The DOI matches its Crossref record; 14 of the 14 references it cites were found in a registry or an index; none of the 8 sources its claims cite is checked for support yet.
Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect
Open accessAbstract
We demonstrate that the electronic gap of a graphene bilayer can be controlled externally by applying a gate bias. From the magnetotransport data (Shubnikov-de Haas measurements of the cyclotron mass), and using a tight-binding model, we extract the value of the gap as a function of the electronic density. We show that the gap can be changed from zero to midinfrared energies by using fields of less, approximately < 1 V/nm, below the electric breakdown of SiO2. The opening of a gap is clearly seen in the quantum Hall regime.
Overview
AI snapshot
Written from the paper’s full text.
TL;DR
The paper reports that bilayer graphene can be converted into a semiconductor whose band gap is externally tunable by gate bias, with the gap ranging from zero to mid-infrared energies. Magnetotransport measurements and tight-binding modeling show clear gap signatures, including a zero Hall conductivity plateau and an asymmetric cyclotron mass.
Key findings
- In biased bilayer graphene, a plateau at zero Hall conductivity appears at the neutrality point, unlike the pristine case; the longitudinal resistivity at neutrality exceeded 150 kΩ at 4 K for the biased device, compared with 6 kΩ for the unbiased device under the same conditions.
- The cyclotron mass depends asymmetrically on carrier density, and comparison with tight-binding theory yields an interlayer hopping parameter of 0.22 eV and indicates gaps larger than 0.2 eV.
- A small-bias linear fit to the screened theory gives a gap of about 1.2 meV per volt relative to a gate voltage of 25 V, while the theory predicts gap saturation at the interlayer hopping scale.
- The model agrees well with angle-resolved photoemission data, except in the gap saturation regime around densities of about 50 × 10¹² cm⁻².
Methods
- Bilayer graphene devices were prepared by micromechanical cleavage on 300 nm SiO₂ and patterned into Hall bars; carrier density was controlled by a Si backgate and by NH₃ chemical doping, with transport measured by lock-in techniques in fields up to 12 T and temperatures from 4 to 300 K.
- Shubnikov–de Haas oscillations were measured versus temperature and fitted to extract the cyclotron mass as a function of carrier density.
- The data were interpreted with a Bernal-stacked bilayer tight-binding model using in-plane hopping of 3.1 eV and interlayer hopping of 0.22 eV, including a self-consistent Hartree treatment of screening; Hall conductivity was modeled for a zigzag-edged ribbon in a magnetic field.
Limitations
- The paper states that the Hartree approach is reliable only when the gap is small compared with the interlayer hopping; for hole doping it underestimates the cyclotron mass while the unscreened model overestimates it, so the true gap lies between these limits and a better screening treatment is needed when the electrostatic energy becomes comparable to the interlayer hopping.
- The paper notes that the comparison with angle-resolved photoemission data works well except in the gap saturation regime at high density.
- Evident from the text: for the transport devices, the gap values are inferred by fitting a tight-binding/Hartree model to magnetotransport rather than measured directly by a spectroscopic probe.
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Claims the paper makes
19 Own result · 18 Own interpretation · 8 Sources not found · 4 No basis given
A result the paper reports from its own data — it cites no other source for it, so there is none to check. The quote shows it is in the paper.
In the paper
“The opening of a gap is clearly seen in the quantum Hall regime.”
§ Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect > Abstract
boosted- Asserted: passes — The authors put it forward as true.
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In the paper
“which is absent in the unbiased case”
§ Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect > Abstract
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In the paper
“by comparing the observed behavior with our tightbinding results, we show that the gap can be tuned to values larger than 0.2 eV”
§ Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect > Abstract
plaindirect- Asserted: passes — The authors put it forward as true.
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In the paper
“in the biased device, xx at n 0 exceeded 150 kOhm at 4 K, as compared to 6 kOhm for the unbiased case under the same conditions”
§ Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect > Abstract
plaincorrelational- Asserted: passes — The authors put it forward as true.
