The DOI matches its Crossref record; 18 of the 18 references it cites were found in a registry or an index.
High-Temperature Operation of SiC Power Devices by Low-Temperature Sintered Silver Die-Attachment
Abstract
In this paper, we present the realization of high-temperature operation of SiC power semiconductor devices by low-temperature sintering of nanoscale silver paste as a novel die-attachment solution. The silver paste was prepared by mixing nanoscale silver particles with carefully selected organic components which can burn out within the low-temperature firing range. SiC Schottky diodes were placed onto stencil-printed layers of the nanoscale silver paste on Au or Ag metallized direct bonded copper (DBC) substrates for the die-attachment. After heating up to 300degC and dwell for 40 min in air to burn out the organic components in the paste and to sinter the nanoscale silver, the paste consolidated into a strong and uniform die-attach bonding layer with purity >99% and density >80%. Then the die-attached SiC devices were cooled down to room temperature and their top terminals were wire-bonded to achieve the high-temperature power packages. Then the power packages were heated up from room temperature to 300degC for high-temperature operation and characterization. Results of the measurement demonstrate the low-temperature silver sintering as an effective die-attach method for high-temperature electronic packaging. An advanced packaging structure for future SiC transistors with several potential advantages was also proposed based on the low-temperature sintering technology.
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Silver-sintered joints provide excellent electrical and thermal conductivity and high-temperature stability but face electromigration and cost challenges.
“Silver-sintered joints provide excellent electrical/thermal conductivity and high-temperature stability but face electromigration (EM) and cost challenges [2,30-35].”
From Thermal Management of Wide-Bandgap Power Semiconductors: Strategies and Challenges in SiC and GaN Power Devices (2025) · cites this paper as [33]
Citations
Cites
Thermal behavior of silver nanoparticles for low-temperature interconnect applications
Moon, K., Dong, H., Marić, R., et al. (2005) · Journal of Electronic Materials · doi:10.1007/s11664-005-0229-8 · Cited by 385
Bai, J. G., Zhang, Z. Z., Calata, J. N., et al. (2006) · IEEE Transactions on Components and Packaging Technologies · doi:10.1109/tcapt.2005.853167 · Cited by 375
Self-citationBai, J. G., & Lu, G. (2006) · IEEE Transactions on Device and Materials Reliability · doi:10.1109/tdmr.2006.882196 · Cited by 214
Self-citationNovel large area joining technique for improved power device performance
Schwarzbauer, H., & Kuhnert, R. (1991) · IEEE Transactions on Industry Applications · doi:10.1109/28.67536 · Cited by 199
6H-silicon carbide devices and applications
Palmour, J. W., Edmond, J. A., Kong, H., & Carter, C. H., Jr. (1993) · Physica B Condensed Matter · doi:10.1016/0921-4526(93)90278-e · Cited by 188
Silicon-carbide (SiC) semiconductor power electronics for extreme high-temperature environments
Homberger, J., Lostetter, A. B., Olejniczak, K. J., et al. (2004) · Proceedings - IEEE Aerospace Conference · doi:10.1109/aero.2004.1368048 · Cited by 170
Silver-indium joints produced at low temperature for high temperature devices
Chuang, R. W., & Lee, C. C. (2002) · IEEE Transactions on Components and Packaging Technologies · doi:10.1109/tcapt.2002.801113 · Cited by 124
SiC devices for advanced power and high-temperature applications
Wondrak, W., Held, R., Niemann, E., et al. (2001) · IEEE Transactions on Industrial Electronics · doi:10.1109/41.915409 · Cited by 116
Low-Temperature Sintering of Nanoscale Silver Paste for Semiconductor Device Interconnection
Bai, G. (2005) · VTechWorks (Virginia Tech) · Cited by 92
Low temperature joining technology - a high reliability alternative to solder contacts
Scheuermann, U., & Wiedl, P. (1997) · OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information) · Cited by 46
High temperature SiC trench gate p-IGBTs
