Essential physics of carrier transport in nanoscale MOSFETs

Electronic Transport in Mesoscopic Systems

Datta, S. (1995) · doi:10.1017/cbo9780511805776 · Cited by 7,704

Fundamentals of Modern VLSI Devices

Taur, Y., & Ning, T. H. (2009) · Cambridge University Press eBooks · doi:10.1017/cbo9781139195065 · Cited by 2,933

Fundamentals of Carrier Transport

Lundstrom, M. (2000) · Cambridge University Press eBooks · doi:10.1017/cbo9780511618611 · Cited by 1,623

Nanoscale device modeling: the Green’s function method

Datta, S. (2000) · Superlattices and Microstructures · doi:10.1006/spmi.2000.0920 · Cited by 1,219

Ballistic metal-oxide-semiconductor field effect transistor

Natori, K. (1994) · Journal of Applied Physics · doi:10.1063/1.357263 · Cited by 620

Elementary scattering theory of the Si MOSFET

Lundstrom, M. (1997) · IEEE Electron Device Letters · doi:10.1109/55.596937 · Cited by 598

On the performance limits for Si MOSFETs: a theoretical study

Assad, F., Ren, Z., Vasileska, D., Datta, S., & Lundstrom, M. (2000) · IEEE Transactions on Electron Devices · doi:10.1109/16.817590 · Cited by 231

A compact scattering model for the nanoscale double-gate MOSFET

Rahman, A., & Lundstrom, M. (2002) · IEEE Transactions on Electron Devices · doi:10.1109/16.987120 · Cited by 192

A comparison of semiconductor devices for high-speed logic

Solomon, P. M. (1982) · Proceedings of the IEEE · doi:10.1109/proc.1982.12333 · Cited by 191

Alternative Approach to the Solution of Added Carrier Transport Problems in Semiconductors

McKelvey, J. P., Longini, R. L., & Brody, T. P. (1961) · Physical Review · doi:10.1103/physrev.123.51 · Cited by 142

Hysteresis modeling in ballistic carbon nanotube field-effect transistors

Fontana, M., Liu, Y., Moura, M. S., Costa, A., de Almeida, L. A. L., & Paranjape, M. (2014) · Nanotechnology Science and Applications · doi:10.2147/nsa.s58003 · Cited by 5

Multi-Subband Monte Carlo simulations of degradation due to fin thickness fluctuations in FinFETs

Serra, N., Palestri, P., Smit, G. D. J., & Selmi, L. (2009) · Solid-State Electronics · doi:10.1016/j.sse.2008.09.021 · Cited by 5

Analysis of ballistic and quasi-ballistic hole transport properties in germanium nanowires based on an extended “Top of the Barrier” model

Tanaka, H., Suda, J., & Kimoto, T. (2016) · Solid-State Electronics · doi:10.1016/j.sse.2016.04.015 · Cited by 5

MC simulation of strained Si/SiGe devices

Jungemann, C., & MEINERZHAGEN, B. (2004) · IEEE Conference on Electrical Performance of Electronic Packaging and Systems (EPEPS) · doi:10.1109/essderc.2003.1256800 · Cited by 5

Germanium Nanodevices and Technology

Chui, C. O., & Saraswat, K. C. (2007) · Springer eBooks · doi:10.1007/978-3-540-71491-0_13 · Cited by 5

Quasi-ballistic transport in nanowire field-effect transistors

Baccarani, G., Gnani, E., Gnudi, A., & Reggiani, S. (2008) · International Conference on Simulation of Semiconductor Processes and Devices · doi:10.1109/sispad.2008.4648223 · Cited by 5

Some Useful Relations for Analyzing Nanoscale MOSFETs Operating in the Linear RegionPreprint

Lundstrom, M., & Sun, X. (2016) · arXiv (Cornell University) · doi:10.48550/arxiv.1603.03132 · Cited by 5

Conservation Laws at Physical Origins of Universal Mobility in MOSFET Inversion Layers in Consilience with River Flow in a Gravitational FieldPreprint

