Essential physics of carrier transport in nanoscale MOSFETs

Cited by (554)

Items 401–500 of 554

1. Evaluation of quasi-ballistic transport in nano-MOSFETs by deterministic solver of the time dependent multi-subbands Boltzmann Transport Equation
   Yong Wang, Tiao Lu, Xiaoyan Liu, Gang Du · 2011 · IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)
2. Postannealing Effects on Strain/Crystal Quality of Lateral Source Relaxed/Strained Layer Heterostructures Fabricated by O+ Ion Implantation
   Tomohisa Mizuno, Juria Takehi, Shou Tanabe · 2012 · Japanese Journal of Applied Physics
3. Time-Stabilization on Flat Currents with Non-Degenerate Boltzmann-Poisson Models
   Laurent Gosse · 2013 · SIMAI springer series
4. Tunneling Component of the Ballistic Current in Ultimate Double-Gate Devices
   Jean‐Luc Autran, Daniela Munteanu · 2003 · Electrochemical and Solid-State Letters
5. Study of Backscattering Phenomenon from Drain Region of Silicon Decanano Diode Using Nonequilibrium Green's Function Approach
   Toshiyuki Tsutsumi, Kazutaka Tomizawa · 2010 · Japanese Journal of Applied Physics
6. Analytical model of ballistic current for GAA nanowire MOSFET including band structure effects: Application to ring oscillator
   Julien Dura, Sbastien Martinie, Daniela Munteanu, François Triozon, Sylvain Barraud, Yann‐Michel Niquet, J. C. Barbé, Jean‐Luc Autran · 2011 · Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon
7. Analytical Compact Model for Quantization in Undoped Double-Gate Metal Oxide Semiconductor Field Effect Transistors and Its Impact on Quasi-Ballistic Current
   Marlène Ferrier, Raphael Clerc, G. Pananakakis, G. Ghibaudo, F. Bœuf, T. Skotnicki · 2006 · Japanese Journal of Applied Physics
8. On the current saturation in low dimensional MOSFETs
   A. Benfdila, M.T. Bensidhoum · 2004
9. Analog/RF Performance and Optimization of Vertical III–V Double-Gate Transistor
   Kun-Huan Shih, Chi On Chui · 2013 · IEEE Transactions on Electron Devices
10. An improved procedure to extract the limiting carrier velocity in ultra scaled CMOS devices
    P. Toniutti, Raphael Clerc, Pierpaolo Palestri, C. Diouf, A. Cros, David Esseni, F. Bœuf, G. Ghibaudo, L. Selmi · 2012 · IEEE International Conference on Microelectronic Test Structures (ICMTS)
11. On the effect of scattering in Schottky Barrier MOSFETs
    Lang Zeng, Xiao Yan Liu, Gang Du, Jin Kang, Ruqi Han · 2008 · IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)
12. Electronic transport in GAA silicon nanowire MOSFETs: From Kubo-Greenwood mobility including screening remote coulomb scattering to analytical backscattering coefficient
    Julien Dura, François Triozon, Daniela Munteanu, Sylvain Barraud, Sbastien Martinie, Jean‐Luc Autran · 2012 · International Workshop on Computational Electronics
13. Contact engineering for nanocarbon interconnects
    Yusuke Abe, Anshul A. Vyas, Richard Senegor, Patrick Wilhite, Cary Y. Yang · 2015 · IEEE International Conference on Nanotechnology (IEEE-NANO)
14. Analyze the Tunneling Effect on Gate-All-Around Field Effect Transistor
    Awanit Sharma, Shyam Akashe · 2014 · International Journal of Advanced Science and Technology
15. Extracting a closed-form I–V equation and noise analysis for CNFET in analog/RF applications
    Omid Khorgami, Alireza Saberkari, Javad Bagheri Asli, Seyed Mohsen Hosseini-Golgoo, Eduardo José Alarcón Cot · 2017 · IEEE International New Circuits and Systems Conference (NEWCAS)
16. Impact of crystal orientation and surface scattering on DG-MOSFETs in quasi-ballistic region
    Lei Shen, Shaoyan Di, Longxiang Yin, Yun Li, Xiaoyan Liu, Gang Du · 2018 · Journal of Semiconductors
17. Research on Noise Suppression in Double-Gate Nano-MOSFETs Based on Monte Carlo Simulation
    Xiaofei Jia, Liang He, Wenhao Chen · 2019 · MAPAN
18. Investigation of Electrical Behaviors Observed in Vertical GaN Nanowire Transistors Using Extended Landauer-Büttiker Formula
    Fatimah Arofiati Noor, Ibnu Syuhada, Toto Winata, Yu Feng, Muhammad Fahlesa Fatahilah, Hutomo Suryo Wasisto, Khairurrijal Khairurrijal · 2020 · IEEE Access
19. The Monte Carlo approach to transport modeling in deca-nanometer MOSFETs
    ENRICO SANGIORGI, Pierpaolo Palestri, David Esseni, C. Fiegna, L. Selmi · 2007 · European Solid-State Circuits Conference (ESSCIRC)
20. An optimized nanoscale Quasi-Ballistic DG MOSFET model with diffusive carrier scattering dependency
