Cited by 554Advancements in Semiconductor Devices and Circuit DesignSemiconductor materials and devicesQuantum and electron transport phenomena

The DOI matches its Crossref record; 27 of the 29 references it cites were found in a registry or an index.

Essential physics of carrier transport in nanoscale MOSFETs

Lundstrom, M., Ren, Z.·2002·IEEE Transactions on Electron Devices

DOI 10.1109/16.974760

Open this paper in CoChat — free account

Abstract

The device physics of nanoscale MOSFETs is explored by numerical simulations of a model transistor. The physics of charge control, source velocity saturation due to thermal injection, and scattering in ultrasmall devices are examined. The results show that the essential physics of nanoscale MOSFETs can be understood in terms of a conceptually simple scattering model.

Integrity signals

Registry

Crossref · 10.1109/16.974760

Cites

27 of 27 references verified0 citation errors · 0 not checkable

Statistics

Recomputing p-values needs the paper’s full text.

Claims the paper makes

We couldn’t retrieve this paper’s full text, so its claims and self-check weren’t run. The registry and citation checks still apply.

Claims other papers make about this one

Each is checked against this paper’s own text: does it say what the citing paper says it does?

Electronic Transport in Mesoscopic Systems
Datta, S. (1995) · doi:10.1017/cbo9780511805776 · Cited by 7,704
Fundamentals of Modern VLSI Devices
Taur, Y., & Ning, T. H. (2009) · Cambridge University Press eBooks · doi:10.1017/cbo9781139195065 · Cited by 2,933
Fundamentals of Carrier Transport
Lundstrom, M. (2000) · Cambridge University Press eBooks · doi:10.1017/cbo9780511618611 · Cited by 1,623
Self-citation
Nanoscale device modeling: the Green’s function method
Datta, S. (2000) · Superlattices and Microstructures · doi:10.1006/spmi.2000.0920 · Cited by 1,219
Ballistic metal-oxide-semiconductor field effect transistor
Natori, K. (1994) · Journal of Applied Physics · doi:10.1063/1.357263 · Cited by 620
Elementary scattering theory of the Si MOSFET
Lundstrom, M. (1997) · IEEE Electron Device Letters · doi:10.1109/55.596937 · Cited by 598
Self-citation
On the performance limits for Si MOSFETs: a theoretical study
Assad, F., Ren, Z., Vasileska, D., Datta, S., & Lundstrom, M. (2000) · IEEE Transactions on Electron Devices · doi:10.1109/16.817590 · Cited by 231
Self-citation
A compact scattering model for the nanoscale double-gate MOSFET
Rahman, A., & Lundstrom, M. (2002) · IEEE Transactions on Electron Devices · doi:10.1109/16.987120 · Cited by 192
Self-citation
A comparison of semiconductor devices for high-speed logic
Solomon, P. M. (1982) · Proceedings of the IEEE · doi:10.1109/proc.1982.12333 · Cited by 191
Alternative Approach to the Solution of Added Carrier Transport Problems in Semiconductors
McKelvey, J. P., Longini, R. L., & Brody, T. P. (1961) · Physical Review · doi:10.1103/physrev.123.51 · Cited by 142

Flagged first, then by citations

Show all 29 references

2 of the 29 references couldn’t be matched to a known paper.

Research works printed but not linked: 8

Javanovic, 7th Int. Worklshop Computational Electronics
Johnson, 1973, The insulated-gate field-effect transistor—A bipolar transistor in disguise, RCA Rev., 34, 80
Rahman, Toward a compact scattering model for nanoscale MOSFETs
Assad, 1999, Performance limits of Si MOSFETs, IEDM Tech. Dig., 547
Timp, 1999, The ballistic nanotransistor, IEDM Tech. Dig., 55
Rhew, 2001, Numerical Study of a Ballistic MOSFET
Bude, 1999, private communication
Rhew, 2001, private communication

