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Cited by 419

The DOI matches its Crossref record; 8 of the 8 references it cites were found in a registry or an index.

Macroscopic polarization and band offsets at nitride heterojunctions

Open access
Bernardini, Fabio, Fiorentini, Vincenzo·1998·Physical Review B
DOI 10.1103/physrevb.57.r9427
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Abstract

Ab initio electronic structure studies of prototypical polar interfaces of wurtzite III-V nitrides show that large uniform electric fields exist in epitaxial nitride overlayers, due to the discontinuity across the interface of the macroscopic polarization of the constituent materials. Polarization fields require a nonstandard evaluation of band offsets and formation energies: we find a large strain-induced asymmetry of the offset [0.2 eV for AlN/GaN (0001), 0.85 eV for GaN/AlN (0001)], and tiny interface formation energies.

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Metadata

Authors
Bernardini, F., & Fiorentini, V.
Venue
Physical Review B
Publisher
American Physical Society (APS)
Published
1998-04-15
Volume
57
Issue
16
Pages
R9427-R9430
ISSN
  • 0163-1829 (ISSN-L)
  • 1095-3795
DOI
10.1103/physrevb.57.r9427
OpenAlex
W2048134097
Cited by
419
References
8
FWCI
18.99
Type
journal article
Language
en
Open access
green

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CoChat. (2026). Citation check: Macroscopic polarization and band offsets at nitride heterojunctions. https://app.cochat.ai/papers/10.1103/physrevb.57.r9427
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Bernardini, F., & Fiorentini, V. (1998). Macroscopic polarization and band offsets at nitride heterojunctions. Physical Review B. https://doi.org/10.1103/physrevb.57.r9427

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Bibliographic data: Semantic Scholar, OpenAlex, Crossref.

Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).

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