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Cited by 769

The DOI matches its Crossref record; 14 of the 14 references it cites were found in a registry or an index.

Optical dispersion relations for amorphous semiconductors and amorphous dielectrics

Forouhi, A. R., Bloomer, I.·1986·Physical Review B
DOI 10.1103/physrevb.34.7018
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Abstract

An expression for the imaginary part, k, of the complex index of refraction, N=n-ik, for amorphous materials is derived as a function of photon energy E: k(E)=A(E-${E}_{g}$${)}^{2}$/(${E}^{2}$-BE+C) where A, B, and C are positive nonzero constants characteristic of the medium such that 4C-${B}^{2}$>0. ${E}_{g}$ represents the optical energy band gap. The real part, n, of the complex index of refraction is then determined to be n(E)=n(\ensuremath{\infty})+(${B}_{0}$E+${C}_{0}$)/ (${E}^{2}$-BE+C) using Kramers-Kronig analysis, where ${B}_{0}$ and ${C}_{0}$ are constants that depend on A, B, C, and ${E}_{g}$, and n(\ensuremath{\infty}) is a constant greater than unity. Excellent agreement was found between these formulas and experimentally measured and published values of n and k of amorphous silicon, hydrogenated amorphous silicon, amorphous silicon nitride, and titanium dioxide.

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Metadata

Authors
Forouhi, A. R., & Bloomer, I.
Venue
Physical Review B
Publisher
American Physical Society (APS)
Published
1986-11-15
Volume
34
Issue
10
Pages
7018-7026
ISSN
0163-1829 (ISSN-L)
DOI
10.1103/physrevb.34.7018
OpenAlex
W2001848482
Cited by
769
References
14
FWCI
1.77
Type
journal article
Language
en
Open access
closed

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