Sorted by citations

Items 101–200 of 554

Investigation of Strain Engineering in FinFETs Comprising Experimental Analysis and Numerical Simulations
Conzatti, F., Serra, N., Esseni, D., Michielis, M. D., Paussa, A., Palestri, P., Selmi, L., Thomas, S., Whall, T. E., Leadley, D. R., et al. (2011) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2011.2119320 · Cited by 39
Junctionless versus inversion-mode lateral semiconductor nanowire transistors
Veloso, A., Matagne, P., Simoen, E. R., Kaczer, B., Eneman, G., Mertens, H. W., Yakimets, D., Parvais, B., & Mocuta, D. (2018) · Journal of Physics Condensed Matter · doi:10.1088/1361-648x/aad7c7 · Cited by 39
Gate sizing: finFETs vs 32nm bulk MOSFETs
Swahn, B., & Hassoun, S. (2006) · ACM/IEEE Design Automation Conference (DAC) · doi:10.1109/dac.2006.229286 · Cited by 39
High frequency III–V nanowire MOSFETs
Lind, E. (2016) · Semiconductor Science and Technology · doi:10.1088/0268-1242/31/9/093005 · Cited by 38
Analog performance of the nanoscale double-gate metal-oxide-semiconductor field-effect-transistor near the ultimate scaling limits
Jiménez, D., Iñı́guez, B., Suñé, J., & Sáenz, J. J. (2004) · Journal of Applied Physics · doi:10.1063/1.1778485 · Cited by 38
On the Interpretation of Ballistic Injection Velocity in Deeply Scaled MOSFETs
Liu, Y., Luisier, M., Majumdar, A., Antoniadis, D. A., & Lundstrom, M. (2012) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2012.2183599 · Cited by 38
Self-citation
Benchmarking of MoS2FETs With Multigate Si-FET Options for 5 nm and Beyond
Agarwal, T., Yakimets, D., Raghavan, P., Radu, I. P., Thean, A., Heyns, M., & Dehaene, W. (2015) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2015.2491021 · Cited by 37
Ballistic calculation of nonequilibrium Green's function in nanoscale devices using finite element method
Kurniawan, O., Bai, P., & Li, E. (2009) · Journal of Physics D Applied Physics · doi:10.1088/0022-3727/42/10/105109 · Cited by 36
Monolayer WSi2N4 : A promising channel material for sub-5-nm-gate homogeneous CMOS devices
Li, Y., Qi, C., Zhou, X., Xu, L., Li, Q., Liu, S., Yang, C., Liu, S., Xu, L., Dong, J., et al. (2023) · Physical Review Applied · doi:10.1103/physrevapplied.20.064044 · Cited by 35
Bias-Dependent Electron Velocity Extracted From N-Polar GaN Deep Recess HEMTs
Romanczyk, B., Guidry, M., Zheng, X., Li, H., Ahmadi, E., Keller, S., & Mishra, U. K. (2020) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2020.2973081 · Cited by 35
Device physics at the scaling limit: what matters? [MOSFETs]
Lundstrom, M. (2004) · Technical digest - International Electron Devices Meeting/Technical digest · doi:10.1109/iedm.2003.1269398 · Cited by 35
Self-citation
2-D Analytical Modeling and Simulation of Dual Material, Double Gate, Gate Stack Engineered, Junctionless MOSFET based Biosensor with Enhanced Sensitivity
Kumari, M., Singh, N. K., Sahoo, M., & Rahaman, H. (2021) · Silicon · doi:10.1007/s12633-021-01223-z · Cited by 33
Strain-Engineered MOSFETs
Maiti, T. K., & Maiti, T. K. (2012) · Directory of Open access Books (OAPEN Foundation) · Cited by 33
Monte Carlo Simulation of p- and n-channel GOI MOSFETs by Solving the Quantum Boltzmann Equation
Du, G., Liu, X., Xia, Z., Kang, J., Wang, Y., Han, R. Q., Yu, H. Y., & Kwong, D. L. (2005) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2005.856806 · Cited by 33
A Landauer Approach to Nanoscale MOSFETs
Lundstrom, M., & Rhew, J.-H. (2002) · Journal of Computational Electronics · doi:10.1023/a:1022949306215 · Cited by 33
Self-citation
Characteristics of the Series Resistance Extracted From Si Nanowire FETs Using the $Y$-Function Technique
Baek, R., Baek, C., Jung, S., Yeoh, Y. Y., Kim, D., Lee, J., Kim, D. M., & Jeong, Y. (2009) · IEEE Transactions on Nanotechnology · doi:10.1109/tnano.2009.2028024 · Cited by 33
Perspective on field‐effect spin‐transistors
Sugahara, S. (2006) · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · doi:10.1002/pssc.200672894 · Cited by 33
