Evaluation of Aging's Effect on Temperature-Sensitive Electrical Parameters in SiC mosfets
Abstract
The temperature-sensitive electrical parameters (TSEPs) have been used in silicon carbide (SiC) MOSFETS junction temperature measurement for over-temperature protection and condition monitoring. However, the device aging can affect the TSEPs and thus leads to false T3measurement. In this article, the aging's impacts on various TSEPs are comprehensively investigated. Specifically, utilizing the dc power cycling test, both the gate oxide instability and package degradation are considered. Then the commercial devices with different structures are aged, and their temperature-dependent static and switching characteristics are evaluated at different aging cycles. Both the positive gate bias-induced threshold voltage shift and package degradation are observed, and their impacts on each TSEP are evaluated independently. Based on the evaluation results at various operating conditions, the temperature measurement errors due to different aging mechanisms are well summarized for each TSEP. From the dc power cycling test result, the package degradation's impact on TSEPs is found to be more significant than the gate oxide instability. It is pointed out that the aging's effect on TSEPs is an important factor that needs to be considered for accurate T3measurement in SiC MOSFETS.
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Package degradation at lower currents does not affect the body diode voltage.
“However, the package degradation at lower currents does not affect the body diode voltage.”
From AC Power Cycling Test Setup and Condition Monitoring Tools for SiC-Based Traction Inverters (2023) · cites this paper as [85]
Body diode voltage at lower current is highly sensitive and linear yet hard to implement online.
“The body diode voltage at lower current is highly sensitive and linear yet hard to implement online.”
From AC Power Cycling Test Setup and Condition Monitoring Tools for SiC-Based Traction Inverters (2023) · cites this paper as [85]
The package degradation effect on the body diode is significant at high currents.
“The package degradation effect on the body diode is significant at high currents.”
From AC Power Cycling Test Setup and Condition Monitoring Tools for SiC-Based Traction Inverters (2023) · cites this paper as [85]
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- Authors
- Yang, F., Ugur, E., & Akin, B.
- Affiliations
- The University of Texas at Dallas (US)
- Venue
- IEEE Transactions on Power Electronics
- Published
- 2020-06
- Volume
- 35
- Issue
- 6
- Pages
- 6315-6331
- ISSN
- 0885-8993 (ISSN-L)
- 1941-0107
- OpenAlex
- W2983240990
- Cited by
- 121
- References
- 69
- Citations by year
- 2026: 13 · 2025: 26 · 2024: 28 · 2023: 13 · 2022: 16 · 2021: 14 · 2020: 10 · 2019: 1
- FWCI
- 3.69
- Type
- journal article
- Language
- en
- Open access
- closed
- Licence
- Locations
- IEEE Transactions on Power Electronics (publishedVersion)
- Funders
- National Science Foundation (1454311)
- Semiconductor Research Corporation (2712.026)
- Texas Instruments Foundational Technology Research Center on Power Density (1806417)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Silicon Carbide Semiconductor Technologies
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Radiation Effects in Electronics
- Physical Sciences › Physics and Astronomy › Condensed Matter Physics › GaN-based semiconductor devices and materials
- Keywords
- SiC MOSFET, temperature-sensitive electrical parameters, device aging, junction temperature measurement, overheating prevention, condition monitoring, gate oxide degradation, threshold voltage shift, temperature measurement error, switching characteristics
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