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Scaling theory for cylindrical, fully-depleted, surrounding-gate MOSFET's
Abstract
We present a scaling theory for fully-depleted, cylindrical MOSFET's. This theory was derived from the cylindrical form of Poisson's equation by assuming a parabolic potential in the radial direction. Numerical device simulation data for subthreshold slope and DIBL were compared to the model to validate the formula. By employing the scaling theory a comparison with double-gate (DG) MOSFET's was carried out illustrating an improvement of up to 40% in the minimum effective channel length for the cylindrical device.
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Cited by
Wong, H.-S. P., Frank, D. J., Solomon, P. M., Wann, C. H. J., & Welser, J. J. (1999) · Proceedings of the IEEE · doi:10.1109/5.752515 · Cited by 444
Oh, S.-H., Monroe, D., & Hergenrother, J. M. (2000) · IEEE Electron Device Letters · doi:10.1109/55.863106 · Cited by 353
Kumar, B., Kaushik, B. K., & Negi, Y. S. (2014) · Polymer Reviews · doi:10.1080/15583724.2013.848455 · Cited by 349
Device Exploration of NanoSheet Transistors for Sub-7-nm Technology Node
Jang, D., Yakimets, D., Eneman, G., Schuddinck, P., Bardon, M. G., Raghavan, P., Spessot, A., Verkest, D., & Mocuta, A. (2017) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2017.2695455 · Cited by 292
Kranti, A., Haldar, S., & Gupta, R. S. (2001) · Microelectronic Engineering · doi:10.1016/s0167-9317(00)00419-6 · Cited by 90
Metadata
- Authors
- Auth, C. P., & Plummer, J. D.
- Venue
- IEEE Electron Device Letters
- Published
- 1997-02
- Volume
- 18
- Issue
- 2
- Pages
- 74-76
- ISSN
- 0741-3106 (ISSN-L)
- 1558-0563
- OpenAlex
- W2120782742
- Cited by
- 565
- References
- 0
- FWCI
- 6.53
- Type
- journal article
- Language
- en
- Open access
- closed
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- Auth, C. P., & Plummer, J. D. (1997). Scaling theory for cylindrical, fully-depleted, surrounding-gate MOSFET's. IEEE Electron Device Letters. https://doi.org/10.1109/55.553049
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