Singh, R., Ryu, S., Capell, D. C., et al. (2003) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2003.811388 · Cited by 42
Reduction of thermomechanical stress by applying a low temperature joining technique
Klaka, S., & Sittig, R. (2002) · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · doi:10.1109/ispsd.1994.583736 · Cited by 27
Thermomechanical analysis of gold-based SiC die-attach assembly
Meyyappan, K. N., McCluskey, P., & Chen, L.-Y. (2003) · IEEE Transactions on Device and Materials Reliability · doi:10.1109/tdmr.2003.821538 · Cited by 26
Silicon Carbide Die Attach Scheme for 500°C Operation
Chen, L.-Y., Hunter, G. W., & Neudeck, P. G. (2000) · MRS Proceedings · doi:10.1557/proc-622-t8.10.1 · Cited by 21
Measurements of the electrical mobility of silver over a hot tin oxide surface
Sears, W. M., & Love, D. A. (1993) · Physical review. B, Condensed matter · doi:10.1103/physrevb.47.12972 · Cited by 17
Bai, J. G., Calata, J. N., & Lu, G. (2005) · Journal of Electronic Packaging · doi:10.1115/1.2229218 · Cited by 15
Self-citationHigh-temperature storage and thermal cycling studies of thick film and wirewound resistors
Naefe, J. E., Johnson, W. R., & Grzybowski, R. (2002) · IEEE Transactions on Components and Packaging Technologies · doi:10.1109/6144.991174 · Cited by 11
High temperature (450°C) reliable NMISFET's on p-type 6H-SiC
Wang, X. W., Zhu, W., Guo, X., et al. (2003) · Technical digest - International Electron Devices Meeting/Technical digest · doi:10.1109/iedm.1999.823881 · Cited by 2
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Research works printed but not linked: 3
- 2002, CREE datasheet CPWR-0600S010 Silicon Carbide Schottky Diodes
- agarwal, 2005, 600 v, 1- 40 a, schottky diodes in sic and their applications, CREE Power Appl Notes
- 0, International Rectifier Inc
Cited by
Sorted by citations
A Review of SiC Power Module Packaging Technologies: Challenges, Advances, and Emerging Issues
Lee, H., Smet, V., & Tummala, R. (2020) · IEEE Journal of Emerging and Selected Topics in Power Electronics · doi:10.1109/jestpe.2019.2951801 · Cited by 526
A Review of High-Speed GaN Power Modules: State of the Art, Challenges, and Solutions
Emon, A. I., Mustafeez-ul-Hassan, Mirza, A. B., Kaplun, J., Vala, S. S., & Luo, F. (2023) · IEEE Journal of Emerging and Selected Topics in Power Electronics · doi:10.1109/jestpe.2022.3232265 · Cited by 151
Review of Die-Attach Materials for SiC High-Temperature Packaging
Hou, F., Sun, Z., Su, M., Fan, J., You, X., Li, J., Wang, Q., Cao, L., & Zhang, G. (2024) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2024.3417529 · Cited by 52
Han, G., Kim, J., Park, S., & Bae, W. (2025) · Electronics · doi:10.3390/electronics14214193 · Cited by 34
Metadata
- Authors
- Bai, J. G., Yin, J., Zhang, Z., Lu, G.-Q., & van Wyk, J. D.
- Affiliations
- University of Washington (US)
- Virginia Tech (US)
- Venue
- IEEE Transactions on Advanced Packaging
- Published
- 2007-08
- Volume
- 30
- Issue
- 3
- Pages
- 506-510
- ISSN
- 1521-3323 (ISSN-L)
- OpenAlex
- W2100822548
- Cited by
- 177
- References
- 18
- Citations by year
- 2026: 4 · 2025: 8 · 2024: 6 · 2023: 5 · 2022: 8 · 2021: 6 · 2020: 2 · 2019: 11 · 2018: 14 · 2017: 12 · 2016: 12 · 2015: 19 · 2014: 10 · 2013: 13 · 2012: 18
- FWCI
- 5.99
- Type
- journal article
- Language
- en
- Open access
- closed
- Locations
- IEEE Transactions on Advanced Packaging (publishedVersion)
- Funders
- National Science Foundation
- Virginia Polytechnic Institute and State University
- Engineering Research Centers
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Electronic Packaging and Soldering Technologies
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Silicon Carbide Semiconductor Technologies
- Physical Sciences › Engineering › Electrical and Electronic Engineering › 3D IC and TSV technologies
- Keywords
- silicon carbide power devices, die attach, low-temperature sintering, silver paste, high-temperature operation, SiC Schottky diodes, direct bonded copper substrate, stencil printing, wire bonding, high-temperature packaging, power electronics packaging
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