The DOI matches its Crossref record; 14 of the 14 references it cites were found in a registry or an index; none of the 8 sources its claims cite is checked for support yet.
Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect
Open accessAbstract
We demonstrate that the electronic gap of a graphene bilayer can be controlled externally by applying a gate bias. From the magnetotransport data (Shubnikov-de Haas measurements of the cyclotron mass), and using a tight-binding model, we extract the value of the gap as a function of the electronic density. We show that the gap can be changed from zero to midinfrared energies by using fields of less, approximately < 1 V/nm, below the electric breakdown of SiO2. The opening of a gap is clearly seen in the quantum Hall regime.
Overview
AI snapshot
Written from the paper’s full text.
TL;DR
The paper reports that bilayer graphene can be converted into a semiconductor whose band gap is externally tunable by gate bias, with the gap ranging from zero to mid-infrared energies. Magnetotransport measurements and tight-binding modeling show clear gap signatures, including a zero Hall conductivity plateau and an asymmetric cyclotron mass.
Key findings
- In biased bilayer graphene, a plateau at zero Hall conductivity appears at the neutrality point, unlike the pristine case; the longitudinal resistivity at neutrality exceeded 150 kΩ at 4 K for the biased device, compared with 6 kΩ for the unbiased device under the same conditions.
- The cyclotron mass depends asymmetrically on carrier density, and comparison with tight-binding theory yields an interlayer hopping parameter of 0.22 eV and indicates gaps larger than 0.2 eV.
- A small-bias linear fit to the screened theory gives a gap of about 1.2 meV per volt relative to a gate voltage of 25 V, while the theory predicts gap saturation at the interlayer hopping scale.
- The model agrees well with angle-resolved photoemission data, except in the gap saturation regime around densities of about 50 × 10¹² cm⁻².
Methods
- Bilayer graphene devices were prepared by micromechanical cleavage on 300 nm SiO₂ and patterned into Hall bars; carrier density was controlled by a Si backgate and by NH₃ chemical doping, with transport measured by lock-in techniques in fields up to 12 T and temperatures from 4 to 300 K.
- Shubnikov–de Haas oscillations were measured versus temperature and fitted to extract the cyclotron mass as a function of carrier density.
- The data were interpreted with a Bernal-stacked bilayer tight-binding model using in-plane hopping of 3.1 eV and interlayer hopping of 0.22 eV, including a self-consistent Hartree treatment of screening; Hall conductivity was modeled for a zigzag-edged ribbon in a magnetic field.
Limitations
- The paper states that the Hartree approach is reliable only when the gap is small compared with the interlayer hopping; for hole doping it underestimates the cyclotron mass while the unscreened model overestimates it, so the true gap lies between these limits and a better screening treatment is needed when the electrostatic energy becomes comparable to the interlayer hopping.
- The paper notes that the comparison with angle-resolved photoemission data works well except in the gap saturation regime at high density.
- Evident from the text: for the transport devices, the gap values are inferred by fitting a tight-binding/Hartree model to magnetotransport rather than measured directly by a spectroscopic probe.
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Claims the paper makes
19 Own result · 18 Own interpretation · 8 Sources not found · 4 No basis given
A result the paper reports from its own data — it cites no other source for it, so there is none to check. The quote shows it is in the paper.
In the paper
“The opening of a gap is clearly seen in the quantum Hall regime.”
§ Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect > Abstract
boosted- Asserted: passes — The authors put it forward as true.
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In the paper
“which is absent in the unbiased case”
§ Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect > Abstract
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In the paper
“by comparing the observed behavior with our tightbinding results, we show that the gap can be tuned to values larger than 0.2 eV”
§ Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect > Abstract
plaindirect- Asserted: passes — The authors put it forward as true.
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In the paper
“in the biased device, xx at n 0 exceeded 150 kOhm at 4 K, as compared to 6 kOhm for the unbiased case under the same conditions”
§ Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect > Abstract
plaincorrelational- Asserted: passes — The authors put it forward as true.
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In the paper
“in a magnetic field, a pronounced plateau at zero Hall conductivity xy 0 is found for the biased bilayer”
§ Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect > Abstract
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In the paper
“the cyclotron mass, m c , in the bilayer biased by chemical doping is an asymmetric function of carrier density, n”
§ Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect > Abstract
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In the paper
“The linear increase of m c with jnj and the pronounced asymmetry between hole-and electron-doping of the biased bilayer are clearly seen here.”
§ Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect > Abstract
boosteddirect- Asserted: passes — The authors put it forward as true.
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In the paper
“We show that the gap can be changed from zero to midinfrared energies by using fields of & 1 V=nm, below the electric breakdown of SiO 2 .”
§ Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect > Abstract
plaindirect- Asserted: passes — The authors put it forward as true.
