The DOI matches its Crossref record; 57 of the 57 references it cites were found in a registry or an index.
Strain engineering of the silicon-vacancy center in diamond
Open accessAbstract
Here, the authors tune the color of light emitted by single-atom imperfections (silicon vacancy color centers) inside a diamond. Such tunable imperfections can be networked together to build a quantum internet, where information can be securely exchanged using the laws of quantum physics. One problem is that all the centers need to emit at precisely the same color or wavelength. The authors overcome this challenge by placing color centers inside a diamond nanostring. By adjusting the tension in the string, atoms are stretched inside the crystal and tune the center to emit photons of a desired wavelength. The tuning method involves bending the string with a force controlled handily with an electrical voltage. A symphony of such tunable diamond strings could serve as the backbone of a future quantum internet.
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Cites
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Cited by
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Bhaskar, M. K., Riedinger, R., Machielse, B., Levonian, D. S., Nguyen, C. T., Knall, E. N., Park, H., Englund, D., Lončar, M., Sukachev, D. D., et al. (2020) · Nature · doi:10.1038/s41586-020-2103-5 · Cited by 587
Self-citationLarge-scale integration of artificial atoms in hybrid photonic circuits
Wan, N. H., Lu, T.-J., Chen, K. C., Walsh, M. P., Trusheim, M. E., De Santis, L., Bersin, E. A., Harris, I. B., Mouradian, S. L., Christen, I. R., et al. (2020) · Nature · doi:10.1038/s41586-020-2441-3 · Cited by 406
Self-citationPhoton-mediated interactions between quantum emitters in a diamond nanocavity
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Self-citationIntegrated photonic devices in single crystal diamond
Mi, S., Kiss, M., Graziosi, T., & Quack, N. (2020) · Journal of Physics: Photonics · doi:10.1088/2515-7647/aba171 · Cited by 53
Metadata
- Authors
- Meesala, S., Sohn, Y.-I., Pingault, B., Shao, L., Atikian, H. A., Holzgrafe, J., Gündoğan, M., Stavrakas, C., Sipahigil, A., Chia, C., Evans, R., Burek, M. J., Zhang, M., Wu, L., Pacheco, J. L., Abraham, J., Bielejec, E., Lukin, M. D., Atatüre, M., & Lončar, M.
- Venue
- Physical Review B
- Publisher
- American Physical Society (APS)
- Published
- 2018-05-29
- Volume
- 97
- Issue
- 20
- ISSN
- 2469-9950 (ISSN-L)
- 2469-9969
- OpenAlex
- W2787382531
- Cited by
- 285
- References
- 57
- FWCI
- 10.03
- Type
- journal article
- Language
- en
- Open access
- bronze
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- Meesala, S., Sohn, Y.-I., Pingault, B., Shao, L., Atikian, H. A., Holzgrafe, J., Gündoğan, M., Stavrakas, C., Sipahigil, A., Chia, C., Evans, R., Burek, M. J., Zhang, M., Wu, L., Pacheco, J. L., Abraham, J., Bielejec, E., Lukin, M. D., Atatüre, M., & Lončar, M. (2018). Strain engineering of the silicon-vacancy center in diamond. Physical Review B. https://doi.org/10.1103/physrevb.97.205444
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