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Current status of the phase change memory and its future

Lai, S.·2004·IEEE International Electron Devices Meeting 2003

Abstract

With the increasing challenge of scaling floating gate nonvolatile memory technology to beyond 65 nm, alternative memory technologies are being investigated. Chalcogenide based phase change memory (R. Neale et al, Electronics, p56-60, 1970) is one of the alternative memory candidates. In this review, the physics and operation of phase change memory are first presented, followed by a discussion of the current status of development. Finally, the scaling capability of the technology is presented. The scaling projection shows that there is no physical limit to scaling down to the 22 nm node, with a number of technical challenges being identified.

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Metadata

Authors
Lai, S.
Venue
IEEE International Electron Devices Meeting 2003
Publisher
IEEE
Published
2004-03-22
Pages
10.1.1-10.1.4
ISSN
0163-1918 (ISSN-L)
OpenAlex
W2545348996
Cited by
352
References
0
FWCI
98.21
Type
conference paper
Language
en
Open access
closed

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CoChat. (2026). Citation check: Current status of the phase change memory and its future. https://app.cochat.ai/papers/10.1109/iedm.2003.1269271
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Lai, S. (2004). Current status of the phase change memory and its future. IEEE International Electron Devices Meeting 2003. https://doi.org/10.1109/iedm.2003.1269271

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