The DOI matches its Crossref record; 17 of the 17 references it cites were found in a registry or an index.
Point-defect complexes and broadband luminescence in GaN and AlN
Open accessAbstract
We have employed the plane-wave pseudopotential method to study point defect complexes in GaN and AlN. The results reveal that defect complexes consisting of dominant donors bound to cation vacancies are likely to be formed in both materials. The position of the electronic levels in the band gap due to these defect complexes is shown to correlate well with the experimentally commonly observed broadband luminescence both in GaN and in AlN. The origin of the large bandwidth of the luminescence spectrum is discussed.
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Citations
Cites
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Cited by
First-principles calculations for defects and impurities: Applications to III-nitrides
Van de Walle, C. G., & Neugebauer, J. (2004) · Journal of Applied Physics · doi:10.1063/1.1682673 · Cited by 3,257
Computationally predicted energies and properties of defects in GaN
Lyons, J. L., & Van de Walle, C. G. (2017) · npj Computational Materials · doi:10.1038/s41524-017-0014-2 · Cited by 312
Theoretical investigation of native defects, impurities, and complexes in aluminum nitride
Stampfl, C., & Van de Walle, C. G. (2002) · Physical Review B · doi:10.1103/physrevb.65.155212 · Cited by 276
Metadata
- Authors
- Mattila, T., & Nieminen, R. M.
- Venue
- Physical Review B
- Publisher
- American Physical Society (APS)
- Published
- 1997-04-15
- Volume
- 55
- Issue
- 15
- Pages
- 9571-9576
- ISSN
- 0163-1829 (ISSN-L)
- 1095-3795
- OpenAlex
- W2047471022
- Cited by
- 454
- References
- 17
- FWCI
- 14.18
- Type
- journal article
- Language
- en
- Open access
- bronze
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