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- Rests on an assumption: The breakdown field for SiO2 is 1 V/nm (i.e., 300 V for the used oxide thickness).
A result the paper reports from its own data — it cites no other source for it, so there is none to check. The quote shows it is in the paper.
In the paper
“The linear increase of m c with jnj and the pronounced asymmetry between hole-and electron-doping of the biased bilayer are clearly seen here.”
§ Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect > Abstract
boostedcorrelational- Asserted: passes — The authors put it forward as true.
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In the paper
“The energy gap is revealed by the appearance of the N 0 plateau at xy 0 [see the curve labeled ''doped'' in Fig. 1(a)].”
§ Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect > Abstract
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- It may state two separate claims as one. 10
- The quote only partly states this claim. 2
- Probably not a substantial claim. 1
In the paper
“The N 0 plateau is strikingly absent, so that a double step of 8e 2 =h in height occurs at n 0, indicating a metallic state at the neutrality point [3].”
§ Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect > Abstract
What the sources say
- Not matchedcites [3] 3. K. S. Novoselov et al., Nature Phys. 2, 177 (2006).
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
hedgeddirect- Asserted: passes — The authors put it forward as true.
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In the paper
“In this case two flat bands with energies ÿeV=2 and eV=2 appear, similar to the case of zero magnetic field.The other two zero energy bands become dispersive inside the gap, showing the band-crossing phenomenon.”
§ Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect > Abstract
plaindirect- Asserted: passes — The authors put it forward as true.
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In the paper
“In the hole doping region in Fig. 1(b), the Hartree approach underestimates the value of m c whereas the simple unscreened result overestimates it.”
§ Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect > Abstract
plaincorrelational- Asserted: passes — The authors put it forward as true.
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In the paper
“The emerged plateau was accompanied by a huge peak in longitudinal resistivity xx , indicating an insulating state”
§ Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect > Abstract
hedgedcorrelational- Asserted: passes — The authors put it forward as true.
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In the paper
“which provides a clear signature of a gap and allows its estimate”
§ Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect > Abstract
boostedcorrelational- Asserted: passes — The authors put it forward as true.
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In the paper
“we have cross-checked our theory against angle-resolved photoemission spectroscopy (ARPES) data [8] and found excellent agreement.”
§ Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect > Abstract
What the sources say
- Not matchedcites [8] 8. Theory of the gap opening within the continuum model was previously given by E. McCann, Phys. Rev. B 74, 161403 (2006).
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
plaincorrelational- Asserted: passes — The authors put it forward as true.
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A conclusion the paper draws from its own results — it cites no other source for it, so there is none to check. The quote shows it is in the paper.
In the paper
“Zero potential difference and zero gap are expected at n 2n 0 in both unscreened and screened cases, as seen from Eqs. (1) and ( 2) and the fact that nn; 0 0.”
§ Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect > Abstract
plain- Asserted: passes — The authors put it forward as true.
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It may state two separate claims as one.
- The authors state this as an assumption: The charge in layers 1 and 2 of the bilayer is equal to -ne/2.
A conclusion the paper draws from its own results — it cites no other source for it, so there is none to check. The quote shows it is in the paper.
In the paper
“Note that at the zero Hall plateau the current carried around the ribbon loop is zero, I 0, which implies, from the theory view point, a diverging longitudinal resistivity at low T”
§ Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect > Abstract
plaindirect- Asserted: passes — The authors put it forward as true.
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In the paper
“This opens a gap of eV in size.”
§ Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect > Abstract
plaindirect- Asserted: passes — The authors put it forward as true.
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In the paper
“At this particular density the gap closes and the theoretical value becomes independent of the screening assumptions.”
§ Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect > Abstract
plaindirect- Asserted: passes — The authors put it forward as true.
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It may state two separate claims as one. The quote only partly states this claim.
A conclusion the paper draws from its own results — it cites no other source for it, so there is none to check. The quote shows it is in the paper.
In the paper
“a more accurate treatment of screening is needed when eV becomes of the order of t ? .”
§ Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect > Abstract
plain- Asserted: passes — The authors put it forward as true.
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Probably not a substantial claim. The paper’s conclusions may not depend on it.
In the paper
“The coefficient 7:2 10 10 cm ÿ2 =V is determined by the geometry of the resulting capacitor and is in agreement with the values of n 1 found experimentally [1][2][3].”
§ Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect > Abstract
What the sources say
- Not matchedcites [1][2][3]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
plaindirect- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: unclear — It is unclear whether the paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
It may state two separate claims as one.
- Not matched
The authors state this as an assumption.
The charge in layers 1 and 2 of the bilayer is equal to -ne/2.
“Assuming equal charge ÿne=2 in layers 1 and 2 of the bilayer”
The paper relies on this without support.