Shoucair, F. S. (2021) · doi:10.36227/techrxiv.17088419.v1 · Cited by 5

Silicon Nanowire Field-Effect Transistor

Kim, D. M., Kim, B., & Baek, R. (2013) · Springer eBooks · doi:10.1007/978-1-4614-8124-9_4 · Cited by 4

Channel backscattering characteristics of high performance germanium pMOSFETs

Dobbie, A., Jaeger, B. D., Meuris, M., Whall, T. E., Parker, E. H. C., & Leadley, D. R. (2008) · Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon · doi:10.1109/ulis.2008.4527129 · Cited by 4

Calibration of drift-diffusion model in quasi-ballistic transport region for FinFETs

Shen, L., Di, S., Yin, L., Liu, X., & Du, G. (2018) · Science China Information Sciences · doi:10.1007/s11432-017-9315-4 · Cited by 4

Doping engineering to enhance the performance of double-gate pMOSFETs with ultrashort gate length (5 nm)

Khaliq, A., & Zhang, S. (2021) · Journal of Computational Electronics · doi:10.1007/s10825-021-01693-9 · Cited by 4

Quantum kinetic equation for the Wigner function and reduction to the Boltzmann transport equation under discrete impurities

Sano, N. (2021) · Physical review. E · doi:10.1103/physreve.104.014141 · Cited by 4

III–V tri-gate quantum well MOSFET: Quantum ballistic simulation study for 10 nm technology and beyond

Datta, K., & Khosru, Q. D. M. (2015) · Solid-State Electronics · doi:10.1016/j.sse.2015.11.034 · Cited by 4

Quasi-ballistic transport model for top- and back-gated graphene nanoribbon field-effect transistors

Hu, S., Hu, G., Wang, L., Liu, R., & Zheng, L. (2016) · Japanese Journal of Applied Physics · doi:10.7567/jjap.55.04ek01 · Cited by 4

Heat generation due to the Anderson catastrophe in mesoscopic devices

Lebedev, A. V., & Vinokur, V. M. (2020) · Physical review. B./Physical review. B · doi:10.1103/physrevb.102.195111 · Cited by 4

The Evolution of Theory on Drain Current Saturation Mechanism of MOSFETs from the Early Days to the Present Day

Yang, P., Lau, W. S., Wei, S., Lo, V. L., Siah, S. Y., & Ch, L. (2010) · InTech eBooks · doi:10.5772/6873 · Cited by 4

Ballistic Saturation Velocity of Quasi-2D Low-Dimensional Nanoscale Field Effect Transistor (FET)

Saad, I., Ahmadi, M. T., Munawar, A. R., Ismail, R., Arora, V., RUSOP, M., & Soga, T. (2009) · AIP conference proceedings · doi:10.1063/1.3160152 · Cited by 4

Backscattered Electrons from a Drain Region in a Silicon Decanano Diode

Tsutsumi, T., & Tomizawa, K. (2007) · Japanese Journal of Applied Physics · doi:10.1143/jjap.46.6208 · Cited by 4

Criticisms on and comparison of experimental channel backscattering extraction methods

Giusi, G., Crupi, F., & Magnone, P. (2010) · Microelectronic Engineering · doi:10.1016/j.mee.2010.08.024 · Cited by 4

A simple compact model for the junctionless Variable Barrier Transistor (VBT)

Moldovan, O., Lime, F., Nae, B., & Iñı́guez, B. (2013) · Spanish Conference on Electron Devices · doi:10.1109/cde.2013.6481344 · Cited by 4

Two-dimensional quantum effects in “ultimate” nanoscale metal-oxide-semiconductor field-effect transistors

Walls, T. J., & Likharev, K. K. (2008) · Journal of Applied Physics · doi:10.1063/1.3039959 · Cited by 4

Factors affecting performance of CNT FET as a switch in memory cell

Navin, G., & Basavaraj, T. N. (2013) · International Conference on Advanced Nanomaterials & Emerging Engineering Technologies · doi:10.1109/icanmeet.2013.6609376 · Cited by 4

Back-Scattering in Quasi Ballistic NanoMOSFETs: The role of non thermal carrier distributions