Quantum transport in ultra-scaled double-gate MOSFETs: A Wigner function-based Monte Carlo approach
Sverdlov, V. A., Gehring, A., Kosina, H., & Selberherr, S. (2005) · Solid-State Electronics · doi:10.1016/j.sse.2005.07.013 · Cited by 32
Thermal phenomena in nanoscale transistors
Pop, E., & Goodson, K. E. (2004) · I-THERM :/I-THERM - Intersociety Conference on Thermal Phenomena in Electronic Systems · doi:10.1109/itherm.2004.1319147 · Cited by 32
Influence of Elastic and Inelastic Phonon Scattering on the Drive Current of Quasi-Ballistic MOSFETs
Tsuchiya, H., & Takagi, S. (2008) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2008.927384 · Cited by 31
Nanowire Transistors
Colinge, J. P., & Greer, J. C. (2016) · Cambridge University Press eBooks · doi:10.1017/cbo9781107280779 · Cited by 79
Electrical Properties of Vertical InAs/InGaAs Heterostructure MOSFETs
Kilpi, O., Svensson, J., Lind, E., & Wernersson, L. (2018) · IEEE Journal of the Electron Devices Society · doi:10.1109/jeds.2018.2878659 · Cited by 30
Impact of source-to-drain tunnelling on the scalability of arbitrary oriented alternative channel material nMOSFETs
Rafhay, Q., Clerc, R., Ghibaudo, G., & Pananakakis, G. (2008) · Solid-State Electronics · doi:10.1016/j.sse.2008.06.035 · Cited by 30
Modeling of Thermoelectric Properties of Semi-Conductor Thin Films With Quantum and Scattering Effects
Bulusu, A., & Walker, D. G. (2006) · ASME Journal of Heat and Mass Transfer · doi:10.1115/1.2709962 · Cited by 30
Theoretical foundations of the quantum drift-diffusion and density-gradient models
Baccarani, G., Gnani, E., Gnudi, A., Reggiani, S., & RUDAN, M. (2007) · Solid-State Electronics · doi:10.1016/j.sse.2007.10.051 · Cited by 30
Investigation of strained Si/SiGe devices by MC simulation
Jungemann, C., Subba, N., Goo, J.-S., Riccobene, C., Xiang, Q., & MEINERZHAGEN, B. (2004) · Solid-State Electronics · doi:10.1016/j.sse.2004.02.016 · Cited by 30
Quantized Conduction and High Mobility in Selectively Grown InxGa1–xAs Nanowires
Zota, C. B., Lindgren, D., Wernersson, L., & Lind, E. (2015) · ACS Nano · doi:10.1021/acsnano.5b03318 · Cited by 29
Impact of Ballistic and Quasi-Ballistic Transport on Performances of Double-Gate MOSFET-Based Circuits
Martinie, S., Carval, G. L., Munteanu, D., Soliverès, S., & Autran, J. (2008) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2008.927656 · Cited by 29
Analytic compact model of ballistic and quasi-ballistic transport for cylindrical gate-all-around MOSFET including drain-induced barrier lowering effect
Cheng, H., Uno, S., & Nakazato, K. (2014) · Journal of Computational Electronics · doi:10.1007/s10825-014-0659-8 · Cited by 28
Kinetic Velocity Model to Account for Ballistic Effects in the Drift-Diffusion Transport Approach
Penzin, O., Smith, L., Erlebach, A., Choi, M., & Lee, K.-H. (2017) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2017.2751968 · Cited by 28
Wigner Function-Based Simulation of Quantum Transport in Scaled DG-MOSFETs Using a Monte Carlo Method
Gehring, A., & Kosina, H. (2005) · Journal of Computational Electronics · doi:10.1007/s10825-005-7109-6 · Cited by 28
Device Simulation Using Silvaco ATLAS Tool
Sarkar, A. (2013) · CRC Press eBooks · doi:10.1201/b14860-6 · Cited by 27
Modeling and optimization of group IV and III–V FinFETs and nano-wires
Moroz, V., Smith, L., Huang, J., Choi, M., Ma, T., Liu, J., Zhang, Y., Lin, X., Kawa, J., & Saad, Y. (2014) · Technical digest - International Electron Devices Meeting/Technical digest · doi:10.1109/iedm.2014.7047004 · Cited by 27
Compact Modeling of Quasi-Ballistic Silicon Nanowire MOSFETs
Natori, K. (2011) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2011.2172612 · Cited by 27
Si nanowire FET and its modeling
Iwai, H., Natori, K., Shiraishi, K., Iwata, J., Oshiyama, A., Yamada, K., Ohmori, K., Kakushima, K., & Ahmet, P. (2011) · Science China Information Sciences · doi:10.1007/s11432-011-4220-0 · Cited by 26