The breakdown field for SiO2 is 1 V/nm (i.e., 300 V for the used oxide thickness).
“Note that the breakdown field for SiO 2 is 1 V=nm (i.e., 300 V for the used oxide thickness)”
The authors state this as an assumption.
The electric field induced between the two layers can be considered as a result of the effect of charged surfaces placed above and below bilayer graphene.
“The electric field induced between the two layers can be considered as a result of the effect of charged surfaces placed above and below bilayer graphene .”
Self-check
Percentages, sums and reported differences re-computed from the paper’s own numbers.
Each contradiction between two passages listed here was confirmed by an independent check.
Rated minor: it would not touch a result — a value no result rests on, a p-value that stays on the same side of the significance level, or a conflict that is clerical, resolved elsewhere in the paper, or outside its own findings.
In the paper
§ Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect > Abstract
“As pointed out by Laughlin [14], changing the magnetic flux through the ribbon loop by a flux quantum causes the states to move rigidly towards one edge.”
§ Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect > References
“14. The unbiased case, in the continuum approximation, was studied in Ref. [5]. 15. R. B. Laughlin, Phys. Rev. B 23, 5632 (1981).”
Citations
Cites
Electric Field Effect in Atomically Thin Carbon Films
Novoselov, K. S., Geim, A. K., Morozov, S. V., Jiang, D., Zhang, Y., Dubonos, S. V., Grigorieva, I. V., & Firsov, A. A. (2004) · Science · doi:10.1126/science.1102896 · Cited by 66,834
Self-citationGeim, A. K., & Novoselov, K. S. (2007) · Nature Materials · doi:10.1038/nmat1849 · Cited by 39,979
Self-citationTwo-dimensional gas of massless Dirac fermions in graphene
Novoselov, K. S., Geim, A. K., Morozov, S. V., Jiang, D., Katsnelson, M. I., Grigorieva, I. V., Dubonos, S. V., & Firsov, A. A. (2005) · Nature · doi:10.1038/nature04233 · Cited by 21,611
Self-citationExperimental observation of the quantum Hall effect and Berry's phase in graphene
Zhang, Y., Tan, Y.-W., Stormer, H. L., & Kim, P. (2005) · Nature · doi:10.1038/nature04235 · Cited by 13,435
Detection of individual gas molecules adsorbed on graphene
Schedin, F., Geim, A. K., Morozov, S. V., Hill, E. W., Blake, P., Katsnelson, M. I., & Novoselov, K. S. (2007) · Nature Materials · doi:10.1038/nmat1967 · Cited by 8,028
Self-citationControlling the Electronic Structure of Bilayer Graphene
Ohta, T., Bostwick, A., Seyller, T. K., Horn, K., & Rotenberg, E. (2006) · Science · doi:10.1126/science.1130681 · Cited by 3,346
Halperin, B. I. (1982) · Physical Review B · doi:10.1103/physrevb.25.2185 · Cited by 2,547
Quantized Hall conductivity in two dimensions
Laughlin, R. B. (1981) · Physical Review B · doi:10.1103/physrevb.23.5632 · Cited by 2,162
Landau-Level Degeneracy and Quantum Hall Effect in a Graphite Bilayer
McCann, E., & Fal’ko, V. I. (2006) · Physical Review Letters · doi:10.1103/physrevlett.96.086805 · Cited by 2,060
Unconventional quantum Hall effect and Berry’s phase of 2π in bilayer graphene
Novoselov, K. S., McCann, E., Morozov, S. V., Fal’ko, V. I., Katsnelson, M. I., Zeitler, U., Jiang, D., Schedin, F., & Geim, A. K. (2006) · Nature Physics · doi:10.1038/nphys245 · Cited by 1,967
Self-citation
Cited by
Sorted by citations
Items 1,101–1,200 of 2,039
Majidi, R. (2023) · Chemical Physics · doi:10.1016/j.chemphys.2023.111874 · Cited by 11
Missaoui, A., Khabthani, J. J., Jaidane, N.-E., et al. (2017) · The European Physical Journal B · doi:10.1140/epjb/e2017-70664-0 · Cited by 11
