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Novel large area joining technique for improved power device performance
Abstract
Conventional techniques of joining silicon wafers to suitable substrates do not satisfy the demands of future power devices. Therefore, a low-temperature joining technique based on the principle of diffusion welding has been developed. The surfaces to be joined have to be metalized with Ag or Au. The molybdenum substrate is coated with a thin layer of silver flakes. Thereafter, the parts to be joined are sintered together at about 240 degrees C and a pressure of approximately 40 N/mm/sup 2/ for a few minutes. The joining technique does not affect the silicon wafer, and accordingly, is compatible with conventional power device and IC fabrication techniques. Both sides of the wafer can be joined with substrates even if IC structures are present. This possibility allows an increased surge current. Numerical calculations for different wafer thicknesses have been performed and compared with test devices. The technical usefulness has been proved by additional tests such as thermal cycling.>
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Cited by
High-Temperature Operation of SiC Power Devices by Low-Temperature Sintered Silver Die-Attachment
Bai, J. G., Yin, J., Zhang, Z., Lu, G.-Q., & van Wyk, J. D. (2007) · IEEE Transactions on Advanced Packaging · doi:10.1109/tadvp.2007.898628 · Cited by 177
Reliability assessment of sintered nano-silver die attachment for power semiconductors
Knoerr, M., Kraft, S., & Schletz, A. (2010) · 2010 12th Electronics Packaging Technology Conference · doi:10.1109/eptc.2010.5702605 · Cited by 184
Metadata
- Authors
- Schwarzbauer, H., & Kuhnert, R.
- Venue
- IEEE Transactions on Industry Applications
- Published
- 1991
- Volume
- 27
- Issue
- 1
- Pages
- 93-95
- ISSN
- 0093-9994 (ISSN-L)
- OpenAlex
- W2134357750
- Cited by
- 197
- References
- 0
- FWCI
- 2.31
- Type
- journal article
- Language
- en
- Open access
- closed
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- CoChat. (2026). Citation check: Novel large area joining technique for improved power device performance. https://app.cochat.ai/papers/10.1109/28.67536
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- Schwarzbauer, H., & Kuhnert, R. (1991). Novel large area joining technique for improved power device performance. IEEE Transactions on Industry Applications. https://doi.org/10.1109/28.67536
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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
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