Holistic technology optimization and key enablers for 7nm mobile SoC
Song, S. C., Xu, J., Mojumder, N. N., Rim, K., Yang, D., Bao, J., Zhu, J. F., Wang, J., Badaroglu, M., Machkaoutsan, V., et al. (2015) · Symposium on VLSI Technology · doi:10.1109/vlsit.2015.7223646 · Cited by 25
2-D analytical modeling for electrostatic potential and threshold voltage of a dual work function gate Schottky barrier MOSFET
Kumar, P., & Bhowmick, B. (2017) · Journal of Computational Electronics · doi:10.1007/s10825-017-1011-x · Cited by 25
Analytical computation of electrical parameters in GAAQWT and CNTFET with identical configuration using NEGF method
Deyasi, A., & Sarkar, A. (2018) · International Journal of Electronics · doi:10.1080/00207217.2018.1494339 · Cited by 25
Sub-20-nm Electron Devices
Likharev, K. K. (2003) · Elsevier eBooks · doi:10.1016/b978-012507060-7/50009-x · Cited by 25
Emission–Diffusion Theory of the MOSFET
Lundstrom, M., Datta, S., & Sun, X. (2015) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2015.2481886 · Cited by 24
Self-citation
Single suspended InGaAs nanowire MOSFETs
Zota, C. B., Wernersson, L., & Lind, E. (2015) · Technical digest - International Electron Devices Meeting/Technical digest · doi:10.1109/iedm.2015.7409808 · Cited by 24
Gate-all-around technology: Taking advantage of ballistic transport?
Huguenin, J.-L., Bidal, G., Denorme, S., Fleury, D., Loubet, N., Pouydebasque, A., Perreau, P., Leverd, F., Barnola, S., Beneyton, R., et al. (2010) · Solid-State Electronics · doi:10.1016/j.sse.2010.04.029 · Cited by 24
Holistic technology optimization and key enablers for 7nm mobile SoC
Song, S. C., Xu, J., Mojumder, N. N., Rim, K., Yang, D., Bao, J., Zhu, J., Wang, J., Badaroglu, M., Machkaoutsan, V., et al. (2015) · Symposium on VLSI Circuits · doi:10.1109/vlsic.2015.7231373 · Cited by 24
Physics of carrier-transport mechanisms and ultra-small scale phenomena for theoretical modelling of nanometer MOS transistors from diffusive to ballistic regimes of operation
Khanna, V. K. (2004) · Physics Reports · doi:10.1016/j.physrep.2004.04.003 · Cited by 24
One-flux theory of a nonabsorbing barrier
Gildenblat, G. S. (2002) · Journal of Applied Physics · doi:10.1063/1.1477601 · Cited by 24
Analysis of the Performance of n-Type FinFETs With Strained SiGe Channel
Lizzit, D., Palestri, P., Esseni, D., Revelant, A., & Selmi, L. (2013) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2013.2258926 · Cited by 23
An optoelectronic band-to-band tunnel transistor for near-infrared sensing applications: Device physics, modeling, and simulation
Gupta, P. S., Rahaman, H., Sinha, K., & Chattopadhyay, S. (2016) · Journal of Applied Physics · doi:10.1063/1.4961426 · Cited by 23
High-Speed Source-Heterojunction-MOS-Transistor (SHOT) Utilizing High-Velocity Electron Injection
Mizuno, T., Sugiyama, N., Tezuka, T., Moriyama, Y., Nakaharai, S., Maeda, T., & Takagi, S. (2005) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2005.859591 · Cited by 23
Separation of Channel Backscattering Coefficients in Nanoscale MOSFETs
Chen, M.-J., Huang, H., Chou, Y.-C., Chen, R.-T., Tseng, Y.-T., Chen, P., & Diaz, C. H. (2004) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2004.833586 · Cited by 23
Two-Parameter Quasi-Ballistic Transport Model for Nanoscale Transistors
Lee, J. U., Cuduvally, R., Dhakras, P. A., Nguyen, P., & Hughes, H. L. (2019) · Scientific Reports · doi:10.1038/s41598-018-36692-7 · Cited by 22
Fin shape fluctuations in FinFET: Correlation to electrical variability and impact on 6-T SRAM noise margins
Baravelli, E., Marchi, L. D., & Speciale, N. (2009) · Solid-State Electronics · doi:10.1016/j.sse.2009.09.015 · Cited by 22
A physics‐based threshold voltage model for hetero‐dielectric dual material gate Schottky barrier MOSFET
Kumar, P., & Bhowmick, B. (2018) · International Journal of Numerical Modelling Electronic Networks Devices and Fields · doi:10.1002/jnm.2320 · Cited by 22
