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Cited by 30

The DOI matches its Crossref record.

Investigation of parallel operation of IGBTs

Nelson, J.J., Venkataramanan, G., Beihoff, B.C.·2003·Conference Record of the 2002 IEEE Industry Applications Conference. 37th IAS Annual Meeting (Cat. No.02CH37344)
DOI 10.1109/ias.2002.1042811
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Abstract

Widespread application of IGBTs in the past decade has resulted in dramatic improvement in performance of power electronic converters, with simultaneous reduction in costs. In order to further reduce the cost of power electronics systems and improve their reliability it is imperative that techniques for standardized and integrated architectures be adopted, allowing them to be mass-customized for a larger class of applications. One of the key factors that allow broad application of a power switching devices rated at a lower power level across large power levels is ease of parallel operation. This paper is devoted to presenting the results from investigation of parallel operation of IGBT devices. Experimental and computer simulation results are presented.

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Research works printed but not linked: 21

  1. 0, Connecting IGBTs in Parallel (Fundamentals)
  2. 0, Using IGBT Modules
  3. 0, Application characterization of IGBTs
  4. wong, 1996, Current sharing for paralleled IGBT's using statistics method, IEEE Ind Applicat, 3, 1418
  5. 10.1109/28.126748 · DOI
  6. 10.1109/63.761687 · DOI
  7. nelson, 2002, Active gate control for parallel operation of IGBT devices, Proceedings Center for Power Electronics Systems Seminar, 471
  8. 10.1109/5.931471 · DOI
  9. 10.1109/PESC.1996.548751 · DOI · Paper page
  10. 10.1109/28.821809 · DOI
  11. 10.1109/63.892825 · DOI
  12. 10.1109/PESC.2000.880496 · DOI
  13. forsythe, 0, Paralleling of power MOSFETs for higher power output
  14. lai, 1995, Multilevel converters - A new breed of power converters, IEEE Ind Applicat, 3, 2348
  15. 10.1109/PCC.2002.998554 · DOI
  16. rogne, 1993, Paralleling of semiconductors including temperature feedback, using spreadsheet or simulation tool, to calculate current and temperature differences, European Power Electron Conf, 2, 149
  17. keller, 1993, are paralleled igbt modules or paralleled igbt inverters the better choice?, Power Electronics and Applications 1993 Fifth European Conference on, 5, 1
  18. kehl, 1999, An overview of cellular power design, standard cell power and PEBB, Center Power Electron Syst Seminar Virginia Tech, 74
  19. 10.1109/IWIPP.2000.885169 · DOI
  20. rahimo, 2001, Novel Soft-Punch-Through (SPT) 1700V IGBT sets benchmark on technology curve, Proc PCIM 01
  21. dewar, 2000, Soft Punch Through (SPT) - Setting new standards in 1200V IGBT, Proc PCIM 00

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Metadata

Authors
Nelson, J. J., Venkataramanan, G., & Beihoff, B. C.
Venue
Conference Record of the 2002 IEEE Industry Applications Conference. 37th IAS Annual Meeting (Cat. No.02CH37344)
Publisher
IEEE
Published
2003
Volume
4
Pages
2585-2591
DOI
10.1109/ias.2002.1042811
Cited by
30
References
0

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Bibliographic data: Semantic Scholar, OpenAlex, Crossref.

Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).

Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.