The DOI matches its Crossref record; 6 of the 6 references it cites were found in a registry or an index.
Analytic description of short-channel effects in fully-depleted double-gate and cylindrical, surrounding-gate MOSFETs
Abstract
Short-channel effects in fully-depleted double-gate (DG) and cylindrical, surrounding-gate (Cyl) MOSFETs are governed by the electrostatic potential as confined by the gates, and thus by the device dimensions. The simple but powerful evanescent-mode analysis shows that the length /spl lambda/, over which the source and drain perturb the channel potential, is 1//spl pi/ of the effective device thickness in the double-gate case, and 1/4.810 of the effective diameter in the cylindrical case, in excellent agreement with PADRE device simulations. Thus for equivalent silicon and gate oxide thicknesses, evanescent-mode analysis indicates that Cyl-MOSFETs can be scaled to 35% shorter channel lengths than DG-MOSFETs.
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Cites
(2020) · Electromagnetic Processes · doi:10.2307/j.ctv131bv37.5 · Cited by 21,966
Scaling the Si MOSFET: from bulk to SOI to bulk
Yan, R.-H., Ourmazd, A., & Lee, K. F. (1992) · IEEE Transactions on Electron Devices · doi:10.1109/16.141237 · Cited by 910
Scaling theory for cylindrical, fully-depleted, surrounding-gate MOSFET's
Auth, C. P., & Plummer, J. D. (1997) · IEEE Electron Device Letters · doi:10.1109/55.553049 · Cited by 565
Zamastil, J. (2023) · SpringerBriefs in physics · doi:10.1007/978-3-031-37373-2_2 · Cited by 563
Impact of surrounding gate transistor (SGT) for ultra-high-density LSI's
Takato, H., Sunouchi, K., Okabe, N., Nitayama, A., Hieda, K., HORIGUCHI, F., & MASUOKA, F. (1991) · IEEE Transactions on Electron Devices · doi:10.1109/16.75168 · Cited by 145
Two-dimensional analytic modeling of very thin SOI MOSFETs
Woo, J. C. S., Terrill, K. W., & Vasudev, P. K. (1990) · IEEE Transactions on Electron Devices · doi:10.1109/16.57162 · Cited by 73
Cited by
Low-Voltage Tunnel Transistors for Beyond CMOS Logic
Seabaugh, A. C., & Zhang, Q. (2010) · Proceedings of the IEEE · doi:10.1109/jproc.2010.2070470 · Cited by 1,635
Frontiers of silicon-on-insulator
Celler, G. K., & Cristoloveanu, S. (2003) · Journal of Applied Physics · doi:10.1063/1.1558223 · Cited by 699
Gautam, R., Saxena, M., Gupta, R. S., & Gupta, M. (2013) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2013.2256912 · Cited by 55
Metadata
- Authors
- Oh, S.-H., Monroe, D., & Hergenrother, J. M.
- Venue
- IEEE Electron Device Letters
- Published
- 2000-09
- Volume
- 21
- Issue
- 9
- Pages
- 445-447
- ISSN
- 0741-3106 (ISSN-L)
- 1558-0563
- OpenAlex
- W2126174276
- Cited by
- 353
- References
- 6
- FWCI
- 4.33
- Type
- journal article
- Language
- en
- Open access
- closed
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- Oh, S.-H., Monroe, D., & Hergenrother, J. M. (2000). Analytic description of short-channel effects in fully-depleted double-gate and cylindrical, surrounding-gate MOSFETs. IEEE Electron Device Letters. https://doi.org/10.1109/55.863106
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