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In the paper
“in a magnetic field, a pronounced plateau at zero Hall conductivity xy 0 is found for the biased bilayer”
§ Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect > Abstract
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In the paper
“the cyclotron mass, m c , in the bilayer biased by chemical doping is an asymmetric function of carrier density, n”
§ Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect > Abstract
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In the paper
“The linear increase of m c with jnj and the pronounced asymmetry between hole-and electron-doping of the biased bilayer are clearly seen here.”
§ Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect > Abstract
boosteddirect- Asserted: passes — The authors put it forward as true.
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In the paper
“We show that the gap can be changed from zero to midinfrared energies by using fields of & 1 V=nm, below the electric breakdown of SiO 2 .”
§ Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect > Abstract
plaindirect- Asserted: passes — The authors put it forward as true.
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- Rests on an assumption: The breakdown field for SiO2 is 1 V/nm (i.e., 300 V for the used oxide thickness).
A result the paper reports from its own data — it cites no other source for it, so there is none to check. The quote shows it is in the paper.
In the paper
“The linear increase of m c with jnj and the pronounced asymmetry between hole-and electron-doping of the biased bilayer are clearly seen here.”
§ Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect > Abstract
boostedcorrelational- Asserted: passes — The authors put it forward as true.
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In the paper
“The energy gap is revealed by the appearance of the N 0 plateau at xy 0 [see the curve labeled ''doped'' in Fig. 1(a)].”
§ Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect > Abstract
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- It may state two separate claims as one. 10
- The quote only partly states this claim. 2
- Probably not a substantial claim. 1
In the paper
“The N 0 plateau is strikingly absent, so that a double step of 8e 2 =h in height occurs at n 0, indicating a metallic state at the neutrality point [3].”
§ Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect > Abstract
What the sources say
- Not matchedcites [3] 3. K. S. Novoselov et al., Nature Phys. 2, 177 (2006).
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
hedgeddirect- Asserted: passes — The authors put it forward as true.
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In the paper
“In this case two flat bands with energies ÿeV=2 and eV=2 appear, similar to the case of zero magnetic field.The other two zero energy bands become dispersive inside the gap, showing the band-crossing phenomenon.”
§ Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect > Abstract
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In the paper
“In the hole doping region in Fig. 1(b), the Hartree approach underestimates the value of m c whereas the simple unscreened result overestimates it.”
§ Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect > Abstract
plaincorrelational- Asserted: passes — The authors put it forward as true.
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In the paper
“The emerged plateau was accompanied by a huge peak in longitudinal resistivity xx , indicating an insulating state”
§ Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect > Abstract
hedgedcorrelational- Asserted: passes — The authors put it forward as true.
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In the paper
“which provides a clear signature of a gap and allows its estimate”
§ Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect > Abstract
boostedcorrelational- Asserted: passes — The authors put it forward as true.
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In the paper
“we have cross-checked our theory against angle-resolved photoemission spectroscopy (ARPES) data [8] and found excellent agreement.”
§ Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect > Abstract
What the sources say
- Not matchedcites [8] 8. Theory of the gap opening within the continuum model was previously given by E. McCann, Phys. Rev. B 74, 161403 (2006).
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
plaincorrelational- Asserted: passes — The authors put it forward as true.
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A conclusion the paper draws from its own results — it cites no other source for it, so there is none to check. The quote shows it is in the paper.
In the paper
“Zero potential difference and zero gap are expected at n 2n 0 in both unscreened and screened cases, as seen from Eqs. (1) and ( 2) and the fact that nn; 0 0.”
§ Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect > Abstract
plain- Asserted: passes — The authors put it forward as true.
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It may state two separate claims as one.
- The authors state this as an assumption: The charge in layers 1 and 2 of the bilayer is equal to -ne/2.
A conclusion the paper draws from its own results — it cites no other source for it, so there is none to check. The quote shows it is in the paper.
In the paper
“Note that at the zero Hall plateau the current carried around the ribbon loop is zero, I 0, which implies, from the theory view point, a diverging longitudinal resistivity at low T”
§ Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect > Abstract
plaindirect- Asserted: passes — The authors put it forward as true.
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In the paper
“This opens a gap of eV in size.”
§ Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect > Abstract
plaindirect- Asserted: passes — The authors put it forward as true.
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In the paper
“At this particular density the gap closes and the theoretical value becomes independent of the screening assumptions.”
§ Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect > Abstract
plaindirect- Asserted: passes — The authors put it forward as true.
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It may state two separate claims as one. The quote only partly states this claim.
A conclusion the paper draws from its own results — it cites no other source for it, so there is none to check. The quote shows it is in the paper.
In the paper
“a more accurate treatment of screening is needed when eV becomes of the order of t ? .”
§ Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect > Abstract
plain- Asserted: passes — The authors put it forward as true.
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Probably not a substantial claim. The paper’s conclusions may not depend on it.
In the paper
“The coefficient 7:2 10 10 cm ÿ2 =V is determined by the geometry of the resulting capacitor and is in agreement with the values of n 1 found experimentally [1][2][3].”
§ Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect > Abstract
What the sources say
- Not matchedcites [1][2][3]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
plaindirect- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: unclear — It is unclear whether the paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
It may state two separate claims as one.
- Not matched
The authors state this as an assumption.
The charge in layers 1 and 2 of the bilayer is equal to -ne/2.
“Assuming equal charge ÿne=2 in layers 1 and 2 of the bilayer”
The paper relies on this without support.
The breakdown field for SiO2 is 1 V/nm (i.e., 300 V for the used oxide thickness).
“Note that the breakdown field for SiO 2 is 1 V=nm (i.e., 300 V for the used oxide thickness)”
The authors state this as an assumption.
The electric field induced between the two layers can be considered as a result of the effect of charged surfaces placed above and below bilayer graphene.
“The electric field induced between the two layers can be considered as a result of the effect of charged surfaces placed above and below bilayer graphene .”
Self-check
Percentages, sums and reported differences re-computed from the paper’s own numbers.
Each contradiction between two passages listed here was confirmed by an independent check.
Rated minor: it would not touch a result — a value no result rests on, a p-value that stays on the same side of the significance level, or a conflict that is clerical, resolved elsewhere in the paper, or outside its own findings.
In the paper
§ Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect > Abstract
“As pointed out by Laughlin [14], changing the magnetic flux through the ribbon loop by a flux quantum causes the states to move rigidly towards one edge.”
§ Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect > References
“14. The unbiased case, in the continuum approximation, was studied in Ref. [5]. 15. R. B. Laughlin, Phys. Rev. B 23, 5632 (1981).”
Citations
Cites
Electric Field Effect in Atomically Thin Carbon Films
Novoselov, K. S., Geim, A. K., Morozov, S. V., Jiang, D., Zhang, Y., Dubonos, S. V., Grigorieva, I. V., & Firsov, A. A. (2004) · Science · doi:10.1126/science.1102896 · Cited by 66,834
Self-citationGeim, A. K., & Novoselov, K. S. (2007) · Nature Materials · doi:10.1038/nmat1849 · Cited by 39,979
Self-citationTwo-dimensional gas of massless Dirac fermions in graphene
Novoselov, K. S., Geim, A. K., Morozov, S. V., Jiang, D., Katsnelson, M. I., Grigorieva, I. V., Dubonos, S. V., & Firsov, A. A. (2005) · Nature · doi:10.1038/nature04233 · Cited by 21,611
