The DOI matches its Crossref record; 12 of the 12 references it cites were found in a registry or an index.
Epitaxial growth and characterization of zinc-blende gallium nitride on (001) silicon
Abstract
GaN films have been epitaxially grown onto (001) Si by electron cyclotron resonance microwave-plasma-assisted molecular-beam epitaxy, using a two-step growth process, in which a GaN buffer is grown at relatively low temperatures and the rest of the film is grown at higher temperatures. This method of film growth was shown to lead to good single-crystalline β-GaN and to promote lateral growth resulting in smooth surface morphology. The full width at half-maximum of the x-ray rocking curve in the best case was found to be 60 min. Optical-absorption measurements indicate that the band gap of β-GaN is 3.2 eV and the index of the refraction below the absorption edge is 2.5. Conductivity measurements indicate that the films may have a carrier concentration below 1017 cm−3.
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Cites
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Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
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THE PREPARATION AND PROPERTIES OF VAPOR-DEPOSITED SINGLE-CRYSTAL-LINE GaN
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III-V nitrides for electronic and optoelectronic applications
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Cited by
Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologies
Morkoç, H., Strite, S., Gao, G. B., Lin, M. E., Sverdlov, B., & Burns, M. (1994) · Journal of Applied Physics · doi:10.1063/1.358463 · Cited by 2,733
Fabrication and performance of GaN electronic devices
Pearton, S. J., Ren, F., Zhang, A. P., & Lee, K. P. (2000) · Materials Science and Engineering: R: Reports · doi:10.1016/s0927-796x(00)00028-0 · Cited by 507
Progress and prospects of group-III nitride semiconductors
Mohammad, S. N., & Morkoç, H. (1996) · Progress in Quantum Electronics · doi:10.1016/s0079-6727(96)00002-x · Cited by 502
Consistent set of band parameters for the group-III nitrides AlN, GaN, and InN
Rinke, P., Winkelnkemper, M., Qteish, A., Bimberg, D., Neugebauer, J., & Scheffler, M. (2008) · Physical Review B · doi:10.1103/physrevb.77.075202 · Cited by 411
Metadata
- Authors
- Lei, T., Moustakas, T. D., Graham, R. J., He, Y., & Berkowitz, S. J.
- Venue
- Journal of Applied Physics
- Publisher
- AIP Publishing
- Published
- 1992-05-15
- Volume
- 71
- Issue
- 10
- Pages
- 4933-4943
- ISSN
- 0021-8979 (ISSN-L)
- 1089-7550
- OpenAlex
- W1990715982
- Cited by
- 358
- References
- 12
- FWCI
- 12.47
- Type
- journal article
- Language
- en
- Open access
- closed
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- Lei, T., Moustakas, T. D., Graham, R. J., He, Y., & Berkowitz, S. J. (1992). Epitaxial growth and characterization of zinc-blende gallium nitride on (001) silicon. Journal of Applied Physics. https://doi.org/10.1063/1.350642
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Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.