Effect of Zeeman splitting and interlayer bias potential on electron transport in bilayer graphene
Zhang, Y., Xie, X. C., & Sun, Q. (2012) · Physical Review B · doi:10.1103/physrevb.86.035447 · Cited by 11
Nematic versus Kekulé Phases in Twisted Bilayer Graphene under Hydrostatic Pressure
Sánchez, M. S., Díaz, I., González, J., et al. (2024) · Physical Review Letters · doi:10.1103/physrevlett.133.266603 · Cited by 11
Edge-State-Induced Stacking of Zigzag Graphene Nanoribbons
Asano, T., & Nakamura, J. (2019) · ACS Omega · doi:10.1021/acsomega.9b03138 · Cited by 11
Noncollinear magnetism and half-metallicity in biased bilayer zigzag graphene nanoribbons
Pan, L., An, J., & Liu, Y. (2013) · New Journal of Physics · doi:10.1088/1367-2630/15/4/043016 · Cited by 11
Layer Polarizability and Easy-Axis Quantum Hall Ferromagnetism in Bilayer Graphene
Pan, C., Wu, Y., Cheng, B., et al. (2017) · Nano Letters · doi:10.1021/acs.nanolett.7b00197 · Cited by 11
Intercalation induced ferromagnetism in group-V transition metal dichalcogenide bilayer
Ahamd, H. M. R., & Zhou, J. H. (2020) · AIP Advances · doi:10.1063/1.5139061 · Cited by 11
Zarenia, M., Hamilton, A. R., Peeters, F. M., & Neilson, D. (2018) · Physical Review Letters · doi:10.1103/physrevlett.121.036601 · Cited by 10
Meena, S., & Choudhary, S. (2017) · AIP Advances · doi:10.1063/1.5009087 · Cited by 11
Wang, D., & Jin, G. (2012) · Journal of Applied Physics · doi:10.1063/1.4751331 · Cited by 11
Electronic properties of disordered bilayer graphene
Ouyang, T., Chen, Y., Xie, Y., et al. (2010) · Solid State Communications · doi:10.1016/j.ssc.2010.09.049 · Cited by 11
Specular Electron Focusing between Gate-Defined Quantum Point Contacts in Bilayer Graphene
Ingla‐Aynés, J., Manesco, A. L. R., Ghiasi, T. S., et al. (2023) · Nano Letters · doi:10.1021/acs.nanolett.3c00499 · Cited by 11
Enhanced second-order Stark effect in twisted bilayer graphene quantum dots
Wang, X., Cui, Y., Zhang, L., et al. (2021) · Nano Research · doi:10.1007/s12274-021-3318-y · Cited by 11
“[31] found that the bandgap of BG is regulated from zero to mid-infrared energies under field strengths smaller than 0.”
BackgroundRezania, H., & Yarmohammadi, M. (2015) · Indian Journal of Physics · doi:10.1007/s12648-015-0821-6 · Cited by 10
Magnetoelectricity in two-dimensional materials
Yīng, Y., & Zülicke, U. (2022) · Advances in Physics X · doi:10.1080/23746149.2022.2032343 · Cited by 11
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Fumega, A. O., & Lado, J. L. (2022) · Nanoscale · doi:10.1039/d2nr05185k · Cited by 11
Pinning and switching of magnetic moments in bilayer graphene
Castro, E. V., López-Sancho, M. P., & Vozmediano, M. A. H. (2009) · DIGITAL.CSIC (Spanish National Research Council (CSIC)) · Cited by 11
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Perkins, D. T. S., & Ferreira, A. (2023) · Elsevier eBooks · doi:10.1016/b978-0-323-90800-9.00203-1 · Cited by 13
“Individual layers in AB bilayer graphene can be addressed separately allowing important device functionalities, including band gap opening through gating (McCann 2006; Castro et al. 2007).”
Ballistic Electron Source with Magnetically Controlled Valley Polarization in Bilayer Graphene
Ingla‐Aynés, J., Manesco, A. L. R., Ghiasi, T. S., et al. (2024) · Physical Review Letters · doi:10.1103/physrevlett.133.156301 · Cited by 11
“For this purpose, Bernal stacked bilayer graphene (BLG) is a unique material [3–7] thanks to its gate-tuneable bandgap [8–11] and trigonal warping, i.e. triangular distortion of its Fermi surface, which has opposite sign in each valley [12] (see Fig.”