Self-citationExperimental observation of the quantum Hall effect and Berry's phase in graphene
Zhang, Y., Tan, Y.-W., Stormer, H. L., & Kim, P. (2005) · Nature · doi:10.1038/nature04235 · Cited by 13,435
Detection of individual gas molecules adsorbed on graphene
Schedin, F., Geim, A. K., Morozov, S. V., Hill, E. W., Blake, P., Katsnelson, M. I., & Novoselov, K. S. (2007) · Nature Materials · doi:10.1038/nmat1967 · Cited by 8,028
Self-citationControlling the Electronic Structure of Bilayer Graphene
Ohta, T., Bostwick, A., Seyller, T. K., Horn, K., & Rotenberg, E. (2006) · Science · doi:10.1126/science.1130681 · Cited by 3,346
Halperin, B. I. (1982) · Physical Review B · doi:10.1103/physrevb.25.2185 · Cited by 2,547
Quantized Hall conductivity in two dimensions
Laughlin, R. B. (1981) · Physical Review B · doi:10.1103/physrevb.23.5632 · Cited by 2,162
Landau-Level Degeneracy and Quantum Hall Effect in a Graphite Bilayer
McCann, E., & Fal’ko, V. I. (2006) · Physical Review Letters · doi:10.1103/physrevlett.96.086805 · Cited by 2,060
Unconventional quantum Hall effect and Berry’s phase of 2π in bilayer graphene
Novoselov, K. S., McCann, E., Morozov, S. V., Fal’ko, V. I., Katsnelson, M. I., Zeitler, U., Jiang, D., Schedin, F., & Geim, A. K. (2006) · Nature Physics · doi:10.1038/nphys245 · Cited by 1,967
Self-citation
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Fujimoto, Y., & Saito, S. (2018) · Japanese Journal of Applied Physics · doi:10.7567/1347-4065/aaf227 · Cited by 9
Wu, Y., Mu, Z., Luo, R.-B., et al. (2022) · Vacuum · doi:10.1016/j.vacuum.2022.111429 · Cited by 9
Spectral properties of excitons in the bilayer graphene
Apinyan, V., & Kopeć, T. K. (2017) · Physica E Low-dimensional Systems and Nanostructures · doi:10.1016/j.physe.2017.09.015 · Cited by 9
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Cosma, D. A., & Fal’ko, V. I. (2015) · Physical Review B · doi:10.1103/physrevb.92.165412 · Cited by 9
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Cresti, A., Carrete, J., Okuno, H., et al. (2020) · Carbon · doi:10.1016/j.carbon.2020.01.040 · Cited by 9
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“While the two layers of GNR should naturally be arranged in AB-a stacking (Bernal stacking) as shown in experimental studies [28], mismatch of these two layers may happen in”
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Diniz, G. S., Diniz, G. S., Martins, G. B., et al. (2020) · Physical review. B./Physical review. B · doi:10.1103/physrevb.101.125115 · Cited by 9
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“[6] Castro EV, Novoselov KS, Morozov SV, Peres NMR, dos Santos JMBL, Nilsson J, et al.”
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Yang, G., Zhang, Y., & Yan, X.-W. (2013) · Journal of Semiconductors · doi:10.1088/1674-4926/34/8/083004 · Cited by 8
Etched graphene single electron transistors on hexagonal boron nitride in high magnetic fields
Epping, A., Andersson‐Engels, S., Volk, C., et al. (2013) · RWTH Publications (RWTH Aachen) · Cited by 8
The Performance of Graphene-Enhanced THz Grating: Impact of the Gold Layer Imperfectness
Lamberti, P., Mura, M. L., Tucci, V., et al. (2022) · Materials · doi:10.3390/ma15030786 · Cited by 8
“Thereby, being easily tunable via applying any external forces (mechanical deformation [17], biasing [18], and laser irradiation [13]) and non-dispersive in a wide frequency range, i.”
BackgroundElectronic properties of zero-line modes in bilayer graphene: An ab initio study
