Improved voltage margins using linear error-correcting codes in resistor-logic demultiplexers for nanoelectronics
Abstract
We present a family of demultiplexer circuit designs based on linear error-correcting codes, which can be laid out on nanoelectronic crossbar structures. The crossbars are assumed to have configurable resistors at the crosspoint junctions, and the demultiplexer circuits are therefore implemented using resistor logic. In general, resistor logic offers poor voltage margins when implementing digital circuits, but the circuit construction we present allows us to circumvent this problem by capitalizing on the minimum-distance property of codes to avoid certain problem cases, and thus achieve a much larger voltage margin. For each linear code, there is a corresponding demultiplexer circuit prescribed by this construction, and thus a large family of demultiplexer circuits is defined. When a demultiplexer of a given size is needed in a system, this circuit family offers to the designer a set of alternative demultiplexer circuit designs, in which increasing voltage margins can be achieved, but at the cost of increasing circuit area. We analyse a demultiplexer circuit based on an arbitrary linear code. For this general case, we give the encoding computation prescribed by the code, give the configuration pattern prescribed by the code for the crossbar part of the circuit, calculate the output voltage on each of the demux output lines as a function of the current input signal, calculate the worst-case voltage margin, and calculate cost parameters measuring the increased area consumed by the circuit. This code-based demultiplexer circuit design makes it possible to handle the voltage-margin problem of resistor logic, and thus makes it feasible to build relatively large demultiplexers using nano-scale crossbars with configurable resistors at the crossbar junctions.
Integrity signals
Registry
Cites
Statistics
Claims the paper makes
Cites
The Theory of Error-Correcting Codes
(1977) · North-Holland mathematical library · doi:10.1016/s0924-6509(08)x7030-8 · Cited by 10,875 · see citing works
Simmons, J. G. (1963) · Journal of Applied Physics · doi:10.1063/1.1702682 · Cited by 4,200 · see citing works
Large On-Off Ratios and Negative Differential Resistance in a Molecular Electronic Device
Chen, J., Reed, M. A., Rawlett, A. M., & Tour, J. M. (1999) · Science · doi:10.1126/science.286.5444.1550 · Cited by 2,407 · see citing works
Error Control Systems for Digital Communication and Storage
Wicker, S. B. (1995) · Medical Entomology and Zoology · Cited by 1,775 · see citing works
Electronically Configurable Molecular-Based Logic Gates
Collier, C. P., Wong, E. W., Bělohradský, M., Raymo, F. M., Stoddart, J. F., Kuekes, P. J., Williams, R. S., & Heath, J. R. (1999) · Science · doi:10.1126/science.285.5426.391 · Cited by 1,519 · see citing works
Self-citationThe theory of error-correcting codes
Massey, J. L. (1980) · Proceedings of the IEEE · doi:10.1109/proc.1980.11608 · Cited by 682 · see citing works
Nanoscale molecular-switch crossbar circuits
Chen, Y., Jung, G. Y., Ohlberg, D. A. A., Li, X., Stewart, D. R., Jeppesen, J. O., Nielsen, K. A., Stoddart, J. F., & Williams, R. S. (2003) · Nanotechnology · doi:10.1088/0957-4484/14/4/311 · Cited by 637 · see citing works
Self-citationNanowire Crossbar Arrays as Address Decoders for Integrated Nanosystems
Zhong, Z., Wang, D., Cui, Y., Bockrath, M., & Lieber, C. M. (2003) · Science · doi:10.1126/science.1090899 · Cited by 586 · see citing works
Two-Dimensional Molecular Electronics Circuits
Luo, Y., Collier, C. P., Jeppesen, J. O., Nielsen, K. A., DeIonno, E., Ho, G., Perkins, J., Tseng, H., Yamamoto, T., Stoddart, J. F., et al. (2002) · ChemPhysChem · doi:10.1002/1439-7641(20020617)3:6 · Cited by 558 · see citing works
Array-based architecture for FET-based, nanoscale electronics
DeHon, A. M. (2003) · IEEE Transactions on Nanotechnology · doi:10.1109/tnano.2003.808508 · Cited by 377 · see citing works
Nanoscale molecular-switch devices fabricated by imprint lithography
Chen, Y., Ohlberg, D. A. A., Li, X., Stewart, D. R., Williams, R. S., Jeppesen, J. O., Nielsen, K. A., Stoddart, J. F., Olynick, D. L., & Anderson, E. H. (2003) · Applied Physics Letters · doi:10.1063/1.1559439 · Cited by 279 · see citing works
Self-citationMinimum-distance bounds for binary linear codes
Helgert, H. J., & Stinaff, R. (1973) · IEEE Transactions on Information Theory · doi:10.1109/tit.1973.1055009 · Cited by 97 · see citing works
Kuekes, P. J., Robinett, W., Seroussi, G., & Williams, R. S. (2005) · Nanotechnology · doi:10.1088/0957-4484/16/6/043 · Cited by 75 · see citing works
Self-citationResistor-logic demultiplexers for nanoelectronics based on constant-weight codes
Kuekes, P. J., Robinett, W., Roth, R. M., Seroussi, G., Snider, G. S., & Williams, R. S. (2006) · Nanotechnology · doi:10.1088/0957-4484/17/4/035 · Cited by 40 · see citing works
Self-citationCrossbar Demultiplexers for Nanoelectronics Based on $n$ -Hot Codes
Snider, G. S., & Robinett, W. (2005) · IEEE Transactions on Nanotechnology · doi:10.1109/tnano.2004.837853 · Cited by 30 · see citing works
Self-citationDefect tolerance in resistor-logic demultiplexers for nanoelectronics
Kuekes, P. J., Robinett, W., & Williams, R. S. (2006) · Nanotechnology · doi:10.1088/0957-4484/17/10/006 · Cited by 15 · see citing works
Self-citationDefect-tolerant demultiplexers for nano-electronics constructed from error-correcting codes
Kuekes, P. J., Robinett, W., Seroussi, G., & Williams, R. S. (2005) · Applied Physics A · doi:10.1007/s00339-004-3164-2 · Cited by 11 · see citing works
Self-citationEffect of Conductance Variability on Resistor-Logic Demultiplexers for Nanoelectronics
Kuekes, P. J., Robinett, W., & Williams, R. S. (2006) · IEEE Transactions on Nanotechnology · doi:10.1109/tnano.2006.880405 · Cited by 10 · see citing works
Self-citation
Flagged first, then by citations
2 of the 20 references couldn’t be matched to a known paper.
