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Comparisons of SiC MOSFET and Si IGBT Based Motor Drive Systems

Zhao, Tiefu, Wang, Jun, Huang, Alex Q., Agarwal, Anant·2007·2007 IEEE Industry Applications Annual Meeting

Abstract

With the rapid development of silicon carbide (SiC) material quality, SiC power devices are gaining tremendous attentions in power electronics. In this paper, a SiC device based motor drive system is performed to provide a quantitative estimate of the system improvement. Two 60 kW motor drive systems based on SiC MOSFET/Schottky diode and Si IGBTs are designed. The power losses of the two inverters with sinusoidal pulse width modulation (SPWM) control are calculated analytically. By comparing the efficiencies, sizes and temperatures of the two designed systems, SiC device shows the superior advantages of smaller loss, better efficiency and smaller size in the same motor drive application.

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Metadata

Authors
Zhao, T., Wang, J., Huang, A. Q., & Agarwal, A.
Venue
2007 IEEE Industry Applications Annual Meeting
Publisher
IEEE
Published
2007-09
Pages
331-335
ISSN
0197-2618 (ISSN-L)
OpenAlex
W2159537490
Cited by
168
References
0
FWCI
2.01
Type
conference paper
Language
en
Open access
closed

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CoChat. (2026). Citation check: Comparisons of SiC MOSFET and Si IGBT Based Motor Drive Systems. https://app.cochat.ai/papers/10.1109/07ias.2007.51
The paper
Zhao, T., Wang, J., Huang, A. Q., & Agarwal, A. (2007). Comparisons of SiC MOSFET and Si IGBT Based Motor Drive Systems. 2007 IEEE Industry Applications Annual Meeting. https://doi.org/10.1109/07ias.2007.51

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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).

Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.