Yan, Z. W., Hou, T., Han, Y., Xu, X., & Qiao, Z. (2022) · Physical review. B./Physical review. B · doi:10.1103/physrevb.105.035425 · Cited by 10
Half-metallicity in hole-doped nitrogenated honey graphene: A first-principles study
Zhu, J., Zhao, Y., Zeng, S., et al. (2017) · Physics Letters A · doi:10.1016/j.physleta.2017.01.050 · Cited by 8
Energetics and Scanning Tunneling Microscopy Images of B and N Defects in Graphene Bilayer
Fujimoto, Y., & Saito, S. (2016) · Springer proceedings in physics · doi:10.1007/978-3-319-46601-9_13 · Cited by 8
Gate-induced gap in bilayer graphene suppressed by Coulomb repulsion
Xu, J., Song, Z.-Y., Lin, H., & Zhang, Y. (2016) · Physical review. B./Physical review. B · doi:10.1103/physrevb.93.035109 · Cited by 8
Raman spectroscopy study of twisted tetralayer graphene
Wang, Y., Jiang, J., Gao, C., et al. (2016) · Journal of Raman Spectroscopy · doi:10.1002/jrs.4893 · Cited by 8
Iqbal, M. W., Razzaq, S., Noor, N. A., et al. (2022) · Journal of Materials Science Materials in Electronics · doi:10.1007/s10854-022-08199-5 · Cited by 8
Chegel, R. (2023) · Physica B Condensed Matter · doi:10.1016/j.physb.2023.415177 · Cited by 8
Reading and writing charge on graphene devices
Connolly, M. R., Herbschleb, E. D., Puddy, R. K., et al. (2012) · Applied Physics Letters · doi:10.1063/1.4732802 · Cited by 8
Derakhshan, V., & Cheraghchi, H. (2014) · Journal of Magnetism and Magnetic Materials · doi:10.1016/j.jmmm.2014.01.011 · Cited by 8
Longitudinal Magnetic Field Effects on Thermal Transport of Doped Bilayer Graphene
Rezania, H., & Abdi, M. (2018) · Journal of Superconductivity and Novel Magnetism · doi:10.1007/s10948-018-4675-y · Cited by 8
Graphene under the influence of Aharonov-Bohm flux and constant magnetic field
Stepanov, E. A., & Zhukovsky, V. C. (2016) · Physical review. B./Physical review. B · doi:10.1103/physrevb.94.094101 · Cited by 8
Bilayer Graphene: From Stacking Order to Growth Mechanisms
Guan, R., Yuan, A., & Luo, B. (2019) · physica status solidi (RRL) - Rapid Research Letters · doi:10.1002/pssr.201900605 · Cited by 8
Graphene—Technology and integration with semiconductor electronics
Srivastava, A., & Adesina, N. O. (2022) · Theoretical and computational chemistry · doi:10.1016/b978-0-12-819514-7.00006-3 · Cited by 8
Experimental signature of bandgap opening in bilayer graphene at metal contacts
Nouchi, R. (2014) · Applied Physics Letters · doi:10.1063/1.4903249 · Cited by 8
Performance comparison of ideal and defected bilayer graphene nanoribbon FETs
Shamloo, H., Faez, R., & Nazari, A. (2017) · Superlattices and Microstructures · doi:10.1016/j.spmi.2017.06.039 · Cited by 8
Sabashvili, A., Ostlund, S. S., & Granath, M. (2013) · Physical Review B · doi:10.1103/physrevb.88.085439 · Cited by 8
Electronic and Phonon Instabilities in Bilayer Graphene under Applied External Bias
Silva, D., Santos, M. C., Skelton, J. M., Yang, T., Santos, T., Parker, S. C., & Walsh, A. (2020) · Materials Today Proceedings · doi:10.1016/j.matpr.2019.10.076 · Cited by 8
Coulomb Excitations and Decays in Graphene-Related Systems
Lin, C., Wu, J.-Y., Chiu, C., & Lin, M.-F. (2019) · CRC Press eBooks · doi:10.1201/9780429277368 · Cited by 11
Ultrafast valley polarization in bilayer graphene
Kumar, P., Herath, T. M., & Apalkov, V. (2021) · Journal of Applied Physics · doi:10.1063/5.0060138 · Cited by 8
Gully quantum Hall ferromagnetism in biased trilayer graphene
Rao, P., & Serbyn, M. (2020) · Physical review. B./Physical review. B · doi:10.1103/physrevb.101.245411 · Cited by 8