Clerc, R., Palestri, P., Selmi, L., & Ghibaudo, G. (2008) · Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon · doi:10.1109/ulis.2008.4527155 · Cited by 4

Analytical Modeling of Ge and Si Double-Gate(DG) NFETs and the Effect of Process Induced Variations (PIV) on Device Performance

Pethe, A. J., Krishnamohan, T., Uchida, K., & Saraswat, K. C. (2004) · Springer eBooks · doi:10.1007/978-3-7091-0624-2_85 · Cited by 4

A comparison between the quasi-ballistic transport model and the conventional velocity saturation model for sub-0.1-μm mos transistors

Yang, P., Lau, W. S., Ho, V., Loh, C. H., Siah, S. Y., & Chan, L. H. (2007) · IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) · doi:10.1109/edssc.2007.4450071 · Cited by 4

Saturation Drain Current analytical modeling of Single Gate Fully Depleted SOI or SON MOSFETs in the Quasi Ballistic Regime of Transport

Ferrier, M., Clerc, R., Lucci, L., Ghibaudo, G., Vandooren, A., Bœuf, F., & Skotnicki, T. (2006) · IEEE International SOI Conference (SOI) · doi:10.1109/soi.2006.284448 · Cited by 4

On the Relationship Between Carrier Mobility and Velocity in Sub-50 nm MOSFETs via Calibrated Monte Carlo Simulation

Nayfeh, O. M., Yu, S., & Antoniadis, D. A. (2004) · Springer eBooks · doi:10.1007/978-3-7091-0624-2_28 · Cited by 4

Electron-Phonon Scattering in Planar MOSFETs: NEGF and Monte Carlo MethodsPreprint

Pal, H. S., Nikonov, D. E., Kim, R., & Lundstrom, M. (2012) · arXiv (Cornell University) · doi:10.48550/arxiv.1209.4878 · Cited by 4

A new unified compact model for quasi-ballistic transport: Application to the analysis of circuit performances of a Double-Gate architecture

Martinie, S., Munteanu, D., Carval, G. L., & Autran, J. (2008) · International Conference on Simulation of Semiconductor Processes and Devices · doi:10.1109/sispad.2008.4648316 · Cited by 4

Modeling of quasi-ballistic transport in nanowire metal-oxide-semiconductor field-effect transistors

Lee, Y., Kakushima, K., Natori, K., & Iwai, H. (2015) · Journal of Applied Physics · doi:10.1063/1.4933287 · Cited by 3

Effects of Quantum Confinement on Electrical Characteristics of 12-nm Silicon-on-Insulator Fin Field-Effect Transistors by Quantum Transport Analysis

Liu, K.-M. (2011) · Japanese Journal of Applied Physics · doi:10.1143/jjap.50.04dc19 · Cited by 3

Analytical Analysis of Ballistic Drift Velocity in Low-dimensional Nano-devices

Saad, I., Riyadi, M. A., Taghi, M., Atfyi, F. M. N. Z., & Arora, V. K. (2010) · Asia International Conference on Mathematical/Analytical Modelling and Computer Simulation · doi:10.1109/ams.2010.121 · Cited by 3

Temperature dependence of ballistic mobility in a metamorphic InGaAs/InAlAs high electron mobility transistor

Lee, J., Gang, S., Jo, Y., Kim, J., Woo, H., Han, J., Kim, H., & Im, H. (2014) · Journal of Applied Physics · doi:10.1063/1.4891730 · Cited by 3

A Study of the Performance of Ballistic Nanoscale MOSFETS Using Classical and Quantum Ballistic Transport Models

Ahmadain, A. A., Roenker, K. P., & Tomko, K. A. (2006) · IEEE Conference on Nanotechnology (IEEE NANO) · doi:10.1109/nano.2006.247555 · Cited by 3

The effects of strain and surface roughness scattering on the quasi-ballistic characteristics of a Ge nanowire p-channel field-effect transistor

Qin, J., Du, G., & Liu, X. (2013) · Chinese Physics B · doi:10.1088/1674-1056/22/10/107104 · Cited by 3

