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The DOI matches its Crossref record; 59 of the 59 references it cites were found in a registry or an index.

Transport processes during the growth of oxide films at elevated temperature

Atkinson, A.·1985·Reviews of Modern Physics

Abstract

The current understanding of the growth of thermal oxide films in terms of the transport properties of the oxides is reviewed. Emphasis is placed on examining quantitative relationships between the film growth rate and other measurable parameters of the oxides. The theories of film growth which are expected to apply in the extreme limits of thick films (Wagner) and thin films (Cabrera and Mott) are outlined. Particular attention is given to examining the expected limits of validity of these theories and to the various ways in which their predictions can be tested experimentally. The growth of a selection of important oxides is then discussed in the light of these two theories. The examples (CoO, NiO, ${\mathrm{Fe}}_{3}$${\mathrm{O}}_{4}$, ${\mathrm{Cr}}_{2}$${\mathrm{O}}_{3}$, ${\mathrm{Al}}_{2}$${\mathrm{O}}_{3}$, and Si${\mathrm{O}}_{2}$) have been selected such that together they serve to test the theories, have technological relevance, and exhibit a wide variation in behavior. The dominant role of diffusion along oxide grain boundaries in controlling the growth of the crystalline oxides is highlighted.

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Metadata

Authors
Atkinson, A.
Venue
Reviews of Modern Physics
Published
1985-04-01
Volume
57
Issue
2
Pages
437-470
ISSN
0034-6861 (ISSN-L)
OpenAlex
W2096946885
Cited by
772
References
59
FWCI
62.52
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Transport processes during the growth of oxide films at elevated temperature. https://app.cochat.ai/papers/10.1103/revmodphys.57.437
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Atkinson, A. (1985). Transport processes during the growth of oxide films at elevated temperature. Reviews of Modern Physics. https://doi.org/10.1103/revmodphys.57.437

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