Zhang, X., Li, D., Meng, J., et al. (2016) · Computational Materials Science · doi:10.1016/j.commatsci.2016.08.006 · Cited by 8
Stacking induced nonvolatile tuning of band gap in bilayer In2Se3
Ding, J., Wen, L., Chai, W., et al. (2021) · Applied Surface Science · doi:10.1016/j.apsusc.2021.150871 · Cited by 8
Ferromagnetic properties in low-doped zigzag graphene nanoribbons
Li, S., Tian, L., Shi, L., et al. (2016) · Journal of Physics Condensed Matter · doi:10.1088/0953-8984/28/8/086001 · Cited by 8
Intrinsic resistance peaks in AB-stacked multilayer graphene with odd number of layers
Nakasuga, T., Hirahara, T., Horii, K., Ebisuoka, R., Tajima, S., Watanabe, K., Taniguchi, T., & Yagi, R. (2020) · Physical review. B./Physical review. B · doi:10.1103/physrevb.101.035419 · Cited by 8
Shuai, Y., Rafique, M., Baloch, M. M., et al. (2020) · Chemical Physics · doi:10.1016/j.chemphys.2020.110828 · Cited by 8
Topologically protected gap states and resonances in gated trilayer graphene
Jaskólski, W., & Sarbicki, G. (2020) · Physical review. B./Physical review. B · doi:10.1103/physrevb.102.035424 · Cited by 8
Moiré-enabled topological superconductivity in twisted bilayer graphene
Khosravian, M., Bascones, E., & Lado, J. L. (2024) · 2D Materials · doi:10.1088/2053-1583/ad3b0c · Cited by 8
Zhang, J., Lang, X., & Jiang, Q. (2018) · Journal of Applied Physics · doi:10.1063/1.5075505 · Cited by 8
Ramli, Z. A. C., Pasupuleti, J., Samidin, S., et al. (2025) · Fuel · doi:10.1016/j.fuel.2025.136942 · Cited by 8
Electron–phonon and field effects on bernal bilayer graphene spin structure factors
Azizi, F., & Rezania, H. (2025) · The European Physical Journal Plus · doi:10.1140/epjp/s13360-025-06777-0 · Cited by 7
Electronic Transport Properties of Few-Layer Graphene Materials
Russo, S., Chi, M., Khodkov, T., Koshino, M., Yamamoto, M., & Taruch, S. (2011) · InTech eBooks · doi:10.5772/22530 · Cited by 7
“Respectively, pioneering charge transport experiments (Castro et al. (2007); Craciun et al. (2009); Oostinga et al. (2008)) followed by photoemission spectroscopy (Ohta et al. (2006)) and infrared spectroscopy (Mak et al. (2009); Zhang & Li et al. (2008); Zhang et al.”
BackgroundInfluentialSinha, P., Mondal, A., João, S. M., et al. (2024) · Physical review. B./Physical review. B · doi:10.1103/physrevb.109.155412 · Cited by 7
Thermodynamics of electrons in the graphene bilayer
Алисултанов, З. З. (2014) · Journal of Experimental and Theoretical Physics · doi:10.1134/s1063776114070012 · Cited by 7
Impurities and electronic localization in graphene bilayers
Collado, H. P. O., Usaj, G., & Balseiro, C. A. (2015) · Physical Review B · doi:10.1103/physrevb.91.045435 · Cited by 7
Structural, electrical and optical properties of bilayer SiX (X = N, P, As and Sb)
Ghobadi, N., & Touski, S. B. (2021) · Journal of Physics Condensed Matter · doi:10.1088/1361-648x/abfdf0 · Cited by 11
Light-Induced Tunable n-Doping of Ag-Embedded GO/RGO Sheets in Polymer Matrix
Singh, N., Kothari, D., Ansari, J. R., et al. (2019) · The Journal of Physical Chemistry C · doi:10.1021/acs.jpcc.9b01185 · Cited by 7
Low-frequency electronic and optical properties of rhombohedral graphite
Chiu, C., Huang, Y., Chen, S.-C., et al. (2011) · Physical Chemistry Chemical Physics · doi:10.1039/c0cp01830a · Cited by 7
Optoelectronic properties of ABC‐stacked trilayer graphene
Xiao, Y., Xu, W., Zhang, Y. Y., et al. (2012) · physica status solidi (b) · doi:10.1002/pssb.201248169 · Cited by 7