STRAIN EFFECTS ON THE VALENCE BAND OF SILICON: PIEZORESISTANCE IN P-TYPE SILICON AND MOBILITY ENHANCEMENT IN STRAINED SILICON PMOSFET

Wu, K. (2005) · Cited by 3

Emission and absorption of optical phonons in multigate silicon nanowire MOSFETs

Akhavan, N. D., Kranti, A., Ferain, I. P., Lee, C. W., Yan, R., Raza, P., Yu, R., & Colinge, J. P. (2010) · International Workshop on Computational Electronics · doi:10.1109/iwce.2010.5677915 · Cited by 3

Investigation of thermal effects on FinFETs in the quasi-ballistic regime

Yin, L., Shen, L., Di, S., Du, G., & Liu, X. (2018) · Japanese Journal of Applied Physics · doi:10.7567/jjap.57.04fd14 · Cited by 3

Process Optimizations for Ge-On-Si Depletion Mode Transistors Using Mesa Architecture

Choudhary, S. K., Schwarz, D., Funk, H. S., Sharma, K. P., Sharma, S. K., & Schulze, J. (2022) · IEEE International Symposium on Semiconductor Manufacturing conference proceedings · doi:10.1109/issm55802.2022.10027013 · Cited by 3

Exploration of Electronic Structure and Optical Properties Hafnium (IV) Oxide and Its 12% Si, Ge and Sn with Material Data Analysis by Computational Methods

Chakma, U., Kumer, A., Hossain, T., Hossain, M. S., Alam, M. M., Khandakar, N. J., Islam, M. S., Shaikh, R., & Ali, M. H. (2023) · Lecture notes in electrical engineering · doi:10.1007/978-981-19-8032-9_18 · Cited by 3

Ballisticity Saturation by Unscalable Reflections

Pourghaderi, M. A., Ilatikhameneh, H., Pham, A.-T., Park, H.-H., Lim, J., Jiang, Z., Wang, J., Jin, S., Kim, J., Kwon, U., et al. (2020) · IEEE Electron Device Letters · doi:10.1109/led.2020.2993238 · Cited by 3

Kinetic investigation of electron–electron scattering in nanometer-scale metal- oxide-semiconductor field-effect transistors

Fixel, D., & Hitchon, W. N. G. (2008) · Semiconductor Science and Technology · doi:10.1088/0268-1242/23/3/035014 · Cited by 3

Suppression of Effects of Backscattering from Drain Region on Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistor Characteristics

Tsutsumi, T., & Tomizawa, K. (2008) · Japanese Journal of Applied Physics · doi:10.1143/jjap.47.4980 · Cited by 3

Role of the gate in ballistic nanowire SOI MOSFETs

Mangla, A., Sallèse, J.-M., Sampedro, C., Gamiz, F., & Enz, C. (2015) · Solid-State Electronics · doi:10.1016/j.sse.2015.02.010 · Cited by 3

Drive current of ultrathin Ge‐on‐insulator n‐channel MOSFETs

Azuma, Y., Mori, T., & Tsuchiya, H. (2008) · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · doi:10.1002/pssc.200779219 · Cited by 3

Deterministic solution of the 1D Boltzmann transport equation: Application to the study of current transport in nanowire FETs

Gnani, E., Gnudi, A., Reggiani, S., & Baccarani, G. (2011) · Microelectronics Journal · doi:10.1016/j.mejo.2011.07.010 · Cited by 3

Comprehensive Study of Quasi-Ballistic Transport in High-$\kappa$/Metal Gate nMOSFETs

Sagong, H. C., Kang, C. Y., Sohn, C.-W., Jeon, K., Jeong, E.-Y., Choi, D.-Y., Baek, C., Lee, J., Lee, J. C., & Jeong, Y. (2011) · IEEE Electron Device Letters · doi:10.1109/led.2011.2163920 · Cited by 3

Experimental Investigation of Quasi-Ballistic Carrier Transport Characteristics in 10-nm Scale MOSFETs

Lee, J., Jeon, J., Kim, J., Park, B., Lee, J. D., & Shin, H. (2010) · IEEE Transactions on Nanotechnology · doi:10.1109/tnano.2010.2091421 · Cited by 3