    Vyas R. Murnal, C. Vijaya · 2022 · International Journal of Electronics
21. Influence of ballistic effects in ultra-small MOSFETs
    Jérôme Saint-Martin, Aubry-Fortuna, Bournel, Dollfus, Galdin, Chassat · 2004
22. A Quasi-Ballistic Model for Short Channel Monolayer Graphene Field Effect Transistor Including Scattering Effects
    Sudipta Bardhan, Manodipan Sahoo, Jagannath Samanta, Hafizur Rahaman · 2024 · IETE Journal of Research
23. Fundamentals of Photonics and Optoelectronics in Modern Industrial Processes
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24. Tunneling and intersubband coupling in ultra-thin body double-gate mosfets
    Viktor A. Sverdlov, A. Gehring, Hans Kosina, S. Selberherr · 2005 · European Solid-State Device Research Conference
25. A surface potential based quasi-ballistic double gate MOSFET model
    Jin Huang, Ganggang Zhang, Xiaoyan Liu, Gang Du · 2015 · IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)
26. Nanowire Transistors and RF Circuits for Low-Power Applications
    Karl‐Magnus Persson · 2014
27. Computational Investigation of Quantum Transport to Design Single-Strand DNA Logic Gate Using Silicon Carbide Nanotube Electrode
    Pradipta Roy, Debarati Dey, Debashis De · 2019 · IETE Journal of Research
28. Electron transport properties of electrically doped guanine nano-sheet based bio-Zener diode: a first principle paradigm
    Debarati Dey, Debashis De · 2021 · Journal of Computational Electronics
29. A Theoretical Study of Electron Mobility Distribution in FDSOI MOSFET
    Nima Dehdashti Akhavan, Gilberto Antonio Umana-Membreno, Renjie Gu, Jarek Antoszewski, L. Faraone, Sorin Cristoloveanu · 2021 · Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon
30. Electron mobility distribution in FD-SOI MOSFETs using a NEGF-Poisson approach
    Nima Dehdashti Akhavan, Gilberto Antonio Umana-Membreno, Renjie Gu, Jarek Antoszewski, L. Faraone, Sorin Cristoloveanu · 2022 · Solid-State Electronics
31. Geometrical scaling effects on carrier transport in ultrathin-body MOSFETs
    van der Jan-Laurens P.J. Steen · 2011
32. Physics and Simulation of Quasi-Ballistic Transport in Nanoscale Transistors
    Jung-Hoon Rhew · 2013 · Purdue e-Pubs (Purdue University System)
33. New tools for the direct characterisation of FinFETs
    Giuseppe Carlo Tettamanzi, Ajoy Paul, S. Lee, Gerhard Klimeck, Sven M. J. Rogge · 2011 · arXiv (Cornell University)
34. Metrology (including materials characterization) for nanoelectronics
    Alain C. Diebold, Jimmy Price, Ping-Fang Hung · 2006 · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE
35. Kinetic study of quasi‐ballistic electron transport in nanoscale semiconductor devices
    Nobuyuki Sano · 2005 · Electronics and Communications in Japan (Part II Electronics)
36. High-temperature CNFET charactristics
    Samaneh Soleimani Amiri, Ali Afzali‐Kusha, Behjat Forouzandeh · 2009 · International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)
37. The impact of longitudinal nonuniform fin-thickness on quasi-ballistic transport in FinFETs
    Nuno Serra, Pierpaolo Palestri, Geert D. J. Smit, L. Selmi · 2008 · Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon
38. Analytical modelling and performance analysis of double-gate MOSFET-based circuit including ballistic/quasi-ballistic effects
    Sbastien Martinie, Daniela Munteanu, G. Le Carval, Jean‐Luc Autran · 2009 · Molecular Simulation
39. Physics-Based Modelling of Ballistic Transport in Nanoscale Transistor
    Ismail Saad, Razak Mohd Ali Lee, Razali Ismail, Vijay Kumar Arora · 2009 · Asia International Conference on Modelling & Simulation (AMS)
40. Scattering Theory of the MOSFET
    2006 · Kluwer Academic Publishers eBooks
41. Conservation Laws at Physical Origins of Universal Mobility in MOSFET Inversion Layers in Consilience with River Flow in a Gravitational Field
    F.S. Shoucair · 2022
42. Fabrication, characterization, and modeling of metallic source/drain MOSFETs
    Valur Gudmundsson · 2011 · KTH Publication Database DiVA (KTH Royal Institute of Technology)
43. Challenges to Advanced Materials Characterization for ULSI Applications
    Alain C. Diebold · 2006 · Springer eBooks
44. Crossover from diffusive to ballistic transport as a function of frequency in a two dimensional electron gas
