The DOI matches its Crossref record; 27 of the 27 references it cites were found in a registry or an index.
A 1200-V, 60-A SiC MOSFET Multichip Phase-Leg Module for High-Temperature, High-Frequency Applications
Abstract
In this paper, a high-temperature, high-frequency, wire-bond-based multichip phase-leg module was designed, fabricated, and fully tested. Using paralleled Silicon Carbide (SiC) MOSFETs, the module was rated at 1200 V and 60 A, and was designed for a 25-kW three-phase inverter operating at a switching frequency of 70 kHz, and in a harsh environment up to 200 °C, for aircraft applications. To this end, the temperature-dependent characteristics of the SiC MOSFET were first evaluated. The results demonstrated the superiority of the SiC MOSFET in both static and switching performances compared to Si devices, but meanwhile did reveal the design tradeoff in terms of the device's gate oxide stability. Various high-temperature packaging materials were then extensively surveyed and carefully selected for the module to sustain the harsh environment. The electrical layout of the module was also optimized using a modeling and simulation approach, in order to minimize the device parasitic ringing during high-speed switching. Finally, the static and switching performances of the fabricated module were tested, and the 200 °C continuous operation of the SiC MOSFETs was verified.
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Cites
Moving towards a more electric aircraft
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PWM Converter Power Density Barriers
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Time Dependence of Bias-Stress-Induced SiC MOSFET Threshold-Voltage Instability Measurements
Lelis, A. J., Habersat, D., Green, R., Ogunniyi, A., Gurfinkel, M., Suehle, J., & Goldsman, N. (2008) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2008.926672 · Cited by 326
Reliability and performance limitations in SiC power devices
Singh, R. (2006) · Microelectronics Reliability · doi:10.1016/j.microrel.2005.10.013 · Cited by 284
Chen, Z., Boroyevich, D., & Burgos, R. (2010) · The 2010 International Power Electronics Conference - ECCE ASIA - · doi:10.1109/ipec.2010.5543851 · Cited by 236
Self-citationReliability Issues of SiC MOSFETs: A Technology for High-Temperature Environments
Yu, L. C., Dunne, G. T., Matocha, K. S., Cheung, K. P., Suehle, J. S., & Sheng, K. (2010) · IEEE Transactions on Device and Materials Reliability · doi:10.1109/tdmr.2010.2077295 · Cited by 227
Temperature dependence of Fowler-Nordheim current in 6H- and 4H-SiC MOS capacitors
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Comparisons of SiC MOSFET and Si IGBT Based Motor Drive Systems
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Characterization and modeling of 1.2 kv, 20 A SiC MOSFETs
Chen, Z., Boroyevich, D., Burgos, R. P., & Wang, F. (2009) · IEEE Energy Conversion Congress and Exposition (ECCE) · doi:10.1109/ecce.2009.5316106 · Cited by 163
Self-citationSurvey on High-Temperature Packaging Materials for SiC-Based Power Electronics Modules
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Cited by
A Review of SiC Power Module Packaging Technologies: Challenges, Advances, and Emerging Issues
Lee, H., Smet, V., & Tummala, R. (2020) · IEEE Journal of Emerging and Selected Topics in Power Electronics · doi:10.1109/jestpe.2019.2951801 · Cited by 526
Zhao, C., Wang, L., & Zhang, F. (2020) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2019.2954716 · Cited by 146
Evaluation of Aging's Effect on Temperature-Sensitive Electrical Parameters in SiC mosfets
Yang, F., Ugur, E., & Akin, B. (2020) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2019.2950311 · Cited by 121
Farhadi, M., Yang, F., Pu, S., Vankayalapati, B. T., & Akin, B. (2021) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2021.3049394 · Cited by 93
A Practical On-Board SiC MOSFET Condition Monitoring Technique for Aging Detection
Pu, S., Yang, F., Vankayalapati, B. T., Ugur, E., Xu, C., & Akin, B. (2020) · IEEE Transactions on Industry Applications · doi:10.1109/tia.2020.2980220 · Cited by 75
Metadata
- Authors
- Chen, Z., Yao, Y., Boroyevich, D., Ngo, K. D. T., Mattavelli, P., & Rajashekara, K.
- Venue
- IEEE Transactions on Power Electronics
- Published
- 2014-05
- Volume
- 29
- Issue
- 5
- Pages
- 2307-2320
- ISSN
- 0885-8993 (ISSN-L)
- 1941-0107
- OpenAlex
- W2096915251
- Cited by
- 277
- References
- 27
- FWCI
- 9.59
- Type
- journal article
- Language
- en
- Open access
- closed
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- CoChat. (2026). Citation check: A 1200-V, 60-A SiC MOSFET Multichip Phase-Leg Module for High-Temperature, High-Frequency Applications. https://app.cochat.ai/papers/10.1109/tpel.2013.2283245
- The paper
- Chen, Z., Yao, Y., Boroyevich, D., Ngo, K. D. T., Mattavelli, P., & Rajashekara, K. (2014). A 1200-V, 60-A SiC MOSFET Multichip Phase-Leg Module for High-Temperature, High-Frequency Applications. IEEE Transactions on Power Electronics. https://doi.org/10.1109/tpel.2013.2283245
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