DFT based estimation of CNT parameters and simulation-study of GAA CNTFET for nano scale applications
Singh, B., Prasad, B., & Kumar, D. (2020) · Materials Research Express · doi:10.1088/2053-1591/ab6924 · Cited by 22
Detailed heat generation simulations via the Monte Carlo method
Pop, E., Dutton, R. W., & Goodson, K. E. (2003) · International Conference on Simulation of Semiconductor Processes and Devices · doi:10.1109/sispad.2003.1233652 · Cited by 22
An improved empirical approach to introduce quantization effects in the transport direction in multi-subband Monte Carlo simulations
Palestri, P., Lucci, L., Tos, S. D., Esseni, D., & Selmi, L. (2010) · Semiconductor Science and Technology · doi:10.1088/0268-1242/25/5/055011 · Cited by 21
Simulation of “Ab Initio” Quantum Confinement Scattering in UTB MOSFETs Using Three-Dimensional Ensemble Monte Carlo
Riddet, C., Alexander, C. L., Brown, A. R., Roy, S., & Asenov, A. (2010) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2010.2095422 · Cited by 21
The MOSFET Revisited: Device Physics and Modeling at the Nanoscale
Lundstrom, M. (2006) · IEEE International SOI Conference (SOI) · doi:10.1109/soi.2006.284404 · Cited by 21
Self-citation
Work function optimization for enhancement of sensitivity of dual-material (DM), double-gate (DG), junctionless MOSFET-based biosensor
Kumari, M., Singh, N. K., Sahoo, M., & Rahaman, H. (2021) · Applied Physics A · doi:10.1007/s00339-020-04256-0 · Cited by 21
Complementary Symmetry Nanowire Logic Circuits: Experimental Demonstrations and in Silico Optimizations
Sheriff, B. A., Wang, D., Heath, J. R., & Kurtin, J. N. (2008) · ACS Nano · doi:10.1021/nn800025q · Cited by 21
Modeling of ballistic nanoscale metal-oxide-semiconductor field effect transistors
Fiori, G., & Iannaccone, G. (2002) · Applied Physics Letters · doi:10.1063/1.1519349 · Cited by 21
Molecular Conduction: Paradigms and Possibilities
Ghosh, A. W., & Datta, S. (2002) · Journal of Computational Electronics · doi:10.1023/a:1022961608941 · Cited by 21
Emission and absorption of optical phonons in Multigate Silicon Nanowire MOSFETs
Akhavan, N. D., Ferain, I. P., Yu, R., Razavi, P., & Colinge, J. P. (2012) · Journal of Computational Electronics · doi:10.1007/s10825-012-0411-1 · Cited by 20
Performance and Reliability of Strained-Silicon nMOSFETs With SiN Cap Layer
Giusi, G., Crupi, F., Simoen, E., Eneman, G., & Jurczak, M. (2007) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2006.887198 · Cited by 20
Will strain be useful for 10nm quasi-ballistic FDSOI devices? An experimental study
Barral, V., Poiroux, T., Rochette, F., Vinet, M., Barraud, S., Faynot, O., Tosti, L., Andrieu, F., Cassé, M., Previtali, B., et al. (2007) · Symposium on VLSI Technology · doi:10.1109/vlsit.2007.4339754 · Cited by 20
The impact of defect scattering on the quasi-ballistic transport of nanoscale conductors
Esqueda, I. S., Cress, C. D., Cao, Y. K., Che, Y., Fritze, M., & Zhou, C. (2015) · Journal of Applied Physics · doi:10.1063/1.4913779 · Cited by 19
Conventional Technological Boosters for Injection Velocity in Ultrathin-Body MOSFETs
Ferrier, M., Clerc, R., Lucci, L., Rafhay, Q., Pananakakis, G., Ghibaudo, G., Bœuf, F., & Skotnicki, T. (2007) · IEEE Transactions on Nanotechnology · doi:10.1109/tnano.2007.907846 · Cited by 19
The Monte Carlo approach to transport modeling in deca-nanometer MOSFETs
SANGIORGI, E., Palestri, P., Esseni, D., Fiegna, C., & Selmi, L. (2008) · Solid-State Electronics · doi:10.1016/j.sse.2008.04.007 · Cited by 19
On the numerical aspects of deterministic multisubband device simulations for strained double gate PMOSFETs
Pham, A.-T., Jungemann, C., & MEINERZHAGEN, B. (2009) · Journal of Computational Electronics · doi:10.1007/s10825-009-0301-3 · Cited by 19
Detailed Modeling of Sub-100-nm MOSFETs Based on SchrÖdinger DD Per Subband and Experiments and Evaluation of the Performance Gap to Ballistic Transport