On the Mean Free Path for Backscattering in $k_{B}T$ Layer of Bulk Nano-MOSFETs

Chen, M., Lu, L.-F., & Hsu, C. (2008) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2008.2006532 · Cited by 3

Advanced Germanium MOS Devices and Technology

Saraswat, K. C. (2006) · IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) · doi:10.1109/edssc.2005.1635216 · Cited by 3

Simulation and investigations on semiconductor materials and devices with surround gate geometry for high performance and low power nano scale applications

Singh, B., Prasad, B., & Kumar, D. (2020) · IOP Conference Series Materials Science and Engineering · doi:10.1088/1757-899x/804/1/012033 · Cited by 3

Ballistic Mobility and Injection Velocity in Nanoscale InGaAs FinFETs

Cai, X., Vardi, A., Grajal, J., & del Alamo, J. A. (2020) · Technical digest - International Electron Devices Meeting/Technical digest · doi:10.1109/iedm13553.2020.9371925 · Cited by 3

Convergence properties of density gradient quantum corrections in 3D ensemble Monte Carlo Simulations

Riddet, C., & Asenov, A. (2008) · International Conference on Simulation of Semiconductor Processes and Devices · doi:10.1109/sispad.2008.4648287 · Cited by 3

A simple compact model to analyze the impact of ballistic and quasi-ballistic transport on ring oscillator performance

Martinie, S., Carval, G. L., Munteanu, D., Jaud, M.-A., & Autran, J. (2008) · IEEE International Conference on IC Design and Technology (ICICDT) · doi:10.1109/icicdt.2008.4567294 · Cited by 3

RF Performance Potential of Strained-Si, In0.53Ga0.47As, and GaSb Double-Gate Ultra-Thin-Body n-FETs with Lg=10.7 nm

Luisier, M. (2012) · Technical digest -- IEEE Compound Semiconductor Integrated Circuit Symposium · doi:10.1109/csics.2012.6340068 · Cited by 2

Enhancement of ballistic transport in an AlGaAs∕InGaAs high electron mobility transistor at low temperatures

Kim, N., Kim, Y., Kang, S., Jung, K., Jung, W., Im, H., Kim, H., Rhee, J. K., & Shin, D.-H. (2007) · Applied Physics Letters · doi:10.1063/1.2719231 · Cited by 2

Design and Self-Consistent Schrodinger-Poisson Model Simulation of Ultra-Thin Si-Channel Nanowire FET

Verma, C., & Singh, J. (2021) · Silicon · doi:10.1007/s12633-021-01388-7 · Cited by 2

Experimental demonstration of performance enhancement on highly-scaled bulk nFinFETs with novel carrier transport engineering

Han, M.-H., Sun, Y.-J., Lin, M., Yamamoto, T., & Yang, S.-H. (2015) · International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) · doi:10.1109/vlsi-tsa.2015.7117570 · Cited by 2

Analytical Model of Subthreshold Drain Current Characteristics of Ballistic Silicon Nanowire Transistors

Xu, W., Wong, H., & Iwai, H. (2015) · Advances in Condensed Matter Physics · doi:10.1155/2015/605987 · Cited by 2

Characterization of nanotransistors in a semiempirical model

Wulf, U., Kučera, J., Richter, H., Wiatr, M., & Höntschel, J. (2015) · Thin Solid Films · doi:10.1016/j.tsf.2015.09.041 · Cited by 2

Modeling of quantum ballistic transport in double-gate devices with ultra-thin oxides

Munteanu, D., Autran, J., Decarre, E., & Dinescu, R. (2003) · Journal of Non-Crystalline Solids · doi:10.1016/s0022-3093(03)00203-5 · Cited by 2

Electrical Extractions of One Dimensional Doping Profile and Effective Mobility for Metal–Oxide–Semiconductor Field-Effect Transistors

Park, H., Lee, K.-S., Baek, D., Kang, J., So, B., Kwon, S. I., & Choi, B. (2011) · Japanese Journal of Applied Physics · doi:10.1143/jjap.50.01aa01 · Cited by 2

