronomy › Atomic and Molecular Physics, and Optics › Laser-Matter Interactions and Applications
Keywords
shift current, ferroelectric semiconductors, Berry connection, terahertz emission, ultrafast electron dynamics, interband transitions, inversion symmetry breaking, photoexcitation, spectral dynamics

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