The DOI matches its Crossref record; 31 of the 31 references it cites were found in a registry or an index.
Density-functional calculation of sub-band structure in accumulation and inversion layers
Abstract
The Hohenberg-Kohn-Sham theory of an inhomogeneous electron gas is applied to the calculation of the subband structure of accumulation and inversion layers on the Si (100) surface. The exchange-correlation effect is shown to be very important and lower the sub-band energies considerably. Especially in accumulation layers the first excited sub-band really becomes a bound state in contrast to the result of the Hartree approximation. The agreement between the theory and experimental results of inter-sub-band optical transitions is satisfactory. The effective mass and the $g$ factor are also calculated.
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Citations
Cites
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Self-citationCalculated Energy Levels and Optical Absorption in n -Type Si Accumulation Layers at Low Temperature
Stern, F. (1974) · Physical Review Letters · doi:10.1103/physrevlett.33.960 · Cited by 68
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Cited by
Electronic properties of two-dimensional systems
Ando, T., Fowler, A. B., & Stern, F. (1982) · Reviews of Modern Physics · doi:10.1103/revmodphys.54.437 · Cited by 7,455
Self-citationOn the absorption of infrared radiation by electrons in semiconductor inversion layers
Allen, S. J., Tsui, D. C., & Vinter, B. (1976) · Solid State Communications · doi:10.1016/0038-1098(76)90541-x · Cited by 301
Electronic Structure: Basic Theory and Practical Methods
Martin, R. M. (2020) · Cambridge University Press eBooks · doi:10.1017/9781108555586 · Cited by 269
Metadata
- Authors
- Ando, T.
- Venue
- Physical Review B
- Publisher
- American Physical Society (APS)
- Published
- 1976-04-15
- Volume
- 13
- Issue
- 8
- Pages
- 3468-3477
- ISSN
- 0556-2805 (ISSN-L)
- OpenAlex
- W1977389106
- Cited by
- 269
- References
- 31
- FWCI
- 16.42
- Type
- journal article
- Language
- en
- Open access
- closed
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