The DOI matches its Crossref record; 15 of the 15 references it cites were found in a registry or an index.
Pulsed Overcurrent Capability of Power Semiconductor Devices in Solid-State Circuit Breakers: SiC MOSFET vs. Si IGBT
Abstract
Solid-state circuit breakers (SSCBs) determine a unique pulsed overcurrent operating profile for power semi-conductor devices. In SSCBs, the device pulsed overcurrent capability serves as one of the most critical parameters, yet it remains unclear. This work proposed an electrical-thermal modeling framework to explore the full potential of device overcurrent capability, considering device parasitic, circuit stray components, and multilayer chip structure. Peak temperature at local hotspot is used as the criterion for device thermal runaway. Similarly-rated SiC MOSFET and Si IGBT are compared to demonstrate the difference between device technologies with respect to circuit behavior, power loss and temperature limit. Both devices are able to turn-off much higher current than the data-sheet value, and SiC MOSFET presents a higher overcurrent capability than Si IGBT. In addition, an early saturation in SiC MOSFET limits the actual pulsed current level. These findings provide critical understandings for device margin and design space in SSCB applications.
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Extended defects such as micropipes, basal plane dislocations, and stacking faults increase leakage current and reduce breakdown voltage in SiC.
“Extended defects such as micropipes, basal plane dislocations (BPDs), and stacking faults increase leakage current and reduce breakdown voltage [60-62], while deep-level point defects (such as the Z1/2 and EH6/7 centers) act as carrier recombination centers that shorten carrier lifetime [2].”
From Thermal Management of Wide-Bandgap Power Semiconductors: Strategies and Challenges in SiC and GaN Power Devices (2025) · cites this paper as [62]
Citations
Cites
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A Review of Solid-State Circuit Breakers
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Analysis and Experiments for IGBT, IEGT, and IGCT in Hybrid DC Circuit Breaker
Chen, Z., Yu, Z., Zhang, X., et al. (2017) · IEEE Transactions on Industrial Electronics · doi:10.1109/tie.2017.2764863 · Cited by 190
Accurate Temperature Estimation of SiC Power mosfets Under Extreme Operating Conditions
Tsibizov, A., Kovacevic-Badstuebner, I., Kakarla, B., & Großner, U. (2019) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2019.2917221 · Cited by 135
Gate Failure Physics of SiC MOSFETs Under Short-Circuit Stress
Liu, J., Zhang, G., Wang, B., Li, W., & Wang, J. (2019) · IEEE Electron Device Letters · doi:10.1109/led.2019.2953235 · Cited by 115
Self-citationEstimation and Measurement of Junction Temperatures in a Three-Level Voltage Source Converter
Brckner, T., & Bernet, S. (2007) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2006.886651 · Cited by 111
Short circuit capability and high temperature channel mobility of SiC MOSFETs
Sun, J., Xu, H., Wu, X., Yang, S., Guo, Q. W., & Sheng, K. (2017) · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · doi:10.23919/ispsd.2017.7988988 · Cited by 61
Voltage Overshoot Suppression for SiC MOSFET-Based DC Solid-State Circuit Breaker
Liao, X., Li, H., Yao, R., Huang, Z., & Wang, K. (2019) · IEEE Transactions on Components Packaging and Manufacturing Technology · doi:10.1109/tcpmt.2019.2899340 · Cited by 59
Investigation on single pulse avalanche failure of SiC MOSFET and Si IGBT
Ren, N., Hu, H., Lyu, X., Wu, J., Xu, H., Li, R., Zuo, Z., Wang, K., & Sheng, K. (2018) · Solid-State Electronics · doi:10.1016/j.sse.2018.11.010 · Cited by 53
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A simplified IGBT behavioral model with a tail current module for switching losses estimation
Li, G., Wen, H., Yao, C., et al. (2017) · IEEE ... Workshop on Control and Modeling for Power Electronics · doi:10.1109/compel.2017.8013354 · Cited by 19
Simulation studies for avalanche induced short-circuit current crowding of MOSFET-Mode IGBT
Tanaka, M., & Nakagawa, A. (2015) · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · doi:10.1109/ispsd.2015.7123404 · Cited by 17
Multiple failure mode identification of SiC planar MOSFETs in short-circuit operation
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Self-citationIGBT Failure mechanism and boundary analysis under large current and high temperature turn-off
Ma, X., Huang, Y., & Luo, Y. (2021) · Journal of Physics Conference Series · doi:10.1088/1742-6596/1754/1/012036 · Cited by 4
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Han, G., Kim, J., Park, S., & Bae, W. (2025) · Electronics · doi:10.3390/electronics14214193 · Cited by 34
“Extended defects such as micropipes, basal plane dislocations (BPDs), and stacking faults increase leakage current and reduce breakdown voltage [60–62], while deep-level point defects (such as the Z1/2 and EH6/7 centers) act as carrier recombination centers that shorten carrier lifetime [2].”
Metadata
- Authors
- Yang, X., Liu, J., Wang, B., & Zhang, G.
- Affiliations
- State Key Laboratory of Electrical Insulation and Power Equipment (CN)
- Venue
- 2022 IEEE Applied Power Electronics Conference and Exposition (APEC)
- Publisher
- IEEE
- Published
- 2022-03-20
- Pages
- 966-973
- ISSN
- 1048-2334 (ISSN-L)
- OpenAlex
- W4280556522
- Cited by
- 18
- References
- 15
- Citations by year
- 2026: 1 · 2025: 6 · 2024: 9 · 2023: 1 · 2022: 1
- FWCI
- 6.88
- Type
- conference paper
- Language
- en
- Open access
- closed
- Locations
- Conference proceedings/Conference proceedings - IEEE Applied Power Electronics Conference and Exposition (publishedVersion)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Silicon Carbide Semiconductor Technologies
- Physical Sciences › Engineering › Electrical and Electronic Engineering › HVDC Systems and Fault Protection
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Multilevel Inverters and Converters
- Keywords
- solid-state circuit breaker, SiC MOSFET, Si IGBT, power semiconductor devices, thermal runaway, device parasitics, power losses, turn-off current
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