Curatola, G., Doornbos, G., Loo, R., Ponomarev, Y. V., & Iannaccone, G. (2005) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2005.852722 · Cited by 19
New Solution to High-Field Transport in Semiconductors: II. Velocity Saturation and Ballistic Transmission
Natori, K. (2009) · Japanese Journal of Applied Physics · doi:10.1143/jjap.48.034504 · Cited by 18
A comparison of advanced transport models for the computation of the drain current in nanoscale nMOSFETs
Palestri, P., Alexander, C. L., Asenov, A., Aubry-Fortuna, V., Baccarani, G., Bournel, A., Braccioli, M., Cheng, B., Dollfus, P., Esposito, A., et al. (2009) · Solid-State Electronics · doi:10.1016/j.sse.2009.09.019 · Cited by 18
A review of the top of the barrier nanotransistor models for semiconductor nanomaterials
Chuan, M. W., Wong, K. L., Hamzah, A., Rusli, S., Alias, N. E., Lim, C. S., & Tan, M. L. P. (2020) · Superlattices and Microstructures · doi:10.1016/j.spmi.2020.106429 · Cited by 18
Quantum transport in a nanosize double-gate metal-oxide-semiconductor field-effect transistor
Croitoru, M. D., Gladilin, V. N., Fomin, V. M., Devreese, J. T., Magnus, W., Schoenmaker, W., & Sorée, B. (2004) · Journal of Applied Physics · doi:10.1063/1.1767619 · Cited by 18
Channel length scaling and the impact of metal gate work function on the performance of double gate-metal oxide semiconductor field-effect transistors
Rechem, D., Latreche, S., & Gontrand, C. (2009) · Pramana · doi:10.1007/s12043-009-0052-5 · Cited by 18
On the experimental determination of channel back-scattering in nanoMOSFETs
Zilli, M., Palestri, P., Esseni, D., & Selmi, L. (2007) · Technical digest - International Electron Devices Meeting/Technical digest · doi:10.1109/iedm.2007.4418875 · Cited by 18
Monte Carlo Modeling of Heat Generation in Electronic Nanostructures
Pop, E., Sinha, S., & Goodson, K. E. (2002) · ASME International Mechanical Engineering Congress and Exposition (IMECE) · doi:10.1115/imece2002-32124 · Cited by 17
Quantum transport in a nanosize silicon-on-insulator metal-oxide-semiconductor field-effect transistor
Croitoru, M. D., Gladilin, V. N., Fomin, V. M., Devreese, J. T., Magnus, W., Schoenmaker, W., & Sorée, B. (2003) · Journal of Applied Physics · doi:10.1063/1.1533108 · Cited by 17
Simulation of the Performance of Graphene FETs With a Semiclassical Model, Including Band-to-Band Tunneling
Paussa, A., Fiori, G., Palestri, P., Geromel, M., Esseni, D., Iannaccone, G., & Selmi, L. (2014) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2014.2307914 · Cited by 16
Simplified model for ballistic current–voltage characteristic in cylindrical nanowires
Kurniawan, O., Ng, M., Koh, W. S., Leong, Z. Y., & Li, E. (2010) · Microelectronics Journal · doi:10.1016/j.mejo.2010.01.013 · Cited by 16
Compact Modeling to Device- and Circuit-Level Evaluation of Flexible TMD Field-Effect Transistors
Gholipour, M., Chen, Y., & Chen, D. (2017) · IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems · doi:10.1109/tcad.2017.2729460 · Cited by 16
Electronic properties and carrier transport properties of low-dimensional aluminium doped silicene nanostructure
Chuan, M. W., Wong, K. L., Hamzah, A., Rusli, S., Alias, N. E., Lim, C. S., & Tan, M. L. P. (2019) · Physica E Low-dimensional Systems and Nanostructures · doi:10.1016/j.physe.2019.113731 · Cited by 16
Electronic characterisation of atomistic modelling based electrically doped nano bio p‐i‐n FET
Dey, D., Roy, P., & De, D. (2016) · IET Computers & Digital Techniques · doi:10.1049/iet-cdt.2015.0156 · Cited by 15
Quasi-Ballistic Transport Model for Graphene Field-Effect Transistor
Hu, G., Hu, S., Liu, R., Wang, L., Zhou, X., & Tang, T.-A. (2013) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2013.2264094 · Cited by 15
On the drain current saturation in short channel MOSFETs
Benfdila, A., & Balestra, F. (2005) · Microelectronics Journal · doi:10.1016/j.mejo.2005.09.020 · Cited by 15
