The low-temperature analysis of narrow GaAs/AlGaAs heterojunction wires
Abstract
The authors have measured the magnetoresistance of narrow GaAs/AlGaAs heterojunction wires at temperatures down to 0.04 K and in magnetic fields of up to 1.2 T. The analysis of the low-field magnetoresistance is consistent with a mobility-dependent saturation of the thermal diffusion and phase-breaking lengths. At higher fields, one-dimensional subband depopulation and Shubnikov-de Haas oscillations are present. They discuss how studies of the temperature and magnetic field dependence of these various effects provide important information on the possible nature of electronic transport in the wires.
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- Authors
- Bird, J. P., Grassie, A. D. C., Lakrimi, M., Hutchings, K. M., Meeson, P., Harris, J. J., & Foxon, C. T.
- Affiliations
- University of Sussex (GB)
- ORCID
- Venue
- Journal of Physics: Condensed Matter
- Publisher
- IOP Publishing
- Published
- 1991-04-29
- Volume
- 3
- Issue
- 17
- Pages
- 2897-2906
- ISSN
- 0953-8984 (ISSN-L)
- 1361-648X
- OpenAlex
- W2053477060
- Cited by
- 24
- References
- 21
- FWCI
- 1.60
- Type
- journal article
- Language
- en
- Open access
- closed
- Locations
- Journal of Physics Condensed Matter (publishedVersion)
- Topics
- Physical Sciences › Physics and Astronomy › Atomic and Molecular Physics, and Optics › Quantum and electron transport phenomena
- Physical Sciences › Physics and Astronomy › Atomic and Molecular Physics, and Optics › Semiconductor Quantum Structures and Devices
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Advancements in Semiconductor Devices and Circuit Design
- Keywords
- magnetoresistance, low-temperature transport, one-dimensional electron transport, thermal diffusion length, subband depopulation, Shubnikov-de Haas oscillations, electron mobility, quantum wires
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