BackgroundKaramat, S., Sonuşen, S., Dede, M., et al. (2015) · Journal of materials research/Pratt's guide to venture capital sources · doi:10.1557/jmr.2015.350 · Cited by 11
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Zülicke, U., & Winkler, R. (2014) · Physical Review B · doi:10.1103/physrevb.90.125412 · Cited by 11
Emergence of magnetic behavior in AB-stacked bilayer graphene via Fe-doping
Singla, R., Thakur, J., Rani, P., Kumar, S., Hackett, T. A., & Kashyap, M. K. (2020) · Vacuum · doi:10.1016/j.vacuum.2020.109685 · Cited by 11
Magnetoelectric effect in functionalized few-layer graphene
Santos, E. J. G. (2013) · Physical Review B · doi:10.1103/physrevb.87.155440 · Cited by 11
Sun, J., Wee, A. T. S., & Feng, Y. P. (2012) · AIP Advances · doi:10.1063/1.4745599 · Cited by 11
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Kaestner, B., Hohls, F., Pierz, K., et al. (2016) · Cited by 11
Han, Y., Ni, Y., Guo, X., & Jiao, T. (2023) · Fuel · doi:10.1016/j.fuel.2023.129655 · Cited by 11
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Park, J.-H., Mitchel, W. C., Brown, G. J., et al. (2011) · Applied Physics Letters · doi:10.1063/1.3589364 · Cited by 11
Electrically dependent bandgaps in graphene on hexagonal boron nitride
Kaplan, D., Recine, G., & Swaminathan, V. (2014) · Applied Physics Letters · doi:10.1063/1.4870769 · Cited by 11
Hajiaghajani, A., & Abdolali, A. (2017) · IEEE Magnetics Letters · doi:10.1109/lmag.2017.2746065 · Cited by 11
Faggio, G., Grillo, R., Foti, A., et al. (2021) · ACS Applied Materials & Interfaces · doi:10.1021/acsami.0c21853 · Cited by 11
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Honma, K., Sato, T., Souma, S., Sugawara, K., Tanaka, Y., & Takahashi, T. (2015) · Physical Review Letters · doi:10.1103/physrevlett.115.266401 · Cited by 11
Cao, T., Wang, D., Geng, D., et al. (2016) · Physical Chemistry Chemical Physics · doi:10.1039/c5cp06528c · Cited by 11
Bottom-up assembly of nano-carbon devices by dielectrophoresis
Vijayaraghavan, A. (2013) · physica status solidi (b) · doi:10.1002/pssb.201300565 · Cited by 11
Spin-orbit coupling effects: from graphene to graphite
Konschuh, S. (2011) · University of Regensburg Publication Server (University of Regensburg) · doi:10.5283/epub.22863 · Cited by 12
Quasi-particle spectrum and density of electronic states in AA- and AB-stacked bilayer graphene
Kumar, S. B., & Ajay (2013) · The European Physical Journal B · doi:10.1140/epjb/e2013-31103-8 · Cited by 10
Landau level spectrum for bilayer graphene in a tilted magnetic field
Hyun, Y.-H., Kim, Y., Sochichiu, C. V., et al. (2012) · Journal of Physics Condensed Matter · doi:10.1088/0953-8984/24/4/045501 · Cited by 10
Electrical valley filtering in transition metal dichalcogenides
Hsieh, T.-C., Chou, M.-Y., & Wu, Y.-S. (2018) · Physical Review Materials · doi:10.1103/physrevmaterials.2.034003 · Cited by 10
A DFT study on the electronic and magnetic properties of triangular graphene antidot lattices
Esfahani, Z. T., Saffarzadeh, A., & Akhound, A. (2018) · The European Physical Journal B · doi:10.1140/epjb/e2018-90517-6 · Cited by 10
Formation and Physical Properties of h-BN Atomic Layers: A First-Principles Density-Functional Study
Fujimoto, Y. (2017) · Advances in Materials Science and Engineering · doi:10.1155/2017/2676432 · Cited by 10
Optical Properties of Graphene
Wang, F., & Shi, S. (2017) · Cambridge University Press eBooks · doi:10.1017/9781316681619.004 · Cited by 11
Topologically protected Landau levels in bilayer graphene in finite electric fields
Kawarabayashi, T., Hatsugai, Y., & Aoki, H. (2012) · Physical Review B · doi:10.1103/physrevb.85.165410 · Cited by 10
Chellattoan, R., & Sathian, S. P. (2013) · Solid State Communications · doi:10.1016/j.ssc.2013.08.027 · Cited by 10
Rezania, H., & Azizi, F. (2025) · Applied Physics A · doi:10.1007/s00339-025-08362-9 · Cited by 10
Structure and electronic properties of Au intercalated hexagonal-boron-nitride/graphene bilayer
Mao, Y., Xie, Z., Yuan, J., et al. (2013) · Physica E Low-dimensional Systems and Nanostructures · doi:10.1016/j.physe.2013.02.012 · Cited by 10
Karimi, S., & Rezania, H. (2019) · Chemical Physics · doi:10.1016/j.chemphys.2019.110417 · Cited by 10
Molecular dynamic simulation of mechanical behaviour of RGO produced by thermal reduction method
Liu, X., & Yang, Q. (2017) · Micro & Nano Letters · doi:10.1049/mnl.2017.0072 · Cited by 10
“Nowadays, RGOs are widely applied in various fields such as nanoelectronics [9, 10], sensors [11–13], actuators [14], supercapacitors [15, 16] and transparent conducting thin films [17, 18].”
