The DOI matches its Crossref record; 1 of the 1 references it cites were found in a registry or an index.
Current sharing of IGBT modules in parallel with thermal imbalance
Abstract
For large current, switching devices such as MOSFET and IGBT, often have to be connected in parallel. Due to this reason, derating and preselection of the switching devices become necessary to develop high-power converters. The current imbalance can be produced by stray inductances, device characteristic difference or asymmetric circuit. Moreover, thermal imbalance is another important reason for current balancing. The static and transient characteristics of an IGBT vary sensitively with its junction temperature. This paper focuses on the current sharing of IGBTs in parallel with thermal imbalance. In this paper, an active gate control method which can achieve current balancing of the IGBTs in parallel with thermal imbalance, is explained and verified by experiments. This method can be applied to an actual 160kW/380V power electronics converter prototype for improving the utilization of the switching devices and enhancing system reliability.
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“The device current slope can be controlled via dynamic gate-emitter voltage control of the corresponding device [51] and dynamic current balancing can be realized.”
From Paralleling of IGBT Power Semiconductor Devices and Reliability Issues (2023) · cites this paper as [51]
Citations
Cites
Azar, R., Udrea, R., Ng, W. T., Dawson, F., Findlay, W., & Waind, P. (2008) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2007.909182 · Cited by 40
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Cited by
Wu, R., Smirnova, L., Wang, H., Iannuzzo, F., & Blaabjerg, F. (2015) · 2015 9th International Conference on Power Electronics and ECCE Asia (ICPE-ECCE Asia) · doi:10.1109/icpe.2015.7167881 · Cited by 47
Peng, C., Li, X., Fan, J., Zhao, Z., Tang, X., & Cui, X. (2022) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2022.3164544 · Cited by 36
Self-citationParalleling of IGBT Power Semiconductor Devices and Reliability Issues
Tripathi, R. N., & Omura, I. (2023) · Electronics · doi:10.3390/electronics12183826 · Cited by 14
Dynamic Paralleling Behaviors of High Power Trench and Fieldstop IGBTs
Wu, Y., Sun, Y., & Lin, Y. (2014) · Journal of Power Electronics · doi:10.6113/jpe.2014.14.4.788 · Cited by 5
Metadata
- Authors
- Wang, X., Zhao, Z., & Yuan, L.
- Venue
- 2010 IEEE Energy Conversion Congress and Exposition
- Publisher
- IEEE
- Published
- 2010-09
- Pages
- 2101-2108
- Cited by
- 26
- References
- 1
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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.