Cited by
Sorted by citations
Nanoelectronics from the bottom up
Lu, W. D., & Lieber, C. M. (2007) · Nature Materials · doi:10.1038/nmat2028 · Cited by 1,547 · see citing works
Nanowire Transistor Performance Limits and Applications
Lu, W. D., Xie, P., & Lieber, C. M. (2008) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2008.2005158 · Cited by 369 · see citing works
Stochastic memristive devices for computing and neuromorphic applications
Gaba, S., Sheridan, P., Zhou, J., Choi, S., & Lu, W. (2013) · Nanoscale · doi:10.1039/c3nr01176c · Cited by 307 · see citing works
“for applications in deterministic storage and logic applications, feedback schemes that check the state of the 5 device after every write operation (19), or error-control coding and redundancy can be (20,21) employed. Alternatively, excess programming voltage and long pulse width can be used to ensure the correctness…”
BackgroundWriting to and reading from a nano-scale crossbar memory based on memristors
Vontobel, P. O., Robinett, W., Kuekes, P. J., Stewart, D. R., Straznicky, J., & Williams, R. S. (2009) · Nanotechnology · doi:10.1088/0957-4484/20/42/425204 · Cited by 261 · see citing works
Self-citationA Native Stochastic Computing Architecture Enabled by Memristors
Knag, P. C., Lu, W. D., & Zhang, Z. (2014) · IEEE Transactions on Nanotechnology · doi:10.1109/tnano.2014.2300342 · Cited by 107 · see citing works
Resistor-logic demultiplexers for nanoelectronics based on constant-weight codes
Kuekes, P. J., Robinett, W., Roth, R. M., Seroussi, G., Snider, G. S., & Williams, R. S. (2006) · Nanotechnology · doi:10.1088/0957-4484/17/4/035 · Cited by 40 · see citing works
Self-citationYan, X., Ma, J., Wu, T., Zhang, A., Wu, J., Chin, M. L., Zhang, Z., Dubey, M., Wu, W., Chen, M. S., et al. (2021) · Nature Communications · doi:10.1038/s41467-021-26012-5 · Cited by 36 · see citing works
Crossbar Demultiplexers for Nanoelectronics Based on $n$ -Hot Codes
Snider, G. S., & Robinett, W. (2005) · IEEE Transactions on Nanotechnology · doi:10.1109/tnano.2004.837853 · Cited by 30 · see citing works
Self-citationInformation capacity of nanowire crossbar switching networks
Sotiriadis, P. P. (2006) · IEEE Transactions on Information Theory · doi:10.1109/tit.2006.876347 · Cited by 29 · see citing works
Bozinovski, S., & Božinovski, A. (2015) · IEEE Transactions on Autonomous Mental Development · doi:10.1109/tamd.2014.2387271 · Cited by 22 · see citing works
Experimental demonstration of a defect-tolerant nanocrossbar demultiplexer
Li, Z., Pickett, M. D., Stewart, D. R., Ohlberg, D. A. A., Li, X., Wu, W., Robinett, W., & Williams, R. S. (2008) · Nanotechnology · doi:10.1088/0957-4484/19/16/165203 · Cited by 15 · see citing works
Self-citationDefect tolerance in resistor-logic demultiplexers for nanoelectronics
Kuekes, P. J., Robinett, W., & Williams, R. S. (2006) · Nanotechnology · doi:10.1088/0957-4484/17/10/006 · Cited by 15 · see citing works
Self-citationDemultiplexers for Nanoelectronics Constructed From Nonlinear Tunneling Resistors
Robinett, W., Snider, G. S., Stewart, D. R., Straznicky, J., & Williams, R. S. (2007) · IEEE Transactions on Nanotechnology · doi:10.1109/tnano.2007.893589 · Cited by 14 · see citing works
Self-citationEffect of Conductance Variability on Resistor-Logic Demultiplexers for Nanoelectronics
Kuekes, P. J., Robinett, W., & Williams, R. S. (2006) · IEEE Transactions on Nanotechnology · doi:10.1109/tnano.2006.880405 · Cited by 10 · see citing works
Self-citationDefect Tolerance Based on Coding and Series Replication in Transistor-Logic Demultiplexer Circuits
Robinett, W., Kuekes, P. J., & Williams, R. S. (2007) · IEEE Transactions on Circuits and Systems I Regular Papers · doi:10.1109/tcsi.2007.907865 · Cited by 9 · see citing works
