Cited by 11Silicon Carbide Semiconductor TechnologiesElectronic Packaging and Soldering TechnologiesElectrical and Thermal Properties of Materials

The DOI matches its Crossref record; 7 of the 7 references it cites were found in a registry or an index.

Reliability assessment of SiC power module stack based on thermo-structural analysis

Sokolov, Alexey, Liu, Chunlei, Mohn, Fabian·2018·2018 19th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)

Abstract

Power semiconductor modules for power electronics converters are required to withstand significant temperature cycles in operation. Due to the availability of novel wide-bandgap semiconductors such as SiC, operation temperatures and corresponding temperature cycles of the power modules are intended to be increased. This can lead to severe lifetime limitation by fatigue failure mechanism induced by the CTE (coefficient of thermal expansion) mismatch of the material layers in the module. In this study a 3D finite element model (FEM) of an advanced power module concept was developed. The main material stack consists of a ceramic substrate, an Ag sintered SiC MOSFET and a sintered top plate that serves as a bond buffer to allow for Cu wire bonding. Stress simulations are performed for several thermal load cycles starting with an analysis of the initia bonding process during manufacture, and following a temperature cycling mission profile during operation. Plastic strain energy densities in the critical regions of the bond interfaces are computed and its development upon consecutives cycles are followed-up in the time domain. Based on these investigations, it is possible to propose design improvements that are effective in reducing thermo-mechanical stresses, and to increase fatigue life.

Overview

Integrity signals

Registry

Crossref · 10.1109/eurosime.2018.8369879

Cites

7 of 7 references verified0 citation errors · 0 not checkable

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  • SiC has lower CTE compared to Al surface (4.3 ppm/°C vs. 22 ppm/°C), which translates to plastic deformation at high junction temperatures.

    “Also, SiC has lower CTE compared to Al surface (4.3 ppm/ ◦ C vs. 22 ppm/ ◦ C) which translates to plastic deformation at high junction temperatures [47], [48].”

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Metadata

Authors
Sokolov, A., Liu, C., & Mohn, F.
Affiliations
ABB (Switzerland) (CH)
Venue
2018 19th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)
Publisher
IEEE
Published
2018-04
Pages
1-4
OpenAlex
W2806440147
Cited by
11
References
7
Citations by year
2025: 1 · 2024: 1 · 2023: 2 · 2022: 1 · 2021: 2 · 2019: 3 · 2018: 1
FWCI
2.39
Type
conference paper
Language
en
Open access
closed
Locations
International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE) (publishedVersion)
Topics
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Silicon Carbide Semiconductor Technologies
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Electronic Packaging and Soldering Technologies
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Electrical and Thermal Properties of Materials
Keywords
SiC power modules, reliability analysis, thermomechanical fatigue, thermal expansion mismatch, ceramic substrates, bond interface, plastic strain energy density, thermal cycling, fatigue life, wide bandgap semiconductors, power converters

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