Resistor-logic demultiplexers for nanoelectronics based on constant-weight codes
Open accessAbstract
The voltage margin of a resistor-logic demultiplexer can be improved significantly by basing its connection pattern on a constant-weight code. Each distinct code determines a unique demultiplexer, and therefore a large family of circuits is defined. We consider using these demultiplexers for building nanoscale crossbar memories, and determine the voltage margin of the memory system based on a particular code. We determine a purely code-theoretic criterion for selecting codes that will yield memories with large voltage margins, which is to minimize the ratio of the maximum to the minimum Hamming distance between distinct codewords. For the specific example of a 64 × 64 crossbar, we discuss what codes provide optimal performance for a memory.
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- Authors
- Kuekes, P. J., Robinett, W., Roth, R. M., Seroussi, G., Snider, G. S., & Williams, R. S.
- Affiliations
- Hewlett-Packard (United States) (US)
- Technion – Israel Institute of Technology (IL)
- Mathematical Sciences Research Institute (US)
- Venue
- Nanotechnology
- Publisher
- IOP Publishing
- Published
- 2006-01-30
- Volume
- 17
- Issue
- 4
- Pages
- 1052-1061
- ISSN
- 0957-4484 (ISSN-L)
- 1361-6528
- OpenAlex
- W1989175497
- Cited by
- 40
- References
- 13
- Citations by year
- 2023: 1 · 2021: 2 · 2020: 1 · 2018: 1 · 2017: 2 · 2016: 2 · 2015: 2 · 2014: 2 · 2013: 2 · 2012: 1
- FWCI
- 6.07
- Type
- journal article
- Language
- en
- Open access
- bronze
- doi.org
- Locations
- Nanotechnology (publishedVersion)
- PubMed (publishedVersion)
- Funders
- Defense Advanced Research Projects Agency
- Advanced Research Projects Agency
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Advanced Memory and Neural Computing
- Physical Sciences › Computer Science › Artificial Intelligence › Coding theory and cryptography
- Physical Sciences › Computer Science › Computational Theory and Mathematics › Quantum-Dot Cellular Automata
- Keywords
- constant weight codes, nanoelectronics, crossbar memory, voltage margin, Hamming distance, nanoscale memory
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