BackgroundOptimal Thickness for Charge Transfer in Multilayer Graphene Electrodes
Kuroda, M. A., Tersoff, J., Nistor, R. A., & Martyna, G. J. (2014) · Physical Review Applied · doi:10.1103/physrevapplied.1.014005 · Cited by 10
Third harmonic generation in gapped bilayer graphene
Avetissian, A. K., Ghazaryan, A. G., & Sedrakian, K. V. (2019) · Journal of Nanophotonics · doi:10.1117/1.jnp.13.036010 · Cited by 10
Pandey, N., Kumar, A., & Chakrabarti, S. (2019) · Journal of Magnetism and Magnetic Materials · doi:10.1016/j.jmmm.2019.166073 · Cited by 10
Effect of a nonuniform magnetic field on the Landau states in a biased AA-stacked graphene bilayer
Wang, D., & Jin, G. (2013) · Physics Letters A · doi:10.1016/j.physleta.2013.08.041 · Cited by 10
Klein Tunneling through Triple Barrier in AB Bilayer Graphene
Saley, M. H., Mouhafid, A. E., Jellal, A., & Siari, A. (2022) · Annalen der Physik · doi:10.1002/andp.202200308 · Cited by 10
Azar, M. T. H., Zavvari, M., Zehforoosh, Y., et al. (2020) · Plasmonics · doi:10.1007/s11468-019-01110-9 · Cited by 10
Coulomb Oscillations in a Gate-Controlled Few-Layer Graphene Quantum Dot
Song, Y., Xiong, H., Jiang, W., et al. (2016) · Nano Letters · doi:10.1021/acs.nanolett.6b02522 · Cited by 10
Possible broken inversion and time-reversal symmetry state of electrons in bilayer graphene
Yan, X.-Z., & Ting, C. S. (2012) · Physical Review B · doi:10.1103/physrevb.86.235126 · Cited by 10
Electronic properties of bilayer graphene/Janus MoSTe heterostructure
Yun, J., Sung, D., Kim, Y.-J., & Hong, S. (2025) · Current Applied Physics · doi:10.1016/j.cap.2025.03.010 · Cited by 10
Quasiparticle energy and optical excitations of gated bilayer graphene
Liang, Y., & Yang, L. (2012) · Physical Review B · doi:10.1103/physrevb.86.205423 · Cited by 10
Wei, W., Zhang, C., Li, H., et al. (2022) · The Journal of Physical Chemistry Letters · doi:10.1021/acs.jpclett.2c02767 · Cited by 10
The interaction of quasi-particles in graphene with chemical dopants
Bostwick, A., Ohta, T., McChesney, J. L., Emtsev, K. V., Speck, F. D., Seyller, T. K., Horn, K., Kevan, S. D., & Rotenberg, E. (2010) · New Journal of Physics · doi:10.1088/1367-2630/12/12/125014 · Cited by 10
Du, J., & Shi, J. (2021) · Cell Reports Physical Science · doi:10.1016/j.xcrp.2021.100658 · Cited by 10
Controlling adatom magnetism on bilayer graphene by external field
Nafday, D., Kabir, M., & Saha‐Dasgupta, T. (2016) · Physical review. B./Physical review. B · doi:10.1103/physrevb.93.045433 · Cited by 10
Optical and thermal properties of graphene field‐effect transistors
Freitag, M. (2010) · physica status solidi (b) · doi:10.1002/pssb.201000173 · Cited by 10
Nilsson, F., & Aryasetiawan, F. (2021) · Physical Review Materials · doi:10.1103/physrevmaterials.5.l050801 · Cited by 10
Etched graphene single electron transistors on hexagonal boron nitride in high magnetic fields
Epping, A., Engels, S., Volk, C., et al. (2013) · physica status solidi (b) · doi:10.1002/pssb.201300295 · Cited by 10
Kim, S., Hu, Q., Nam, K., et al. (2018) · Chemical Physics Letters · doi:10.1016/j.cplett.2018.03.013 · Cited by 10
Electrically controllable spin transport in bilayer graphene with Rashba spin-orbit interaction
Zhang, Q., Jiang, J., & Chan, K. S. (2019) · Physics Letters A · doi:10.1016/j.physleta.2019.06.015 · Cited by 10
Ketrat, S., Maihom, T., Treesukul, P., et al. (2019) · Journal of Computational Chemistry · doi:10.1002/jcc.26058 · Cited by 10
Vacancy induced zero energy modes in graphene stacks: The case of ABC trilayer
Castro, E. V., López-Sancho, M. P., & Vozmediano, M. A. H. (2012) · Solid State Communications · doi:10.1016/j.ssc.2012.04.027 · Cited by 10
Self-citationHydrogenation of bilayer graphene: A small twist makes a big difference
Dong, J., Zhang, K., & Ding, F. (2015) · Nano Research · doi:10.1007/s12274-015-0888-6 · Cited by 10
“Applying a perpendicular electric field to AB stacking bilayer graphene is found to effectively open a sizable bandgap [12-13].”