    Sungmu Kang, Peter John Burke, Loren N. Pfeiffer, K. W. West · 2004 · International Semiconductor Device Research Symposium
45. Advanced modeling of nanoscale multigate transistors for circuit simulation
    M. Balaguer Jiménez · 2013
46. Challenges and solutions for numerical modeling of nanoMOSFETs
    Gilberto Curatola, Gianluca Fiori, Giuseppe Iannaccone · 2004 · IEEE Conference on Nanotechnology (IEEE NANO)
47. Physical modeling of double-gate transistor
    Gennady Ivanovich Zebrev · 2004
48. Transient simulation of nano-scale UTBB nmosfets by deterministically solving BTE
    Shao-yan Dia, Kai Zhao, Tiao Lu, Gang Du, Xiaoyan Liu · 2014 · IEEE International Conference on Solid-State and Integrated Circuit Technology
49. Quasi-ballisticity of the electron transport in a 16nm silicon double-gate nMOSFET
    Kai Zhao, Christoph Jungemann, Xiaoyan Liu · 2011 · IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)
50. A tradeoff between on and off current for armchair graphene nanoribbon field effect transistors explained by the complex band structure
    Tongsheng Xia, Pilong Yang, Liujun Zhang, Hongge Li · 2012 · IEEE International Conference on Solid-State and Integrated Circuit Technology
51. Impact of (Quasi-)Ballistic Transport on Operation of Complementary Metal–Oxide–Semiconductor Inverters Based on Fully-Depleted Silicon-on-Insulator and Nanowire Devices
    Sébastien Martinie, Daniela Munteanu, G. Le Carval, Julien Dura, Marie-Anne Jaud, Sylvain Barraud, Jean‐Luc Autran · 2011 · Japanese Journal of Applied Physics
52. Investigation of Channel Backscattering Characteristics in Nanoscale Uniaxial-Strained PMOSFETs
    Wei Lee, Pin Su · 2009 · IEEE Transactions on Nanotechnology
53. Power scalability in a mesh-connected reconfigurable architecture
    Paul Beckett · 2009 · ACM Transactions on Embedded Computing Systems
54. Stress coefficient extractions on MOSFET micro-sensors
    Chung-Yen Ni, Ren-Tzung Tan, Hsien Chung, Kun-Fu Tseng, Ben-Je Lwo · 2011 · International Microsystems, Packaging, Assembly and Circuits Technology Conference
55. Adaptive wiring for 20nm scale epitaxial silicon Ohmic contacts to silicon nanowires
    Michael J. Rooks, G. M. Cohen, J. O. Chu, Paul Michael Solomon, John A. Ott, R.J. Miller, Raman G. Viswanathan, Wilfried Hänsch · 2007 · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena
56. Monte-Carlo simulation of MOSFETs with band offsets in the source and drain
    M. Braccioli, Pierpaolo Palestri, M. Mouis, T. Poiroux, M. Vinet, G. Le Carval, C. Fiegna, ENRICO SANGIORGI, S. Deleonibus · 2007 · Solid-State Electronics
57. Stacked field effect transistor integration in double channel transistors (DCT) with tri-state transfer slope and ballistic field effect behavior
    Frank Wirbeleit · 2010 · Microelectronic Engineering
58. Enhancement of ballistic efficiency due to source to channel heterojunction barrier in Si metal oxide semiconductor field effect transistors
    Wenlong Wang, H. Tsuchiya, M. Ogawa · 2009 · Journal of Applied Physics
59. A deterministic method study of the impact of the Pauli principle in double-gate MOSFETs
    Christoph Jungemann, Kai Zhao, Xiaoyan Liu · 2012 · Chinese Physics B
60. Analysis of channel electrons scattered in each region of silicon nanodiode at low drain voltage using nonequilibrium Green’s function approach
    Toshiyuki Tsutsumi, Kazutaka Tomizawa · 2014 · Japanese Journal of Applied Physics
61. Monte Carlo Method for Advanced Semiconductor Devices
    Nobuyuki Sano · 2009 · The Journal of the Institute of Electrical Engineers of Japan
62. Quantum ballistic simulation study of In0.7Ga0.3As/InAs/In0.7Ga0.3As Quantum Well MOSFET
    Sudipta Romen Biswas, Kanak Datta, Abir Shadman, Ehsanur Rahman, Quazi D. M. Khosru · 2014 · International Conference on Electrical and Computer Engineering (ICECE)
63. Extraction of Ballistic Parameters in 65 nm MOSFETs
    Junsoo Kim, Jaehong Lee, Yong-Min Kwon, Byung‐Gook Park, Jong-Duk Lee, Hyungcheol Shin · 2009 · JSTS Journal of Semiconductor Technology and Science
64. Decoherence Due to Electron-Phonon Scattering in Semiconductor Nanodevices
    Damien Querlioz, Jérôme Saint-Martin, Philippe Dollfus · 2009 · International Workshop on Computational Electronics
65. Experimental Characterization of Quasi-Fermi Potential Profile in the Channel of a Silicon Nanowire Field-Effect Transistor with Four-Terminal Geometry