Nanoscale SOI MOSFETs: a comparison of two options
Walls, T. J., Sverdlov, V. A., & Likharev, K. K. (2004) · Solid-State Electronics · doi:10.1016/j.sse.2003.12.024 · Cited by 15
A Monte-Carlo study of the role of scattering in deca-nanometer MOSFETs
Palestri, P., Esseni, D., Eminente, S., Fiegna, C., SANGIORGI, E., & Selmi, L. (2005) · Technical digest - International Electron Devices Meeting/Technical digest · doi:10.1109/iedm.2004.1419234 · Cited by 15
Analytical model for quantization on strained and unstrained bulk nMOSFET and its impact on quasi-ballistic current
Ferrier, M., Clerc, R., Ghibaudo, G., Bœuf, F., & Skotnicki, T. (2005) · Solid-State Electronics · doi:10.1016/j.sse.2005.10.044 · Cited by 14
Scaling of TG-FinFETs: 3-D Monte Carlo Simulations in the Ballistic and Quasi-Ballistic Regimes
Elthakeb, A. T., Abdelhamid, H., & Ismail, Y. (2015) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2015.2420580 · Cited by 14
Single Source Heterojunction Metal–Oxide–Semiconductor Transistors for Quasi-Ballistic Devices: Optimization of Source Heterostructures and Electron Velocity Characteristics at Low Temperature
Mizuno, T., Moriyama, Y., Tezuka, T., Sugiyama, N., & Takagi, S. (2011) · Japanese Journal of Applied Physics · doi:10.1143/jjap.50.010107 · Cited by 14
A Unified Carrier-Transport Model for the Nanoscale Surrounding-Gate MOSFET Comprising Quantum–Mechanical Effects
Hu, G., Gu, J., Hu, S., Ding, Y. L., Liu, R., & Tang, T.-A. (2011) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2011.2136343 · Cited by 14
A Comprehensive Theoretical Analysis of Hole Ballistic Velocity in Si, SiGe, and Ge: Effect of Uniaxial Strain, Crystallographic Orientation, Body Thickness, and Gate Architecture
Teherani, J. T. (2017) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2017.2708691 · Cited by 14
Impact of ambient temperature on the self-heating effects in FinFETs
Yin, L., Du, G., & Liu, X. (2018) · Journal of Semiconductors · doi:10.1088/1674-4926/39/9/094011 · Cited by 14
Strain Engineering for 3.5-nm Node in Stacked-Nanoplate FET
Kim, H., Son, D., Myeong, I., Ryu, D., Park, J., Kang, M., Jeon, J., & Shin, H. (2019) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2019.2917503 · Cited by 14
Physics-Based Analytical Modeling of Quasi-Ballistic Transport in Double-Gate MOSFETs: From Device to Circuit Operation
Martinie, S., Munteanu, D., Carval, G. L., & Autran, J. (2009) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2009.2030540 · Cited by 14
Kinetic study of velocity distributions in nanoscale semiconductor devices under room-temperature operation
Sano, N. (2004) · Applied Physics Letters · doi:10.1063/1.1812812 · Cited by 14
Semi-classical noise investigation for sub-40nm metal-oxide-semiconductor field-effect transistors
Spathis, C., Birbas, A. N., & Georgakopoulou, K. (2015) · AIP Advances · doi:10.1063/1.4928424 · Cited by 13
Influence of Elastic and Inelastic Electron–Phonon Interaction on Quantum Transport in Multigate Silicon Nanowire MOSFETs
Akhavan, N. D., Afzalian, A., Kranti, A., Ferain, I. P., Lee, C., Yan, R., Razavi, P., Yu, R., & Colinge, J. P. (2011) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2011.2107521 · Cited by 13
Electron aspirator using electron–electron scattering in nanoscale silicon
Firdaus, H., Watanabe, T., Hori, M., Moraru, D., Takahashi, Y., Fujiwara, A., & Ono, Y. (2018) · Nature Communications · doi:10.1038/s41467-018-07278-8 · Cited by 13
Characterization and Metrology for Nanoelectronics
Diebold, A. C., Seiler, D. G., Diebold, A. C., McDonald, R., Garner, C. M., Herr, D., Khosla, R. P., & Secula, E. M. (2007) · AIP conference proceedings · doi:10.1063/1.2799372 · Cited by 13
FinFET to nanowire transition at 5nm design rules
Smith, L., Choi, M., Frey, M., Moroz, V., Ziegler, A., & Luisier, M. (2015) · International Conference on Simulation of Semiconductor Processes and Devices · doi:10.1109/sispad.2015.7292307 · Cited by 13