BackgroundInteraction-induced metallic state in graphene on hexagonal boron nitride
Xu, J., Song, Z.-Y., Yuan, C., et al. (2016) · Physical review. B./Physical review. B · doi:10.1103/physrevb.94.195103 · Cited by 10
Biased doped silicene as a way to tune electronic conduction
Pogorelov, Y. G., & Loktev, V. M. (2016) · Physical review. B./Physical review. B · doi:10.1103/physrevb.93.045117 · Cited by 10
Large scale epitaxial graphite grown on twin free nickel(111)/spinel substrate
Lu, Z., Sun, X., Xiang, Y., et al. (2019) · CrystEngComm · doi:10.1039/c9ce01515a · Cited by 10
Bolometric arrays and infrared sensitivity of VO2 films with varying stoichiometryPreprint
Hu, Y., Lin, C., Min, S., et al. (2017) · arXiv (Cornell University) · doi:10.48550/arxiv.1702.06412 · Cited by 9
“resistive switch (URS), if not, the resistive switching behavior was classified as bipolar resistive switch (BRS) [31-70].”
BackgroundEnergy gap opening by crossing drop cast single-layer graphene nanoribbons
Yamada, T. K., Fukuda, H., Fujiwara, T., et al. (2018) · Nanotechnology · doi:10.1088/1361-6528/aac36b · Cited by 9
“It has been shown that breaking the inversion symmetry in graphene bilayers by applying an electric field perpendicular to the plane of the graphene bilayer opens a gap [25, 26].”
BackgroundMoiré excitons in biased twisted bilayer graphene under pressure
Duarte, V. G. M., da Costa, D. R., Peres, N. M. R., et al. (2024) · Physical review. B./Physical review. B · doi:10.1103/physrevb.110.035405 · Cited by 9
Self-citationObservation of anomalous transport characteristics in graphene-oxide thinfilm
Venugopal, G., Sivalingam, Y., Krishnamoorthy, K., et al. (2018) · Materials Chemistry and Physics · doi:10.1016/j.matchemphys.2018.03.082 · Cited by 9
Sun, L.-F., Dong, L.-M., Wu, Z.-F., & Fang, C. (2013) · Chinese Physics B · doi:10.1088/1674-1056/22/7/077201 · Cited by 9
Electronic structure of twisted bilayer graphene
Jiang-Bin, W., Zhang, X., Tan, P., Feng, Z., & Jia, L. X. (2013) · Acta Physica Sinica · doi:10.7498/aps.62.157302 · Cited by 9
Performance Prediction of Graphene-Channel Field-Effect Transistors
Sano, E., & Otsuji, T. (2009) · Japanese Journal of Applied Physics · doi:10.1143/jjap.48.011604 · Cited by 9
Spin and valley control in single and double electrostatic silicene quantum dots
Szafran, B., & Żebrowski, D. (2018) · Physical review. B./Physical review. B · doi:10.1103/physrevb.98.155305 · Cited by 9
Unique Electronic Properties of the Twisted Bilayer Graphene
Wang, M., Shan, W., & Wang, H. (2023) · physica status solidi (b) · doi:10.1002/pssb.202200344 · Cited by 9
Dora, R. K., & Balram, A. C. (2023) · Physical review. B./Physical review. B · doi:10.1103/physrevb.108.235153 · Cited by 9
Current flow in biased bilayer graphene: Role of sublattices
Paez, C., Bahamon, D. A., & Pereira, A. L. C. (2014) · Physical Review B · doi:10.1103/physrevb.90.125426 · Cited by 9
Spin polarization and magnetoresistance through a ferromagnetic barrier in bilayer graphene
Cheraghchi, H., & Adinehvand, F. (2012) · Journal of Physics Condensed Matter · doi:10.1088/0953-8984/24/4/045303 · Cited by 9
Shinde, P. P., & Kumar, V. (2012) · Nano LIFE · doi:10.1142/s1793984412300099 · Cited by 9
dμdn in suspended bilayer graphene: The interplay of disorder and band gap
Abergel, D., Min, H., Hwang, E. H., et al. (2011) · Physical Review B · doi:10.1103/physrevb.84.195423 · Cited by 9
Spin valley and giant quantum spin Hall gap of hydrofluorinated bismuth nanosheet
Gao, H., Wu, W., Hu, T., Stroppa, A., Wang, X., Wang, B., Miao, F., & Ren, W. (2018) · Scientific Reports · doi:10.1038/s41598-018-25478-6 · Cited by 9
Two-Dimensional Anisotropic C10 Carbon Allotrope with Mechanically Tunable Band Gap
Gaikwad, P. V. (2019) · ACS Omega · doi:10.1021/acsomega.9b00108 · Cited by 9