Novel Source Heterojunction Structures with Relaxed-/Strained-Layers for Quasi-Ballistic CMOS Transistors

Mizuno, T., Hasegawa, M., & Sameshima, T. (2011) · Key engineering materials · doi:10.4028/www.scientific.net/kem.470.72 · Cited by 2

Impact of back biasing in ultra short channel UTBB SOI nMOSFETs

Zhao, K., Lu, T., Du, G., Liu, X., & Zhang, X. (2013) · International Conference on Simulation of Semiconductor Processes and Devices · doi:10.1109/sispad.2013.6650631 · Cited by 2

MODELING ELECTRON TRANSPORT IN MOSFET DEVICES: EVOLUTION AND STATE OF THE ART

Abramo, A. (2003) · International Journal of High Speed Electronics and Systems · doi:10.1142/s0129156403002009 · Cited by 2

Characterization of silicon nanowire transistor as a temperature nano-sensor device

Hashim, Y., & Sidek, O. (2012) · IEEE International Conference on Control System, Computing and Engineering · doi:10.1109/iccsce.2012.6487105 · Cited by 2

A simple analytical Variable Barrier Transistor drain current model

Moldovan, O., Lime, F., Iñı́guez, B., & Barraud, S. (2015) · Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon · doi:10.1109/ulis.2015.7063826 · Cited by 2

Simulation of low Schottky barrier MOSFETs using an improved Multi-subband Monte Carlo model

Gudmundsson, V., Palestri, P., Hellström, P., Selmi, L., & Östling, M. (2012) · Solid-State Electronics · doi:10.1016/j.sse.2012.07.024 · Cited by 2

Device simulation for decananometer MOSFETs

SANGIORGI, E., Palestri, P., Esseni, D., Fiegna, C., Abramo, A., & Selmi, L. (2003) · Materials Science in Semiconductor Processing · doi:10.1016/s1369-8001(03)00076-3 · Cited by 2

RF performance limits of ballistic Si field-effect transistors

Pan, A., & Chui, C. O. (2014) · IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) · doi:10.1109/sirf.2014.6828529 · Cited by 2

Calibrate MOSFET Micro-Stress Sensors for Electronic Packaging

Chung, H., Tang, C.-P., Chao, Y.-C., Tseng, K.-F., & Lwo, B.-J. (2008) · IEEE Electronics Packaging Technology Conference (EPTC) · doi:10.1109/eptc.2008.4763507 · Cited by 2

Selection of gate length and gate bias to make nanoscale metal–oxide-semiconductor transistors less sensitive to both statistical gate length variation and temperature variation

Yang, P., Lau, W. S., Lai, S. W., Lo, V. L., Siah, S. Y., & Chan, L. H. (2010) · Solid-State Electronics · doi:10.1016/j.sse.2010.06.026 · Cited by 2

Analysis of Quantum Effects on Backscattering from Drain Region of Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistor

Tsutsumi, T., & Tomizawa, K. (2009) · Japanese Journal of Applied Physics · doi:10.1143/jjap.48.06fd07 · Cited by 2

Compact models for double gate hetero gate dielectric nano scale Tunnel FET

Bhowmick, B., Baishya, S., & Joishy, C. (2013) · International Conference on Signal Processing, Computing and Control (ISPCC) · doi:10.1109/ispcc.2013.6663448 · Cited by 2

PERFORMANCE LIMITATIONS OF Si CMOS AND ALTERNATIVES FOR NANOELECTRONICS

Saraswat, K. C., Chui, C. O., KAPUR, P., Krishnamohan, T., Nayfeh, A. M., Okyay, A. K., & Shenoy, R. S. (2006) · International Journal of High Speed Electronics and Systems · doi:10.1142/s0129156406003606 · Cited by 2

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Wang, R., Zhuge, J., Huang, R., Zhang, L., Kim, D., Zhang, X., Park, D., & Wang, Y. (2008) · IEEE International Conference on Solid-State and Integrated Circuit Technology · doi:10.1109/icsict.2008.4734473 · Cited by 2

Maximum drive current scaling properties of strained Si NMOS in the deca-nanometer regime