Authors: Lundstrom, M., & Ren, Z.
Affiliations: Purdue University West Lafayette (US)
ORCID: Lundstrom, M.
Ren, Z.
Venue: IEEE Transactions on Electron Devices
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Published: 2002
Volume: 49
Issue: 1
Pages: 133-141
ISSN: 0018-9383 (ISSN-L)
DOI: 10.1109/16.974760
OpenAlex: W2109617856
Cited by: 554
References: 29
Citations by year: 2026: 8 · 2025: 5 · 2024: 8 · 2023: 8 · 2022: 12 · 2021: 17 · 2020: 16 · 2019: 12 · 2018: 18 · 2017: 22 · 2016: 18 · 2015: 29 · 2014: 19 · 2013: 29 · 2012: 24
FWCI: 36.75
Type: journal article
Language: en
Open access: closed
Licence: ieeexplore.ieee.org/Xplorehelp/downloads/license-information/IEEE.html (vor)
Locations: IEEE Transactions on Electron Devices (publishedVersion)
Topics: Physical Sciences › Engineering › Electrical and Electronic Engineering › Advancements in Semiconductor Devices and Circuit Design
Physical Sciences › Engineering › Electrical and Electronic Engineering › Semiconductor materials and devices
Physical Sciences › Physics and Astronomy › Condensed Matter Physics › Quantum and electron transport phenomena
Keywords: nanoscale MOSFETs, carrier transport, charge control, velocity saturation, thermal injection, scattering model, device physics

About these checks

Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.

Statistics and arithmetic are recomputed, not judged.

Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.

What counts as a claim ›How we measure confidence ›How we check this ›

Are you an author, or do you see a problem with this page? Request a review

Essential physics of carrier transport in nanoscale MOSFETs

Abstract

Overview

Integrity signals

Verification

Claims the paper makes

Claims other papers make about this one

Citations

Cites

Cited by

Related

Metadata

Record

About these checks