Self-citationNanowire Addressing in the Face of Uncertainty
Rachlin, E., & Savage, J. E. (2006) · IEEE Computer Society Annual Symposium on VLSI · doi:10.1109/isvlsi.2006.66 · Cited by 7 · see citing works
Fabrication of Nanomaterials on Porous Anodic Alumina Template Using Various Techniques
Verma, N., Singh, K. C., & Jindal, J. (2015) · Cited by 6 · see citing works
Direct-write programming of nanoscale demultiplexer arrays
Stewart, D. R., Gibson, G. A., Jung, G. Y., Wu, W., Straznicky, J., Tong, W. M., Li, Z., & Williams, R. S. (2007) · Nanotechnology · doi:10.1088/0957-4484/18/41/415201 · Cited by 5 · see citing works
Self-citationIntegration of resistive switching devices in crossbar structures
Nauenheim, C., & Waser, R. M. (2010) · RWTH Publications (RWTH Aachen) · Cited by 5 · see citing works
Peper, F. (2011) · Springer eBooks · doi:10.1007/978-1-4614-1800-9_128 · Cited by 3 · see citing works
Defect-tolerant demultiplexer circuits based on threshold logic and coding
Roth, R. M., Robinett, W., Kuekes, P. J., & Williams, R. S. (2009) · Nanotechnology · doi:10.1088/0957-4484/20/13/135201 · Cited by 3 · see citing works
Self-citationPeper, F. (2009) · Springer eBooks · doi:10.1007/978-0-387-30440-3_347 · Cited by 3 · see citing works
Coker, A., & Taylor, V. (2007) · IEEE Conference on Nanotechnology (IEEE NANO) · doi:10.1109/nano.2007.4601327 · Cited by 2 · see citing works
Peper, F. (2018) · Springer eBooks · doi:10.1007/978-1-4939-6883-1_347 · Cited by 1 · see citing works
Performance analysis of fault-tolerant nanoelectronic memories
Coker, A. (2009) · OakTrust (Texas A&M University Libraries) · Cited by 1 · see citing works
Design and Characterization of Selectively Functionalized Nanoscale Electronic Devices
Skinner, K. (2019) · Carolina Digital Repository (University of North Carolina at Chapel Hill) · doi:10.17615/73tb-8z11
Coker, A., & Taylor, V. (2008) · IEEE Conference on Nanotechnology (IEEE NANO) · doi:10.1109/nano.2008.271
Nanoscale Data Storage Devices Capacity and Encoding Schemes
Sotiriadis, P. P. (2006) · International Conference on Nano-Networks (Nano-Net) · doi:10.1109/nanonet.2006.346229
Hardware Considerations for Signal Processing Systems: A Step Toward the Unconventional.
Knag, P. C. (2015) · Deep Blue (University of Michigan)
Peper, F. (2017) · Springer eBooks · doi:10.1007/978-3-642-27737-5_347-2
- Authors
- Kuekes, P. J., Robinett, W., & Williams, R. S.
- Affiliations
- Hewlett-Packard (United States) (US)
- Corresponding author
- Robinett, Warren
- ORCID
- Williams, R Stanley
- Venue
- Nanotechnology
- Publisher
- IOP Publishing
- Published
- 2005-06-29
- Volume
- 16
- Issue
- 9
- Pages
- 1419-1432
- ISSN
- 0957-4484 (ISSN-L)
- 1361-6528
- OpenAlex
- W2016379652
- Cited by
- 30
- References
- 20
- Citations by year
- 2021: 1 · 2019: 1 · 2018: 1 · 2017: 1 · 2015: 3 · 2014: 1 · 2013: 1
- FWCI
- 4.75
- Type
- journal article
- Language
- en
- Open access
- closed
- Locations
- Nanotechnology (publishedVersion)
- Funders
- Defense Advanced Research Projects Agency
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Advanced Memory and Neural Computing
- Physical Sciences › Engineering › Electrical and Electronic Engineering › VLSI and FPGA Design Techniques
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Low-power high-performance VLSI design
- Keywords
- demultiplexer, linear codes, voltage margin, nanoelectronics, minimum distance, digital circuit design
About these checks
Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.
Statistics and arithmetic are recomputed, not judged.
Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.
What counts as a claim ›How we measure confidence ›How we check this ›
Are you an author, or do you see a problem with this page? Request a review