Structural and electronic properties of layered nanoporous organic nanocrystals
Moses, I. A., & Barone, V. (2021) · RSC Advances · doi:10.1039/d0ra08856k · Cited by 7
Wang, S. (2025) · Modern Physics Letters B · doi:10.1142/s0217984925300029 · Cited by 7
Electric‐Field‐Tunable Bandgaps in the Inverse‐Designed Nanoporous Graphene/Graphene Heterobilayers
Lee, B., & Kang, J. (2022) · Advanced Electronic Materials · doi:10.1002/aelm.202200252 · Cited by 7
Lotfi, E., Rezania, H., Nia, B. A., & Yarmohammadi, M. (2016) · Chinese Physics B · doi:10.1088/1674-1056/25/7/076102 · Cited by 7
Cyclotron resonance of trilayer graphene
Sena, S. H. R., Pereira, J. M., Farias, G. A., & Peeters, F. M. (2012) · Physical Review B · doi:10.1103/physrevb.86.085412 · Cited by 7
Jaskólski, W., Pelc, M., Chico, L., et al. (2018) · Nicolaus Copernicus University Repository (Nicolaus Copernicus University) · Cited by 7
High-bandwidth, variable-resistance differential noise thermometry
Talanov, A. V., Waissman, J., Taniguchi, T., Watanabe, K., & Kim, P. (2021) · Review of Scientific Instruments · doi:10.1063/5.0026488 · Cited by 7
Nakasuga, T., Tajima, S., Hirahara, T., Ebisuoka, R., Oka, T., Watanabe, K., Taniguchi, T., & Yagi, R. (2019) · Physical review. B./Physical review. B · doi:10.1103/physrevb.99.085404 · Cited by 7
Pham, N. N. T., Nguyen, V. K. T., Guo, H., et al. (2023) · Carbon · doi:10.1016/j.carbon.2023.118012 · Cited by 7
Chegel, R. (2022) · Journal of Molecular Graphics and Modelling · doi:10.1016/j.jmgm.2022.108372 · Cited by 7
Anomalous Fano resonance of massive Dirac particle through a time-dependent barrier
Zhang, C., Liu, J., & Fu, L. (2015) · Europhysics Letters (EPL) · doi:10.1209/0295-5075/110/61001 · Cited by 8
Sahu, S., Parashar, S. K. S., & Rout, G. C. (2016) · Materials Today Proceedings · doi:10.1016/j.matpr.2016.01.119 · Cited by 7
Cao, J. L., Gandus, G., Agarwal, T., et al. (2022) · Physical Review Research · doi:10.1103/physrevresearch.4.043073 · Cited by 7
Epitaxial Graphene on SiC(0001)
Seyller, T. K. (2011) · Nanoscience and technology · doi:10.1007/978-3-642-22984-8_5 · Cited by 6
Inducing topological flat bands in bilayer graphene with electric and magnetic superlattices
Seleznev, D., Cano, J., & Vanderbilt, D. H. (2024) · Physical review. B./Physical review. B · doi:10.1103/physrevb.110.205115 · Cited by 7
“This term opens a gap of size 2 | V 0 | between the low-energy bands, which now disperse as and as a result are also slightly flattened near k = 0 [74, 75, 77–80].”
BackgroundChen, X., Shi, Z., Xiang, S.-H., et al. (2016) · Journal of Physics Condensed Matter · doi:10.1088/1361-648x/aa5513 · Cited by 7
Spin dynamics in bilayer graphene: Role of electron-hole puddles and Dyakonov-Perel mechanism
Tuan, D. V., Adam, S., & Roche, S. (2016) · Physical review. B./Physical review. B · doi:10.1103/physrevb.94.041405 · Cited by 7
Li, Y.-Q., Zhang, H., Zhou, T., et al. (2017) · Physica B Condensed Matter · doi:10.1016/j.physb.2017.04.015 · Cited by 7
Review on three-dimensional graphene: synthesis and joint photoelectric regulation in photodetectors
Wang, B., Zhang, J., Wu, H., Zhu, F., Lian, S., Cao, G., Ma, H., Hu, X., Zheng, L., & Wang, G. (2025) · Journal of Semiconductors · doi:10.1088/1674-4926/25010015 · Cited by 9
Tunable band gap in half-fluorinated bilayer graphene under biaxial strains
Hu, C., Zhang, Y., Liu, H. Y., et al. (2012) · Computational Materials Science · doi:10.1016/j.commatsci.2012.06.038 · Cited by 7