    Soshi Sato, Kenji Ohmori, Kuniyuki Kakushima, Parhat Ahmet, Kenji Natori, Keisaku Yamada, Hiroshi Iwai · 2011 · Applied Physics Express
66. Quantum ballistic simulation study of InGaAs/InAs/InGaAs quantum well MOSFET: Effects of doping and physical device parameters
    Sudipta Romen Biswas, Kanak Datta, Ehsanur Rahman, Abir Shadman, Quazi D. M. Khosru · 2014 · IEEE International Conference on Semiconductor Electronics
67. Assessment of III–V MOSFET architectures for low power applications using static and dynamic numerical simulation
    Ming Shi, Jérôme Saint-Martin, Arnaud Bournel, Damien Querlioz, Philippe Dollfus, Jiongjong Mo, Nicolas Wichmann, L. Desplanque, Xavier Wallart, F. Danneville et al. · 2011 · IEEE International SOI Conference (SOI)
68. Design considerations to enhance the modulation efficiency and cutoff frequency of AlGaN/InGaN/GaN HEMTs
    Iman Rezanezhad Gatabi, D. W. Johnson, Jung Hwan Woo, Michael Babb, Harlan Rusty Harris · 2013 · International Conference on Design & Technology of Integrated Systems in Nanoscale Era (DTIS)
69. Modelling and analysis of scaled MOSFET devices and circuit simulation
    Mustafa M. EL-Muradi, Mohamed A. Elmansouri · 2009 · IEEE International Conference on Electronics, Circuits and Systems (ICECS)
70. Strategy for in-line MOS transistor transport optimization
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71. Electron transport in nanoscale semiconductor devices: ballistic versus quasiballistie
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72. A theoretical study of the performance of sub-micron MOSFET devices in the presence of edge potential
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73. Advanced technologies for enhancing drive current of high-density transistors
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74. Ballistic carrier transport in a quasi-two-dimensional nanoscale field effect transistor (FET)
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75. Backscattering coefficient accurate model for nanoscale Si-MOSFET transistor
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76. Ion Species Dependence of Relaxation Phenomena of Strained SiGe Layers Formed by Ion-Implantation-Induced Relaxation Technique
    Tomohisa Mizuno, Juria Takehi, Youhki Abe, Hiromu Akamatsu · 2013 · Japanese Journal of Applied Physics
77. Silicon based nano-MOSFET: New materials, new device architectures, and new challenges for device simulation
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78. Closed-form Model of Barrier Height in Bulk MOSFET Including 2D Effects and Electron Statistics
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79. Electronics from the bottom up: An approach to 21st century electronic devices
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80. Extended design window of resonant plasma-wave transistor for terahertz emitter by considering degenerate carrier velocity model with Fermi–Dirac distribution
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81. ovel Aspects ofanoscale Transistors
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82. Performance study of Ballistic and Quasi-Ballistic on Double-Gate MOSFETs 6T SRAM cell
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84. Monte Carlo Simulation of p- and n-channel GOI MOSFETs by Solving the Quantum
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89. Scattering in nanotransistors : A numerical study
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90. Growth, Physics, and Device Applications of InAs-based Nanowires
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92. Device Simulation Using Silvaco ATLAS Tool
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95. BEHAVIORAL MODELLING OF CMOSFETs AND CNTFETs BASED LOW NOISE AMPLIFIER
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96. Scaling properties of GOI MOSFETs in naon scale by full band Monte Carlo simulation
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97. An experimental study on channel backscattering in high-k/metal gate nMOSFETs
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99. Novel aspects of nanoscale transistors
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100. Investigation of scattering mechanism in nano-scale double gate In0.53Ga0.47As nMOSFETs by a deterministic BTE solver
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