The DOI matches its Crossref record; 7 of the 7 references it cites were found in a registry or an index.
Native defects in gallium nitride
Abstract
The results of an extensive theoretical study of native defects in hexagonal GaN are presented. We have considered cation and anion vacancies, antisites, and interstitials. The computations were carried out using ab initio molecular dynamics in supercells containing 72 atoms. N vacancy introduces a shallow donor level, and may be responsible for the n-type character of as-grown GaN. Due to the wide gap of nitrides, self-compensation effects strongly reduce both n-type and p-type doping efficiencies due to the formation of gallium vacancy and interstitial Ga, respectively.
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Cites
Pseudopotentials that work: From H to Pu
Bachelet, G. B., Hamann, D. R., & Schlüter, M. (1982) · Physical Review B · doi:10.1103/physrevb.26.4199 · Cited by 3,385
Strite, S., & Morkoç, H. (1992) · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · doi:10.1116/1.585897 · Cited by 2,883
Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologies
Morkoç, H., Strite, S., Gao, G. B., Lin, M. E., Sverdlov, B., & Burns, M. (1994) · Journal of Applied Physics · doi:10.1063/1.358463 · Cited by 2,733
Chemical potential dependence of defect formation energies in GaAs: Application to Ga self-diffusion
Zhang, S., & Northrup, J. (1991) · Physical Review Letters · doi:10.1103/physrevlett.67.2339 · Cited by 1,791
THE PREPARATION AND PROPERTIES OF VAPOR-DEPOSITED SINGLE-CRYSTAL-LINE GaN
Maruska, H. P., & Tietjen, J. J. (1969) · Applied Physics Letters · doi:10.1063/1.1652845 · Cited by 1,350
Analysis of separable potentials
Gonze, X., Stumpf, R., & Scheffler, M. (1991) · Physical Review B · doi:10.1103/physrevb.44.8503 · Cited by 605
Thin films and devices of diamond, silicon carbide and gallium nitride
Davis, R. F. (1993) · Physica B Condensed Matter · doi:10.1016/0921-4526(93)90210-w · Cited by 139
Cited by
Fabrication and performance of GaN electronic devices
Pearton, S. J., Ren, F., Zhang, A. P., & Lee, K. P. (2000) · Materials Science and Engineering: R: Reports · doi:10.1016/s0927-796x(00)00028-0 · Cited by 507
Computationally predicted energies and properties of defects in GaN
Lyons, J. L., & Van de Walle, C. G. (2017) · npj Computational Materials · doi:10.1038/s41524-017-0014-2 · Cited by 312
Metadata
- Authors
- Bogusl/awski, P., Briggs, E. L., & Bernholc, J.
- Venue
- Physical Review B
- Publisher
- American Physical Society (APS)
- Published
- 1995-06-15
- Volume
- 51
- Issue
- 23
- Pages
- 17255-17258
- ISSN
- 0163-1829 (ISSN-L)
- 1095-3795
- OpenAlex
- W1974463941
- Cited by
- 469
- References
- 7
- FWCI
- 13.54
- Type
- journal article
- Language
- en
- Open access
- closed
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- Bogusl/awski, P., Briggs, E. L., & Bernholc, J. (1995). Native defects in gallium nitride. Physical Review B. https://doi.org/10.1103/physrevb.51.17255
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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
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