Jungemann, C., & MEINERZHAGEN, B. (2003) · International Conference on Simulation of Semiconductor Processes and Devices · doi:10.1109/sispad.2003.1233669 · Cited by 2

Nanotransistors: A Bottom-Up View

Lundstrom, M. (2006) · European Solid-State Device Research Conference · doi:10.1109/essder.2006.307633 · Cited by 2

A Design Evaluation of Strained Si-SiGe on Insulator (SSOI) Based Sub-50 nm nMOSFETs

Nawaz, M. I., & Östling, M. (2005) · JSTS Journal of Semiconductor Technology and Science · Cited by 2

Performance comparison of Si, III–V double-gate n-type MOSFETs by deterministic Boltzmann transport equation solver

Di, S., Shen, L., Chang, P., Zhao, K., Lu, T., Du, G., & Liu, X. (2017) · Japanese Journal of Applied Physics · doi:10.7567/jjap.56.04cd08 · Cited by 2

Analytical model and sensitivity analysis of a gate-engineered dielectric modulated junctionless nanowire transistor-based biosensor

Chakraborty, A., Sarkar, A., & Sarkar, A. (2021) · Elsevier eBooks · doi:10.1016/b978-0-323-85172-5.00008-3 · Cited by 2

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Andrić, S., Kilpi, O., Ram, M. S., Svensson, J., Lind, E., & Wernersson, L. (2022) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2022.3168241 · Cited by 2

First principle and deep learning based switching property prediction of optical bio-molecular switch

Dey, D., Roy, P., & De, D. (2024) · Microsystem Technologies · doi:10.1007/s00542-024-05627-w · Cited by 2

Simplified theory of carrier back-scattering in semiconducting carbon nanotubes: A Kane’s model approach

Bhattacharya, S., & Mahapatra, S. (2010) · Journal of Applied Physics · doi:10.1063/1.3374687 · Cited by 2

Compact Modeling and Short-Channel Effects of Nanowire MOS Transistors (Invited)

Wong, H. (2018) · IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA) · doi:10.1109/cicta.2018.8705955 · Cited by 2

A new approach to model the I∼V characteristics for nanoscale MOSFETs

Pattanaik, M., & Banerjee, S. (2004) · International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) · doi:10.1109/vtsa.2003.1252604 · Cited by 2

Statistical Circuit Simulations: From ‘Atomistic’ Compact Models to Statistical Standard Cell Characterisation

Kamsani, N. A. (2012) · Enlighten: Theses (The University of Glasgow) · Cited by 2

One‐Dimensional Field‐Effect Transistors

Knoch, J. (2012) · doi:10.1002/9781118310342.ch24 · Cited by 2

Ballistic Transport in SiGe and Strained-Si MOSFETs

Curatola, G., & Iannaccone, G. (2003) · Journal of Computational Electronics · doi:10.1023/b:jcel.0000011443.60531.10 · Cited by 2

Quasi Ballistic Transport in Advanced MOSFET Devices

Clerc, R., Palestri, P., Rafhay, Q., Ferrier, M., Pananakakis, G., Ghibaudo, G., & Selmi, L. (2007) · CAS proceedings · doi:10.1109/smicnd.2007.4519642 · Cited by 2

METS: A Metric for Electro-Thermal Sensitivity, and Its Application To FinFETs

Swahn, B., & Hassoun, S. (2006) · International Symposium on Quality Electronic Design (ISQED) · doi:10.1109/isqed.2006.86 · Cited by 2

Germanium

Saraswat, K. C. (2023) · doi:10.1002/9781394202478.ch36 · Cited by 2

Parameter calibration of drift-diffusion model in quasi-ballisitc transport region with Monte Carlo method

Shen, L., Di, S., Yin, L., Liu, X., & Du, G. (2017) · Silicon Nanoelectronics Workshop (SNW) · doi:10.23919/snw.2017.8242303 · Cited by 1

Quasi-ballistic transport model for nanoscale MOSFETs: learnings from a diffusive conductor

Lee, J. U. (2021) · Japanese Journal of Applied Physics · doi:10.35848/1347-4065/abeabd · Cited by 1

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