EUV-induced hydrogen desorption as a step towards large-scale silicon quantum device patterning
Open accessAbstract
Atomically precise hydrogen desorption lithography using scanning tunnelling microscopy (STM) has enabled the development of single-atom, quantum-electronic devices on a laboratory scale. Scaling up this technology to mass-produce these devices requires bridging the gap between the precision of STM and the processes used in next-generation semiconductor manufacturing. Here, we demonstrate the ability to remove hydrogen from a monohydride Si(001):H surface using extreme ultraviolet (EUV) light. We quantify the desorption characteristics using various techniques, including STM, X-ray photoelectron spectroscopy (XPS), and photoemission electron microscopy (XPEEM). Our results show that desorption is induced by secondary electrons from valence band excitations, consistent with an exactly solvable non-linear differential equation and compatible with the current 13.5 nm (~92 eV) EUV standard for photolithography; the data imply useful exposure times of order minutes for the 300 W sources characteristic of EUV infrastructure. This is an important step towards the EUV patterning of silicon surfaces without traditional resists, by offering the possibility for parallel processing in the fabrication of classical and quantum devices through deterministic doping.
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DSA can improve the roughness and resolution of developed EUV resist patterns and fundamentally improve random or systematic variability in the patterned films.
“DSA can improve the roughness and resolution of developed EUV resist patterns and fundamentally improve random or systematic variability in the patterned films 126,127 .”
From Extreme ultraviolet lithography (2024) · cites this paper as [127]
The Abstract and the 'Towards large-scale EUV patterning of silicon quantum devices' section describe resistless EUV-induced hydrogen desorption, not directed self-assembly (DSA) of developed resist patterns. The Introduction mentions pattern-edge roughness in a different UV hydrogen-desorption method, but does not address DSA improving roughness, resolution, or variability. Searches for DSA and patterned-film variability found no supporting passage in our copy; page numbers were not provided. (LLM, conf=0.76)
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Extreme ultraviolet lithography
Kazazis, D., Santaclara, J. G., van Schoot, J., Mochi, I., & Ekinci, Y. (2024) · Nature Reviews Methods Primers · doi:10.1038/s43586-024-00361-z · Cited by 149 · see citing works
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- Authors
- Constantinou, P., Stock, T. J. Z., Tseng, L.-T., Kazazis, D., Muntwiler, M., Vaz, C. A. F., Ekinci, Y., Aeppli, G., Curson, N. J., & Schofield, S. R.
- Affiliations
- London Centre for Nanotechnology (GB)
- Paul Scherrer Institute (CH)
- Corresponding author
- Constantinou, Procopios
- Schofield, Steven R.
- ORCID
- Venue
- Nature Communications
- Published
- 2024-01-24
- Volume
- 15
- Issue
- 1
- Pages
- 694-694
- ISSN
- 2041-1723 (ISSN-L)
- PMC
- PMC10808421
- OpenAlex
- W4391170596
- Cited by
- 27
- References
- 69
- Citations by year
- 2026: 2 · 2025: 14 · 2024: 11
- FWCI
- 2.79
- Type
- journal article
- Language
- en
- Open access
- gold
- doi.org
- Locations
- Nature Communications (publishedVersion, cc-by)
- PubMed Central (publishedVersion, cc-by)
- PubMed (publishedVersion)
- DORA PSI (Paul Scherrer Institute) (submittedVersion, cc-by)
- UCL Discovery (University College London) (submittedVersion, cc-by)
- Infoscience (Ecole Polytechnique Fédérale de Lausanne) (submittedVersion, cc-by-nc-nd)
- RePEc: Research Papers in Economics (submittedVersion)
- DOAJ (DOAJ: Directory of Open Access Journals) (submittedVersion, cc-by-sa)
- Repository for Publications and Research Data (ETH Zurich) (submittedVersion, cc-by)
- ETH Zürich Research Collection
- Funders
- RCUK | Engineering and Physical Sciences Research Council (EP/M009564/1, EP/L015277/1)
- EC | Horizon 2020 Framework Programme (810451)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Advancements in Photolithography Techniques
- Physical Sciences › Engineering › Biomedical Engineering › Nanofabrication and Lithography Techniques
- Physical Sciences › Physics and Astronomy › Atomic and Molecular Physics, and Optics › Surface and Thin Film Phenomena
- Keywords
- hydrogen desorption, EUV lithography, silicon monohydride, Si(100) surface, secondary electron emission, resist-free patterning, parallel computing, quantum electronics
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