Analytical model for threshold voltage of double gate bilayer graphene field effect transistors
Saeidmanesh, M., Rahmani, M., Karimi, H., et al. (2013) · Microelectronics Reliability · doi:10.1016/j.microrel.2013.08.003 · Cited by 9
Tuning Schottky Barrier of Single-Layer MoS2 Field-Effect Transistors with Graphene Electrodes
Jang, A. (2022) · Nanomaterials · doi:10.3390/nano12173038 · Cited by 9
Electric bias control of impurity effects in bilayer graphene
Pogorelov, Y. G., Santos, M. C., & Локтев, В. М. (2015) · Physical Review B · doi:10.1103/physrevb.92.075401 · Cited by 9
Band-gap engineering in fluorographene nanoribbons under uniaxial strain
Zhang, Y., & Li, Q. (2014) · Journal of Applied Physics · doi:10.1063/1.4863335 · Cited by 9
Wei, Y., Liu, C., Wang, T., et al. (2020) · Computational Materials Science · doi:10.1016/j.commatsci.2020.109692 · Cited by 9
Field-induced recovery of massless Dirac fermions in epitaxial graphene on SiC
Lee, H., Kim, S., Ihm, J., et al. (2011) · Carbon · doi:10.1016/j.carbon.2011.01.062 · Cited by 9
Electronic Properties of “Graphene”
Srivastav, S. K. (2024) · Springer theses · doi:10.1007/978-3-031-67051-0_1 · Cited by 9
Quantum magneto-optics of the graphite family
Falkovsky, L. A. (2012) · Journal of Experimental and Theoretical Physics · doi:10.1134/s1063776112130031 · Cited by 9
Thermal conductivity of disordered AA-stacked bilayer graphene in the presence of bias voltage
Rezania, H., & Abdi, A. (2015) · The European Physical Journal B · doi:10.1140/epjb/e2015-60133-3 · Cited by 9
Nonlinear optical effects of opening a gap in graphene
Carvalho, D. N., Biancalana, F., & Marini, A. (2018) · Physical review. B./Physical review. B · doi:10.1103/physrevb.97.195123 · Cited by 9
A Scheme for Silicon on Insulator Field Effect Transistor with Improved Performance using Graphene
Karbalaei, M., & Dideban, D. (2019) · ECS Journal of Solid State Science and Technology · doi:10.1149/2.0131909jss · Cited by 9
Wang, D., & Jin, G. (2013) · Journal of Applied Physics · doi:10.1063/1.4852395 · Cited by 9
Metadata
- Authors
- Castro, E. V., Novoselov, K. S., Morozov, S. V., Peres, N. M. R., dos Santos, J. M. B. L., Nilsson, J., Guinea, F., Geim, A. K., & Neto, A. H. C.
- Affiliations
- Universidade do Porto (PT)
- University of Manchester (GB)
- University of Minho (PT)
- Boston University (US)
- Consejo Superior de Investigaciones Científicas (ES)
- ORCID
- Venue
- Physical Review Letters
- Publisher
- American Physical Society (APS)
- Published
- 2007-11-20
- Volume
- 99
- Issue
- 21
- Pages
- 216802-216802
- ISSN
- 0031-9007 (ISSN-L)
- 1079-7114
- OpenAlex
- W2113467957
- Cited by
- 2,033
- References
- 14
- Citations by year
- 2026: 54 · 2025: 60 · 2024: 62 · 2023: 68 · 2022: 85 · 2021: 101 · 2020: 134 · 2019: 102 · 2018: 95 · 2017: 121 · 2016: 134 · 2015: 130 · 2014: 142 · 2013: 146 · 2012: 145
- FWCI
- 55.56
- Type
- journal article
- Language
- en
- Open access
- bronze
- doi.org
- Locations
- Physical Review Letters (publishedVersion)
- PubMed (publishedVersion)
- Research Explorer (The University of Manchester) (publishedVersion)
- arXiv (Cornell University) (submittedVersion)
- DIGITAL.CSIC (Spanish National Research Council (CSIC)) (submittedVersion, other-oa)
- arXiv (Cornell University)
- Bulletin of the American Physical Society
- Topics
- Physical Sciences › Materials Science › Materials Chemistry › Graphene research and applications
- Physical Sciences › Materials Science › Materials Chemistry › 2D Materials and Applications
- Physical Sciences › Physics and Astronomy › Condensed Matter Physics › Quantum and electron transport phenomena
- Keywords
- bilayer graphene, electric field effects, band gap tuning, gate bias, Shubnikov-de Haas effect, cyclotron mass, tight-binding model, quantum Hall effect, electron density
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