Santosh, R., & Kumar, V. (2019) · Journal of Molecular Modeling · doi:10.1007/s00894-019-4187-0 · Cited by 7
Easy-to-configure zero-dimensional valley-chiral modes in a graphene point junction
Davydov, K., Zhang, X., Ren, W., Coles, M., Kline, L. V., Zucker, B., Watanabe, K., Taniguchi, T., & Wang, K. (2024) · Science Advances · doi:10.1126/sciadv.adp6296 · Cited by 12
“The valley-chiral 1D state has been experimentally demonstrated in two major device architectures: gate-defined ( 8 – 10 , 13 ) and naturally occurring ( 11 ,”
BackgroundInterband transitions in narrow-gap carbon nanotubes and graphene nanoribbons
Saroka, V. A., Hartmann, R. R., & Portnoi, M. E. (2019) · Elsevier eBooks · doi:10.1016/b978-0-08-102393-8.00004-2 · Cited by 7
Chegel, R. (2023) · Applied Physics A · doi:10.1007/s00339-023-06809-5 · Cited by 7
Stauber, T., Castro, E. V., Silva, N. A. P., & Peres, N. M. R. (2008) · Journal of Physics Condensed Matter · doi:10.1088/0953-8984/20/33/335207 · Cited by 7
Self-citationBilayer graphene Hall bar with a pn-junction
Milovanović, S. P., Masir, M. R., & Peeters, F. M. (2013) · Journal of Applied Physics · doi:10.1063/1.4821264 · Cited by 7
Zarenia, M., Pereira, J. M., Peeters, F. M., & Farias, G. D. A. (2011) · Nanoscale Research Letters · doi:10.1186/1556-276x-6-452 · Cited by 7
“The electric field creates a charge imbalance between the layers which leads to a gap in the spectrum [5,6].”
BackgroundBand gap engineering in finite elongated graphene nanoribbon heterojunctions: Tight-binding model
Tayo, B. O. (2015) · AIP Advances · doi:10.1063/1.4928450 · Cited by 7
Proximity enhanced magnetism at NiFe2O4/Graphene interface
Schulz, N., Chanda, A., Datt, G., et al. (2022) · AIP Advances · doi:10.1063/9.0000271 · Cited by 7
Metadata
- Authors
- Castro, E. V., Novoselov, K. S., Morozov, S. V., Peres, N. M. R., dos Santos, J. M. B. L., Nilsson, J., Guinea, F., Geim, A. K., & Neto, A. H. C.
- Affiliations
- Universidade do Porto (PT)
- University of Manchester (GB)
- University of Minho (PT)
- Boston University (US)
- Consejo Superior de Investigaciones Científicas (ES)
- ORCID
- Venue
- Physical Review Letters
- Publisher
- American Physical Society (APS)
- Published
- 2007-11-20
- Volume
- 99
- Issue
- 21
- Pages
- 216802-216802
- ISSN
- 0031-9007 (ISSN-L)
- 1079-7114
- OpenAlex
- W2113467957
- Cited by
- 2,033
- References
- 14
- Citations by year
- 2026: 54 · 2025: 60 · 2024: 62 · 2023: 68 · 2022: 85 · 2021: 101 · 2020: 134 · 2019: 102 · 2018: 95 · 2017: 121 · 2016: 134 · 2015: 130 · 2014: 142 · 2013: 146 · 2012: 145
- FWCI
- 55.56
- Type
- journal article
- Language
- en
- Open access
- bronze
- doi.org
- Locations
- Physical Review Letters (publishedVersion)
- PubMed (publishedVersion)
- Research Explorer (The University of Manchester) (publishedVersion)
- arXiv (Cornell University) (submittedVersion)
- DIGITAL.CSIC (Spanish National Research Council (CSIC)) (submittedVersion, other-oa)
- arXiv (Cornell University)
- Bulletin of the American Physical Society
- Topics
- Physical Sciences › Materials Science › Materials Chemistry › Graphene research and applications
- Physical Sciences › Materials Science › Materials Chemistry › 2D Materials and Applications
- Physical Sciences › Physics and Astronomy › Condensed Matter Physics › Quantum and electron transport phenomena
- Keywords
- bilayer graphene, electric field effects, band gap tuning, gate bias, Shubnikov-de Haas effect, cyclotron mass, tight-binding model, quantum Hall effect, electron density
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