III-V nitrides for electronic and optoelectronic applications

Abstract

Recent developments in III-V nitride thin-film materials for electronic and optoelectronic applications are reviewed. The problems that are limiting the development of these materials and devices made from them are discussed. The properties of cubic boron nitride, aluminum nitride, gallium nitride, AlN/GaN solid solutions and heterostructures, and indium nitride are discussed. It is pointed out that the lack of a suitable substrate, with the possible exception of SiC for AlN, is a problem of considerable magnitude. This is compounded by the presence of shallow donor bands in GaN and InN which are apparently caused by N vacancies. The question of whether these vacancies occur (if they do) as a result of intrinsic or extrinsic (as a result of deposition) nonstoichiometry has not been answered. However, the recent advances in the fabrication of p-type GaN and a p-n junction light emitting diode via the electron beam stimulation of the Mg dopant are very encouraging and may considerably advance the technology of this material. This would indicate that self-compensation effects, similar to those observed in ZnO and ZnSe, may not be present in the III-V nitrides, since cubic BN (cBN) AlN and now GaN have been reportedly doped both n- and p-type.>