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Nonvolatile Memory with Multilevel Switching: A Basic Model
Abstract
There is a current upsurge in research on nonvolatile two-terminal resistance random access memory (RRAM) for next generation electronic applications. The RRAM is composed of a simple sandwich of a semiconductor with two metal electrodes. We introduce here an initial model for RRAM with the assumption that the semiconducting part has a nonpercolating domain structure. We solve the model using numerical simulations and the basic carrier transfer mechanism is unveiled in detail. Our model captures three key features observed in experiments: multilevel switchability of the resistance, its memory retention, and hysteretic behavior in the current-voltage curve.
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Cited by
Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges
Waser, R., Dittmann, R., Staikov, G., & Szot, K. (2009) · Advanced Materials · doi:10.1002/adma.200900375 · Cited by 5,080
Nanoionics-based resistive switching memories
Waser, R., & Aono, M. (2007) · Nature Materials · doi:10.1038/nmat2023 · Cited by 4,923
Memristive switching mechanism for metal/oxide/metal nanodevices
Yang, J. J., Pickett, M. D., Li, X., Ohlberg, D. A. A., Stewart, D. R., & Williams, R. S. (2008) · Nature Nanotechnology · doi:10.1038/nnano.2008.160 · Cited by 2,987
Floquet Engineering of Quantum Materials
Oka, T., & Kitamura, S. (2019) · Annual Review of Condensed Matter Physics · doi:10.1146/annurev-conmatphys-031218-013423 · Cited by 999
Memory effects in complex materials and nanoscale systems
Pershin, Y. V., & Di Ventra, M. (2011) · Advances In Physics · doi:10.1080/00018732.2010.544961 · Cited by 823
Metadata
- Authors
- Rozenberg, M. J., Inoue, I. H., & Sánchez, M. J.
- Venue
- Physical Review Letters
- Publisher
- American Physical Society (APS)
- Published
- 2004-04-30
- Volume
- 92
- Issue
- 17
- Pages
- 178302-178302
- ISSN
- 0031-9007 (ISSN-L)
- 1079-7114
- OpenAlex
- W2007070351
- Cited by
- 571
- References
- 0
- FWCI
- 31.72
- Type
- journal article
- Language
- en
- Open access
- closed
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- Rozenberg, M. J., Inoue, I. H., & Sánchez, M. J. (2004). Nonvolatile Memory with Multilevel Switching: A Basic Model. Physical Review Letters. https://doi.org/10.1103/physrevlett.92.178302
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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
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